MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Darlington Complementary
Silicon Power Transistors
. . . designed for general purpose and low speed switching applications.
•
High DC Current Gain — hFE = 2500 (typ.) at IC = 4.0
•
Collector–Emitter Sustaining Voltage at 100 mAdc
VCEO(sus) = 80 Vdc (min.) — BDX33B, 34B
VCEO(sus) =
100 Vdc (min.) — BDX33C, 34C
•
Low Collector–Emitter Saturation Voltage
VCE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc — BDX33B, 33C/34B, 34C
•
Monolithic Construction with Build–In Base–Emitter Shunt resistors
•
TO–220AB Compact Package
BDX33B
BDX33C*
BDX34B
BDX34C*
*Motorola Preferred Device
NPN
PNP
MAXIMUM RATINGS
Rating
Symbol
VCEO
VCB
VEB
IC
IB
BDX33B
BDX34B
80
80
BDX33C
BDX34C
100
100
Unit
Vdc
Vdc
Vdc
Adc
Adc
DARLINGTON
10 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 – 100 VOLTS
70 WATTS
PD, POWER DISSIPATION (WATTS)
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Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
5.0
10
15
Collector Current — Continuous
Peak
Base Current
0.25
Total Device Dissipation
@ TC = 25
_
C
Derate above 25
_
C
PD
70
0.56
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
CASE 221A–06
TO–220AB
Symbol
R
θJC
Max
Unit
Thermal Resistance, Junction to Case
1.78
_
C/W
80
60
40
20
0
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
140
160
Figure 1. Power Derating
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 7
Motorola Bipolar Power Transistor Device Data
3–217
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BDX33B BDX33C BDX34B BDX34C
1 Pulse Test: Pulse Width
300
µs,
Duty Cycle
2 Pulse Test non repetitive: Pulse Width = 0.25 s.
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
ON CHARACTERISTICS
DC Current Gain1
(IC = 3.0 Adc, VCE = 3.0 Vdc)
OFF CHARACTERISTICS
3–218
Diode Forward Voltage
(IC = 8.0 Adc)
Base–Emitter On Voltage
(IC = 3.0 Adc, VCE = 3.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 6.0 mAdc)
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
Collector Cutoff Current
(VCB = rated VCBO, IE = 0)
Collector Cutoff Current
(VCE = 1/2 rated VCEO, IB = 0)
Collector–Emitter Sustaining Voltage1
(IC = 100 mAdc, IB = 0, VBE = 1.5 Vdc)
Collector–Emitter Sustaining Voltage1
(IC = 100 mAdc, IB = 0, RBE = 100)
Collector–Emitter Sustaining Voltage1
(IC = 100 mAdc, IB = 0)
v
Characteristic
v
2.0%.
TC = 25
_
C
TC = 100
_
C
TC = 25
_
C
TC = 100
_
C
BDX33B/BDX34B
BDX33C/BDX34C
BDX33B/BDX34B
BDX33C/BDX34C
BDX33B/BDX34B
BDX33C/BDX33C
BDX33B, 33C/34B, 34C
BDX33B, 33C/34B, 34C
BDX33B, 33C/34B, 34C
Motorola Bipolar Power Transistor Device Data
VCEO(sus)
VCER(sus)
VCEX(sus)
VCE(sat)
VBE(on)
Symbol
ICBO
ICEO
IEBO
hFE
VF
Min
80
100
80
100
80
100
750
—
—
—
—
—
—
—
—
Max
4.0
2.5
2.5
1.0
5.0
0.5
10
10
—
—
—
—
—
—
—
mAdc
mAdc
mAdc
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
—
BDX33B BDX33C BDX34B BDX34C
r(t) EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.01
0.05
0.02
t1
SINGLE PULSE
t2
SINGLE
PULSE
P(pk)
R
θJC
(t) = r(t) R
θJC
R
θJC
= 1.92°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC
(t)
50
100
200 300
500
1000
D = 0.5
0.2
DUTY CYCLE, D = t1/t2
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)
20
30
Figure 1. Thermal Response
20
10
IC, COLLECTOR CURRENT (AMP)
5.0
2.0
1.0
0.5
0.2
0.1
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
BDX34B
BDX34C
2.0 3.0
5.0 7.0
10
20 30
50
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
70 100
TC = 25°C
5.0 ms
1.0 ms
dc
500
µs
100
µs
IC, COLLECTOR CURRENT (AMP)
20
10
5.0
2.0
1.0
0.5
0.2
0.1
TC = 25°C
5.0 ms
1.0 ms
dc
500
µs
100
µs
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
BDX33B
BDX33C
2.0 3.0
5.0 7.0
10
20 30
50
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
70 100
0.05
0.02
1.0
0.05
0.02
1.0
Figure 2. Active–Region Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate. The data of Fig. 3 is based on
TJ(pk) = 150
_
C; TC is variable depending on conditions. Se-
cond breakdown pulse limits are valid for duty cycles to 10%
provided TJ(pk) = 150
_
C. TJ(pk) may be calculated from the
data in Fig. . At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
10,000
hFE, SMALL–SIGNAL CURRENT GAIN
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1.0
2.0
PNP
NPN
5.0
10
20
50 100
f, FREQUENCY (kHz)
200
500 1000
TJ = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc
C, CAPACITANCE (pF)
300
TJ = 25°C
200
100
70
50
PNP
NPN
0.2
Cib
Cob
30
0.1
0.5
1.0 2.0
5.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
50
100
Figure 3. Small–Signal Current Gain
Figure 4. Capacitance
Motorola Bipolar Power Transistor Device Data
3–219
BDX33B BDX33C BDX34B BDX34C
NPN
BDX33B, 33C
20,000
VCE = 4.0 V
10,000
hFE, DC CURRENT GAIN
5000
3000
2000
1000
– 55°C
500
300
200
TJ = 150°C
10,000
hFE, DC CURRENT GAIN
5000
3000
2000
1000
500
300
200
– 55°C
25°C
TJ = 150°C
20,000
VCE = 4.0 V
PNP
BDX34B, 34C
25°C
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
Figure 5. DC Current Gain
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
3.0
TJ = 25°C
2.6
IC = 2.0 A
2.2
4.0 A
6.0 A
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
3.0
TJ = 25°C
2.6
IC = 2.0 A
2.2
4.0 A
6.0 A
1.8
1.8
1.4
1.4
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IB, BASE CURRENT (mA)
20
30
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
IB, BASE CURRENT (mA)
10
20
30
Figure 6. Collector Saturation Region
3.0
TJ = 25°C
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.5
3.0
TJ = 25°C
2.5
2.0
VBE(sat) @ IC/IB = 250
VBE @ VCE = 4.0 V
VCE(sat) @ IC/IB = 250
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
2.0
1.5
1.5
VBE @ VCE = 4.0 V
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
1.0
1.0
0.5
0.5
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 7. “On” Voltages
3–220
Motorola Bipolar Power Transistor Device Data
CASE 221D
Isolated TO–220 Type
UL Recognized
File #E69369
1
2
3
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
Table 1. Plastic (Isolated TO–220 Type)
Device Type
ICCont
Amps
Max
1
2
VCEO(sus)
Volts
Min
250
400
700
1000
3
5
100
100
400
450
700
1000
1000
550
6
400
450
8
80
150
400
700
1200
700
1000
VCES
Volts
Min
hFE
Min/Max
30/150
14/34
14/34
@ IC
Amp
0.3
0.2
0.2
1
3
0.3
.005
0.3
0.5
0.5
0.5
2
3
5
1
1
4
4
3
1.5
8
Resistive Switching
ts
µs
Max
2 typ
2.75(3)
2.75(3)
0.6
1.5 typ
1.7(3)
4
1.7(3)
2.75(3)
2.5(3)
3.2(3)
0.5 typ
1 typ
3
2.5(3)
2.75(3)
—
0.5 typ
1.5 typ
2.75(3)
3
tf
µs
Max
0.17 typ
0.2(3)
0.175(3)
0.3
1.5 typ
0.15(3)
0.8
0.15(3)
0.2(3)
0.15(3)
0.15(3)
0.13 typ
0.15 typ
0.7
0.18(3)
0.18(3)
—
0.14 typ
1.5 typ
0.2(3)
0.7
3
8
@ IC
Amp
0.3
1
1
1
3
1
2.5
1
2
3
3
2
3
5
2
2
—
5
13 typ
12
14 typ
14 typ
4
30
4
14 typ
13 typ
2
40
20(1)
12
8
fT
MHz
Min
10
13 typ
13 typ
3
4(1)
12 typ
PD (Case)
Watts
@ 25°C
28
25
25
28
28
35
40
35
35
40
40
35
35
40
45
45
40
35
40
50
40
NPN
PNP
MJF47
BUL44F
MJF18002
MJF31C
MJF122
(2)
BUL45F
BUT11AF
MJF18004
MJF18204
BUL146F
MJF18006
MJF6107
MJF15030
MJF13007
BUL147F
MJF15031
MJF32C
MJF127
(2)
10 min
2000 min
14/34
10 min
14/34
18/35
14/34
14/34
30/90
40 min
5/30
14/34
16/34
450
10
60
80
100
450
12
400
1000
MJF18008
MJF3055
MJF44H11
MJF6388
(2)
MJF2955
MJF45H11
MJF6668
(2)
20/100
40/100
3k/20k
14/34
6/30
1000
700
MJF18009
MJF13009
(1)|h | @ 1 MHz
FE
(2)Darlington
(3)Switching tests performed w/special application simulator circuit. See data sheet for details.
Devices listed in bold, italic are Motorola preferred devices.
Motorola Bipolar Power Transistor Device Data
Selector Guide
2–3
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