Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA MINIATURE, HERMETIC SEALED, CERAMIC, CERSOT-23, LCC-3
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Central Semiconductor |
| 零件包装代码 | DLCC |
| 包装说明 | ULTRA MINIATURE, HERMETIC SEALED, CERAMIC, CERSOT-23, LCC-3 |
| 针数 | 3 |
| Reach Compliance Code | not_compliant |
| 基于收集器的最大容量 | 8 pF |
| 集电极-发射极最大电压 | 40 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 40 |
| JESD-30 代码 | R-CDSO-N3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度(摄氏度) | NOT SPECIFIED |
| 极性/信道类型 | NPN |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | NO LEAD |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 300 MHz |
| 最大关闭时间(toff) | 285 ns |
| VCEsat-Max | 1 V |
| CHT2222A | CHT918 | CHT2369A | CHT2907A | |
|---|---|---|---|---|
| 描述 | Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA MINIATURE, HERMETIC SEALED, CERAMIC, CERSOT-23, LCC-3 | RF Small Signal Bipolar Transistor, 1-Element, Silicon, NPN, ULTRA MINIATURE, HERMETIC SEALED, CERAMIC, CERSOT-23, LCC-3 | Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA MINIATURE, HERMETIC SEALED, CERAMIC, CERSOT-23, LCC-3 | Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, PNP, Silicon, ULTRA MINIATURE, HERMETIC SEALED, CERAMIC, CERSOT-23, LCC-3 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 |
| 零件包装代码 | DLCC | DLCC | DLCC | DLCC |
| 包装说明 | ULTRA MINIATURE, HERMETIC SEALED, CERAMIC, CERSOT-23, LCC-3 | ULTRA MINIATURE, HERMETIC SEALED, CERAMIC, CERSOT-23, LCC-3 | ULTRA MINIATURE, HERMETIC SEALED, CERAMIC, CERSOT-23, LCC-3 | ULTRA MINIATURE, HERMETIC SEALED, CERAMIC, CERSOT-23, LCC-3 |
| 针数 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant |
| 基于收集器的最大容量 | 8 pF | 1.7 pF | 4 pF | 8 pF |
| 集电极-发射极最大电压 | 40 V | 15 V | 15 V | 60 V |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 40 | 20 | 20 | 50 |
| JESD-30 代码 | R-CDSO-N3 | R-CDSO-N3 | R-CDSO-N3 | R-CDSO-N3 |
| JESD-609代码 | e0 | e0 | e0 | e0 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | NPN | NPN | NPN | PNP |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| 端子位置 | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | AMPLIFIER | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 300 MHz | 600 MHz | 500 MHz | 200 MHz |
| VCEsat-Max | 1 V | 0.4 V | 0.5 V | 1.6 V |
| 厂商名称 | Central Semiconductor | - | Central Semiconductor | Central Semiconductor |
| 最大关闭时间(toff) | 285 ns | - | 18 ns | 100 ns |
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