7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
2N2151
APPLICATIONS:
•
•
Fast Switching
High Frequency Switching and Amplifying
FEATURES:
•
•
High Reliability
Greater Gain Stability
5 Amp, 100V,
Planar, NPN
Power Transistors
JAN, JANTX
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200
°
C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
TO-59
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
CBO
*
V
CEO
*
V
EBO
*
I
C
*
I
C
*
I
B
*
T
STG
*
T
J
*
*
P
T
*
θ
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Collector Current
Continuous Collector Current
Continuous Base Current
Storage Temperature
Operating Junction Temperature
Lead Temperature 1/16"
From Case for 10 Sec.
Power Dissipation
T
A
= 25
°
C
T
C
= 100
°
C
Thermal Resistance
Junction to Case
VALUE
150
100
8
10
5
2
-65 to 200
-65 to 200
230
UNITS
V
V
V
A
A
A
°
C
°
C
°
C
2
30
3.33
W
W
°
C/W
JC
* Indicates JEDEC registered data.
MSC0942A.DOC 11-03-98
2N2151
ELECTRICAL CHARACTERISTICS
(25
°
Case Temperature Unless Otherwise Noted)
SYMBOL
BV
CBO
*
BV
CEO
*
BV
EBO
*
I
CEO
*
I
CEX
*
I
CBO
*
hFE*
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter
Voltage (Note 1)
Emitter-Base Voltage
Collector-Emitter
Cutoff Current
Collector-Emitter
Cutoff Current
Collector-Base
Cutoff Current
DC Current Gain
(Note 1)
AC Current Gain
Collector Saturation
Voltage (Note 1)
Base Saturation
Voltage (Note 1)
Base On-Voltage
(Note 1)
Gain-Bandwidth
Product
Output Capacitance
TEST CONDITIONS
I
C
= 100
µ
Adc, Cond. D
I
C
= 50 mAdc, Cond. D
I
E
= 2
µ
Adc, Cond. D
V
CE
= 120 Vdc Cond. D
V
CE
= 120 Vdc, V
EB
= 0.5 Vdc, Cond. A
V
CE
= 120 Vdc, V
EB
= 0.5 Vdc, Cond. A T
A
= 150
°
C
V
CB
= 120 Vdc, Cond. D
I
C
= 1 Adc, V
CE
= 5 Vdc
I
C
= 0.5 Adc, V
CE
= 5 Vdc
I
C
= 0.1 Adc, V
CE
= 5 Vdc
I
C
= 0.1 Adc, V
CE
= 30 Vdc, f = 1 KHz
I
C
= 1 Adc, I
B
= 0.1 Adc
I
C
= 1 Adc, I
B
= 0.1 Adc
I
C
= 1 Adc, V
CE
= 2 Vdc
I
C
= 1 Adc, V
CE
= 30 Vdc, f = 10 MHz
V
CB
= 20 Vdc, 1
E
= 0, f = 1 MHz
VALUE
Min.
150
100
8
----
----
----
----
40
40
40
40
----
----
----
10
----
Max
----
----
----
5
5
100
5
120
120
----
160
1.0
1.2
1.2
70
160
Units
Vdc
Vdc
Vdc
µ
Adc
µ
Adc
µ
A
µ
Adc
----
----
----
----
Vdc
Vdc
Vdc
MHz
pf
hFE*
V
CE(sat)
*
V
BE(sat)*
V
BE(on)
*
f
T
*
C
ob
*
Note 1: Pulse Test: PW = 300
µ
s, Duty Cycle
≤
2%.
* Indicates JEDEC registered data.
MSC0942A.DOC 11-03-98
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