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19-2794; Rev 0; 4/03
Ultra-Low-Power, 45Msps, Dual 8-Bit ADC
General Description
The MAX1193 is an ultra-low-power, dual, 8-bit,
45Msps analog-to-digital converter (ADC). The device
features two fully differential wideband track-and-hold
(T/H) inputs. These inputs have a 440MHz bandwidth
and accept fully differential or single-ended signals.
The MAX1193 delivers a typical signal-to-noise and dis-
tortion (SINAD) of 48.5dB at an input frequency of
5.5MHz and a sampling rate of 45Msps while consum-
ing only 57mW. This ADC operates from a 2.7V to 3.6V
analog power supply. A separate 1.8V to 3.6V supply
powers the digital output driver. In addition to ultra-low
operating power, the MAX1193 features three power-
down modes to conserve power during idle periods.
Excellent dynamic performance, ultra-low power, and
small size make the MAX1193 ideal for applications in
imaging, instrumentation, and digital communications.
An internal 1.024V precision bandgap reference sets
the full-scale range of the ADC to ±0.512V. A flexible
reference structure allows the MAX1193 to use its inter-
nal reference or accept an externally applied reference
for applications requiring increased accuracy.
The MAX1193 features parallel, multiplexed, CMOS-
compatible tri-state outputs. The digital output format is
offset binary. A separate digital power input accepts a
voltage from 1.8V to 3.6V for flexible interfacing to dif-
ferent logic levels. The MAX1193 is available in a 5mm
×
5mm, 28-pin thin QFN package, and is specified for
the extended industrial (-40°C to +85°C) temperature
range.
For higher sampling frequency applications, refer to the
MAX1195–MAX1198 dual 8-bit ADCs. Pin-compatible
versions of the MAX1193 are also available. Refer to the
MAX1191 data sheet for 7.5Msps, and the MAX1192
data sheet for 22Msps.
Features
o
Ultra-Low Power
57mW (Normal Operation: 45Msps)
0.3µW (Shutdown Mode)
o
Excellent Dynamic Performance
48.5dB/48.3dB SNR at f
IN
= 5.5MHz/100MHz
70dBc/68dBc SFDR at f
IN
= 5.5MHz/100MHz
o
2.7V to 3.6V Single Analog Supply
o
1.8V to 3.6V TTL/CMOS-Compatible Digital
Outputs
o
Fully Differential or Single-Ended Analog Inputs
o
Internal/External Reference Option
o
Multiplexed CMOS-Compatible Tri-State Outputs
o
28-Pin Thin QFN Package
o
Evaluation Kit Available (Order MAX1193EVKIT)
MAX1193
Ordering Information
PART
TEMP RANGE PIN-PACKAGE
MAX1193ETI -40°C to +85°C 28 Thin QFN-EP* (5mm x 5mm)
*EP
= Exposed paddle.
Pin Configuration
TOP VIEW
REFIN
REFN
REFP
COM
PD0
PD1
V
DD
28
27
26
25
24
23
Applications
Ultrasound and Medical Imaging
IQ Baseband Sampling
Battery-Powered Portable Instruments
Low-Power Video
WLAN, Mobile DSL, WLL Receiver
22
INA-
INA+
GND
CLK
GND
INB+
INB-
1
2
3
4
5
6
7
8
EXPOSED PADDLE
21
20
19
D0
D1
D2
D3
A/B
D4
D5
MAX1193
18
17
16
15
12
13
D7
10
11
GND
OGND
5mm x 5mm THIN QFN
________________________________________________________________
Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
OV
DD
V
DD
V
DD
D6
14
9
Ultra-Low-Power, 45Msps, Dual 8-Bit ADC
MAX1193
ABSOLUTE MAXIMUM RATINGS
V
DD
, OV
DD
to GND ...............................................-0.3V to +3.6V
OGND to GND.......................................................-0.3V to +0.3V
INA+, INA-, INB+, INB- to GND .................-0.3V to (V
DD
+ 0.3V)
CLK, REFIN, REFP, REFN, COM to GND ...-0.3V to (V
DD
+ 0.3V)
PD0, PD1 to OGND .................................-0.3V to (OV
DD
+ 0.3V)
Digital Outputs to OGND .........................-0.3V to (OV
DD
+ 0.3V)
Continuous Power Dissipation (T
A
= +70°C)
28-Pin Thin QFN (derated 20.8mW/°C above +70°C) ..1667mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
DD
= 3.0V, OV
DD
= 1.8V, V
REFIN
= V
DD
(internal reference), C
L
≈
10pF at digital outputs, f
CLK
= 45MHz, C
REFP
= C
REFN
= C
COM
=
0.33µF, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 1)
PARAMETER
DC ACCURACY
Resolution
Integral Nonlinearity
Differential Nonlinearity
Offset Error
Gain Error
DC Gain Matching
Gain Temperature Coefficient
Power-Supply Rejection
ANALOG INPUT
Differential Input Voltage Range
Common-Mode Input Voltage
Range
Input Resistance
Input Capacitance
CONVERSION RATE
Maximum Clock Frequency
Data Latency
f
CLK
Channel A
Channel B
f
IN
= 3.75MHz
SNR
f
IN
= 5.5MHz
f
IN
= 22.5MHz
Signal-to-Noise and Distortion
(Note 2)
f
IN
= 3.75MHz
SINAD
f
IN
= 5.5MHz
f
IN
= 22.5MHz
47
47
45
5.0
5.5
48.5
48.5
48.4
48.5
48.5
48.4
dB
dB
MHz
Clock
cycles
V
DIFF
V
COM
R
IN
C
IN
Switched capacitor load
Differential or single-ended inputs
±0.512
V
DD
/ 2
120
5
V
V
kΩ
pF
Offset (V
DD
±5%)
Gain (V
DD
±5%)
INL
DNL
No missing codes over temperature
≥
+25°C
< +25°C
Excludes REFP - REFN error
±0.01
±30
±0.2
±0.05
8
±0.16
±0.15
±1.00
±1.00
±4
±6
±2
±0.2
Bits
LSB
LSB
%FS
%FS
dB
ppm/°C
LSB
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
DYNAMIC CHARACTERISTICS
(differential inputs, 4096-point FFT)
Signal-to-Noise Ratio
(Note 2)
2
_______________________________________________________________________________________
Ultra-Low-Power, 45Msps, Dual 8-Bit ADC
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= 3.0V, OV
DD
= 1.8V, V
REFIN
= V
DD
(internal reference), C
L
≈
10pF at digital outputs, f
CLK
= 45MHz, C
REFP
= C
REFN
= C
COM
=
0.33µF, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 1)
PARAMETER
Spurious-Free Dynamic Range
(Note 2)
SYMBOL
f
IN
= 3.75MHz
SFDR
f
IN
= 5.5MHz
f
IN
= 22.5MHz
Third-Harmonic Distortion
(Note 2)
Intermodulation Distortion
Third-Order Intermodulation
Total Harmonic Distortion
(Note 2)
Small-Signal Bandwidth
Full-Power Bandwidth
Aperture Delay
Aperture Jitter
Overdrive Recovery Time
REFP Output Voltage
REFN Output Voltage
COM Output Voltage
Differential Reference Output
Differential Reference Output
Temperature Coefficient
Maximum REFP/REFN/COM
Source Current
Maximum REFP/REFN/COM Sink
Current
V
COM
V
REF
V
REFTC
I
SOURCE
I
SINK
V
REFP
- V
REFN
f
IN
= 3.75MHz
HD3
f
IN
= 5.5MHz
f
IN
= 22.5MHz
IMD
IM3
f
IN1
= 1MHz at -7dB FS, f
IN2
= 1.01MHz
at -7dB FS
f
IN1
= 1MHz at -7dB FS, f
IN2
= 1.01MHz
at -7dB FS
f
IN
= 3.75MHz
THD
SSBW
FPBW
t
AD
t
AJ
1.5
×
full-scale input
V
REFP
- V
COM
V
REFN
- V
COM
V
DD
/ 2
- 0.15
f
IN
= 5.5MHz
f
IN
= 22.5MHz
Input at -20dB FS
Input at -0.5dB FS
60.0
CONDITIONS
MIN
TYP
70.7
70.0
71.5
-79.6
-79.0
76.1
-66
-70
-70.8
-70.0
-70.1
440
440
1.5
2
2
0.256
-0.256
V
DD
/ 2
0.512
±30
2
2
V
DD
/ 2
+ 0.15
MHz
MHz
ns
ps
RMS
ns
V
V
V
V
ppm/°C
mA
mA
-57.0
dBc
dBc
dBc
dBc
dBc
MAX
UNITS
MAX1193
INTERNAL REFERENCE
(REFIN = V
DD
; V
REFP
, V
REFN
, and V
COM
are generated internally)
BUFFERED EXTERNAL REFERENCE
(V
REFIN
= 1.024V, V
REFP
, V
REFN
, and V
COM
are generated internally)
REFIN Input Voltage
COM Output Voltage
Differential Reference Output
Maximum REFP/REFN/COM
Source Current
V
REFIN
V
COM
V
REF
I
SOURCE
V
REFP
- V
REFN
V
DD
/ 2
- 0.15
1.024
V
DD
/ 2
0.512
2
V
DD
/ 2
+ 0.15
V
V
V
mA
_______________________________________________________________________________________
3
Ultra-Low-Power, 45Msps, Dual 8-Bit ADC
MAX1193
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= 3.0V, OV
DD
= 1.8V, V
REFIN
= V
DD
(internal reference), C
L
≈
10pF at digital outputs, f
CLK
= 45MHz, C
REFP
= C
REFN
= C
COM
=
0.33µF, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 1)
PARAMETER
Maximum REFP/REFN/COM Sink
Current
REFIN Input Resistance
REFIN Input Current
REFP Input Voltage
REFN Input Voltage
COM Input Voltage
Differential Reference Input
Voltage
REFP Input Resistance
REFN Input Resistance
DIGITAL INPUTS
(CLK, PD0, PD1)
CLK
Input High Threshold
V
IH
PD0, PD1
CLK
Input Low Threshold
V
IL
PD0, PD1
Input Hysteresis
Digital Input Leakage Current
Digital Input Capacitance
DIGITAL OUTPUTS
(D7–D0, A/B)
Output Voltage Low
Output Voltage High
Tri-State Leakage Current
Tri-State Output Capacitance
POWER REQUIREMENTS
Analog Supply Voltage
Digital Output Supply Voltage
V
DD
OV
DD
2.7
1.8
3.0
3.6
V
DD
V
V
V
OL
V
OH
I
LEAK
C
OUT
5
I
SINK
= 200µA
I
SOURCE
= 200µA
0.8 x
OV
DD
±5
0.2 x
OV
DD
V
V
µA
pF
V
HYST
DI
IN
DC
IN
CLK at GND or V
DD
PD0 and PD1 at OGND or OV
DD
5
0.1
±5
±5
0.7 x
V
DD
0.7 x
OV
DD
0.3 x
V
DD
0.3 x
OV
DD
V
µA
pF
V
COM
V
REF
R
REFP
R
REFN
V
REFP
- V
REFN
Measured between REFP and COM
Measured between REFN and COM
V
REFP
- V
COM
V
REFN
- V
COM
SYMBOL
I
SINK
CONDITIONS
MIN
TYP
2
>500
-0.7
0.256
-0.256
V
DD
/ 2
0.512
4
4
MAX
UNITS
mA
kΩ
µA
V
V
V
V
kΩ
kΩ
UNBUFFERED EXTERNAL REFERENCE
(REFIN = GND, V
REFP
, V
REFN
, and V
COM
are applied externally)
V
V
4
_______________________________________________________________________________________
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