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MAX1192ETI

产品描述IC,A/D CONVERTER,DUAL,8-BIT,CMOS,LLCC,28PIN
产品类别模拟混合信号IC    转换器   
文件大小1MB,共28页
制造商Rochester Electronics
官网地址https://www.rocelec.com/
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MAX1192ETI概述

IC,A/D CONVERTER,DUAL,8-BIT,CMOS,LLCC,28PIN

MAX1192ETI规格参数

参数名称属性值
是否无铅含铅
厂商名称Rochester Electronics
零件包装代码QFN
包装说明,
针数28
Reach Compliance Codeunknown
转换器类型D/A CONVERTER
JESD-609代码e0
湿度敏感等级1
输出位码OFFSET BINARY
峰值回流温度(摄氏度)240
端子面层TIN LEAD
处于峰值回流温度下的最长时间20

MAX1192ETI文档预览

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19-2835; Rev 2; 7/09
Ultra-Low-Power, 22Msps, Dual 8-Bit ADC
General Description
The MAX1192 is an ultra-low-power, dual, 8-bit, 22Msps
analog-to-digital converter (ADC). The device features
two fully differential wideband track-and-hold (T/H) inputs.
These inputs have a 440MHz bandwidth and accept fully
differential or single-ended signals. The MAX1192 deliv-
ers a typical signal-to-noise and distortion (SINAD) of
48.6dB at an input frequency of 5.5MHz and a sampling
rate of 22Msps while consuming only 27.3mW. This ADC
operates from a 2.7V to 3.6V analog power supply. A sep-
arate 1.8V to 3.6V supply powers the digital output driver.
In addition to ultra-low operating power, the MAX1192
features three power-down modes to conserve power
during idle periods. Excellent dynamic performance,
ultra-low power, and small size make the MAX1192 ideal
for applications in imaging, instrumentation, and digital
communications.
An internal 1.024V precision bandgap reference sets
the full-scale range of the ADC to ±0.512V. A flexible
reference structure allows the MAX1192 to use its inter-
nal reference or accept an externally applied reference
for applications requiring increased accuracy.
The MAX1192 features parallel, multiplexed, CMOS-
compatible tri-state outputs. The digital output format is
offset binary. A separate digital power input accepts a
voltage from 1.8V to 3.6V for flexible interfacing to dif-
ferent logic levels. The MAX1192 is available in a 5mm
×
5mm, 28-pin thin QFN package, and is specified for
the extended industrial (-40°C to +85°C) temperature
range.
For higher sampling frequency applications, refer to the
MAX1195–MAX1198 dual 8-bit ADCs. Pin-compatible
versions of the MAX1192 are also available. Refer to the
MAX1191 data sheet for 7.5Msps, and the MAX1193
data sheet for 45Msps.
Features
o
Ultra-Low Power
27.3mW (Normal Operation: 22Msps)
1.8µW (Shutdown Mode)
o
Excellent Dynamic Performance
48.6dB/47.2dB SNR at f
IN
= 5.5MHz/125MHz
70dBc/69dBc SFDR at f
IN
= 5.5MHz/125MHz
o
2.7V to 3.6V Single Analog Supply
o
1.8V to 3.6V TTL/CMOS-Compatible Digital
Outputs
o
Fully Differential or Single-Ended Analog Inputs
o
Internal/External Reference Option
o
Multiplexed CMOS-Compatible Tri-State Outputs
o
28-Pin Thin QFN Package
o
Evaluation Kit Available (Order MAX1193EVKIT)
MAX1192
Ordering Information
PART
MAX1192ETI-T
TEMP RANGE
-40°C to +85°C
PIN-PACKAGE
28 Thin QFN-EP*
-Denotes
a package containing lead(Pb).
*EP = Exposed paddle.
T = Tape and reel.
Pin Configuration
TOP VIEW
A/B
D0
D1
D2
D3
D4
D5
21
20
19
18
17
16
Applications
Ultrasound and Medical Imaging
IQ Baseband Sampling
Battery-Powered Portable Instruments
Low-Power Video
WLAN, Mobile DSL, WLL Receiver
PD1
PD0
REFIN
COM
REFN
REFP
V
DD
15
14
13
12
22
23
24
25
26
27
28
1
EXPOSED PADDLE
D6
D7
OV
DD
OGND
GND
V
DD
V
DD
MAX1192
11
10
9
8
5
6
INB+
2
3
4
INA-
INA+
GND
CLK
GND
5mm x 5mm THIN QFN
________________________________________________________________
Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
INB-
7
Ultra-Low-Power, 22Msps, Dual 8-Bit ADC
MAX1192
ABSOLUTE MAXIMUM RATINGS
V
DD
, OV
DD
to GND ...............................................-0.3V to +3.6V
OGND to GND.......................................................-0.3V to +0.3V
INA+, INA-, INB+, INB- to GND .................-0.3V to (V
DD
+ 0.3V)
CLK, REFIN, REFP, REFN, COM to GND ...-0.3V to (V
DD
+ 0.3V)
PD0, PD1 to OGND .................................-0.3V to (OV
DD
+ 0.3V)
Digital Outputs to OGND .........................-0.3V to (OV
DD
+ 0.3V)
Continuous Power Dissipation (T
A
= +70°C)
28-Pin Thin QFN (derated 20.8mW/°C above +70°C) ..1667mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range ............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
DD
= 3.0V, OV
DD
= 1.8V, V
REFIN
= V
DD
(internal reference), C
L
10pF at digital outputs, f
CLK
= 22MHz, C
REFP
= C
REFN
= C
COM
=
0.33µF, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 1)
PARAMETER
DC ACCURACY
Resolution
Integral Nonlinearity
Differential Nonlinearity
Offset Error
Gain Error
DC Gain Matching
Gain Temperature Coefficient
Power-Supply Rejection
ANALOG INPUT
Differential Input Voltage Range
Common-Mode Input Voltage
Range
Input Resistance
Input Capacitance
CONVERSION RATE
Clock Frequency Range
Data Latency
f
CLK
Channel A
Channel B
f
IN
= 1.875MHz
SNR
f
IN
= 5.5MHz
f
IN
= 11MHz
Signal-to-Noise and Distortion
(Note 2)
f
IN
= 1.875MHz
SINAD
f
IN
= 5.5MHz
f
IN
= 11MHz
47
47
7.5
5.0
5.5
48.6
48.6
48.6
48.7
48.6
48.6
dB
dB
22
MHz
Clock
cycles
V
DIFF
V
COM
R
IN
C
IN
Switched capacitor load
Differential or single-ended inputs
±0.512
V
DD
/ 2
245
5
V
V
pF
Offset (V
DD
±5%)
Gain (V
DD
±5%)
INL
DNL
No missing codes over temperature
+25°C
< +25°C
Excludes REFP - REFN error
±0.01
±30
±0.02
±0.05
8
±0.15
±0.14
±1.00
±1.00
±4
±6
±2
±0.2
Bits
LSB
LSB
%FS
%FS
dB
ppm/°C
LSB
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
DYNAMIC CHARACTERISTICS
(differential inputs, 4096-point FFT)
Signal-to-Noise Ratio
(Note 2)
2
_______________________________________________________________________________________
Ultra-Low-Power, 22Msps, Dual 8-Bit ADC
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= 3.0V, OV
DD
= 1.8V, V
REFIN
= V
DD
(internal reference), C
L
10pF at digital outputs, f
CLK
= 22MHz, C
REFP
= C
REFN
= C
COM
=
0.33µF, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 1)
PARAMETER
Spurious-Free Dynamic Range
(Note 2)
SYMBOL
SFDR
f
IN
= 5.5MHz
f
IN
= 11MHz
Third-Harmonic Distortion
(Note 2)
Intermodulation Distortion
Third-Order Intermodulation
Total Harmonic Distortion
(Note 2)
Small-Signal Bandwidth
Full-Power Bandwidth
Aperture Delay
Aperture Jitter
Overdrive Recovery Time
REFP Output Voltage
REFN Output Voltage
COM Output Voltage
Differential Reference Output
Differential Reference Output
Temperature Coefficient
Maximum REFP/REFN/COM
Source Current
Maximum REFP/REFN/COM Sink
Current
V
COM
V
REF
V
REFTC
I
SOURCE
I
SINK
V
REFP
- V
REFN
f
IN
= 1.875MHz
HD3
f
IN
= 5.5MHz
f
IN
= 11MHz
IMD
IM3
f
IN1
= 1MHz at -7dB FS, f
IN2
= 1.01MHz at
-7dB FS
f
IN1
= 1MHz at -7dB FS, f
IN2
= 1.01MHz at
-7dB FS
f
IN
= 1.875MHz
THD
SSBW
FPBW
t
AD
t
AJ
1.5
×
full-scale input
V
REFP
- V
COM
V
REFN
- V
COM
V
DD
/ 2
- 0.15
f
IN
= 5.5MHz
f
IN
= 11MHz
Input at -20dB FS
Input at -0.5dB FS
CONDITIONS
f
IN
= 1.875MHz
59.0
MIN
TYP
70.8
70.0
70.4
75.8
-74.0
-74.8
-64
-67
-71.0
-70.0
-70.2
440
440
1.5
2
2
0.256
-0.256
V
DD
/ 2
0.512
±30
2
2
V
DD
/ 2
+ 0.15
MHz
MHz
ns
ps
RMS
ns
V
V
V
V
ppm/°C
mA
mA
-57.0
dBc
dBc
dBc
dBc
dBc
MAX
UNITS
MAX1192
INTERNAL REFERENCE
(REFIN = V
DD
; V
REFP
, V
REFN
, and V
COM
are generated internally)
BUFFERED EXTERNAL REFERENCE
(V
REFIN
= 1.024V, V
REFP
, V
REFN
, and V
COM
are generated internally)
REFIN Input Voltage
COM Output Voltage
Differential Reference Output
Maximum REFP/REFN/COM
Source Current
V
REFIN
V
COM
V
REF
I
SOURCE
V
REFP
- V
REFN
V
DD
/ 2
- 0.15
1.024
V
DD
/ 2
0.512
2
V
DD
/ 2
+ 0.15
V
V
V
mA
_______________________________________________________________________________________
3
Ultra-Low-Power, 22Msps, Dual 8-Bit ADC
MAX1192
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= 3.0V, OV
DD
= 1.8V, V
REFIN
= V
DD
(internal reference), C
L
10pF at digital outputs, f
CLK
= 22MHz, C
REFP
= C
REFN
= C
COM
=
0.33µF, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 1)
PARAMETER
Maximum REFP/REFN/COM Sink
Current
REFIN Input Resistance
REFIN Input Current
REFP Input Voltage
REFN Input Voltage
COM Input Voltage
Differential Reference Input
Voltage
REFP Input Resistance
REFN Input Resistance
DIGITAL INPUTS
(CLK, PD0, PD1)
CLK
Input High Threshold
V
IH
PD0, PD1
CLK
Input Low Threshold
V
IL
PD0, PD1
Input Hysteresis
Digital Input Leakage Current
Digital Input Capacitance
DIGITAL OUTPUTS
(D7–D0, A/B)
Output Voltage Low
Output Voltage High
Tri-State Leakage Current
Tri-State Output Capacitance
V
OL
V
OH
I
LEAK
C
OUT
5
I
SINK
= 200µA
I
SOURCE
= 200µA
0.8 x
OV
DD
±5
0.2 x
OV
DD
V
V
µA
pF
V
HYST
DI
IN
DC
IN
CLK at GND or V
DD
PD0 and PD1 at OGND or OV
DD
5
0.1
±5
±5
0.7 x
V
DD
0.7 x
OV
DD
0.3 x
V
DD
0.3 x
OV
DD
V
µA
pF
V
COM
V
REF
R
REFP
R
REFN
V
REFP
- V
REFN
Measured between REFP and COM
Measured between REFN and COM
V
REFP
- V
COM
V
REFN
- V
COM
SYMBOL
I
SINK
CONDITIONS
MIN
TYP
2
>500
-0.7
0.256
-0.256
V
DD
/ 2
0.512
4
4
MAX
UNITS
mA
µA
V
V
V
V
UNBUFFERED EXTERNAL REFERENCE
(REFIN = GND, V
REFP
, V
REFN
, and V
COM
are applied externally)
V
V
4
_______________________________________________________________________________________

 
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