TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PNP SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500 /336
DEVICES
LEVELS
2N3810
2N3810L
2N3810U
2N3811
2N3811L
2N3811U
JAN
JANTX
JANTV
JANS
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CEO
V
CBO
V
EBO
I
C
One
Section
1
Total Power Dissipation
@ T
A
= +25°C
P
T
T
J
, T
stg
200
Value
60
60
5.0
50
Both
Sections
2
350
mW
°C
TO-78
Unit
Vdc
Vdc
Vdc
mAdc
Operating & Storage Junction Temperature Range
-65 to +200
NOTES:
1. Derate linearly 1.143mW/°C for T
A
> +25°C (one section)
2. Derate linearly 2.000mW/°C for T
A
> +25°C (both sections)
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 100μAdc
Collector-Base Cutoff Current
V
CB
= 50Vdc
V
CB
= 60Vdc
Emitter-Base Cutoff Current
V
EB
= 4.0Vdc
V
EB
= 5.0Vdc
Symbol
Min.
Max.
Unit
V
(BR)CEO
60
Vdc
U - Package
ηAdc
μAdc
ηAdc
μAdc
I
CBO
10
10
10
10
I
EBO
T4-LDS-0118 Rev. 2 (110152)
Page 1 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS (con’t)
Parameters / Test Conditions
ON CHARACTERTICS
Forward-Current Transfer Ratio
I
C
= 10μAdc, V
CE
= 5.0Vdc
I
C
= 100μAdc, V
CE
= 5.0Vdc
I
C
= 1.0mAdc, V
CE
= 5.0Vdc
I
C
= 10mAdc, V
CE
= 5.0Vdc
I
C
= 1.0μAdc, V
CE
= 5.0Vdc
I
C
= 10μAdc, V
CE
= 5.0Vdc
I
C
= 100μAdc, V
CE
= 5.0Vdc
I
C
= 1.0mAdc, V
CE
= 5.0Vdc
I
C
= 10mAdc, V
CE
= 5.0Vdc
Collector-Emitter Saturation Voltage
I
C
= 100μAdc, I
B
= 10μAdc
I
C
= 1.0mAdc, I
B
= 100μAdc
Base-Emitter Saturation Voltage
I
C
= 100μAdc, I
B
= 10μAdc
I
C
= 1.0mAdc, I
B
= 100μAdc
Base-Emitter Non-Saturation Voltage
V
CE
= 5.0Adc, I
C
= 100μAdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
I
C
= 500μAdc, V
CE
= 5.0Vdc, f = 30MHz
I
C
= 1.0mAdc, V
CE
= 5.0Vdc, f = 100MHz
Small-Signal Short Circuit Forward Current Transfer Ratio
I
C
= 1.0mAdc, V
CE
= 10Vdc, f = 1.0kHz
2N3810, 2N3810L , 2N3810U
2N3811, 2N3811L , 2N3811U
Small-Signal Short Circuit Input Impedance
I
C
= 1.0mAdc, V
CE
= 10Vdc, f = 1.0kHz
2N3810, 2N3810L , 2N3810U
2N3811, 2N3811L , 2N3811U
1.0
1.0
150
300
3.0
3.0
5.0
Symbol
Min.
Max.
Unit
2N3810, 2N3810L , 2N3810U
h
FE
100
150
150
125
75
225
300
300
250
450
450
2N3811, 2N3811L, 2N3811U
h
FE
900
900
V
CE(sat)
0.2
0.25
Vdc
V
BE(sat)
0.7
0.8
Vdc
V
BE
0.7
Vdc
|h
fe
|
5.0
600
900
30
40
60
kΩ
h
fe
h
je
Small-Signal Short Circuit Output Admittance
I
C
= 1.0mAdc, V
CE
= 10Vdc, f = 1.0kHz
2N3810, 2N3810L , 2N3810U
2N3811, 2N3811L , 2N3811U
h
oe
μmhos
T4-LDS-0118 Rev. 2 (110152)
Page 2 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
DYNAMIC CHARACTERISTICS (cont.)
Parameters / Test Conditions
Output Capacitance
V
CB
= 5.0Vdc, I
E
= 0, 100kHz
≤
f
≤
1.0MHz
Input Capacitance
V
EB
= 5.0Vdc, I
C
= 0, 100kHz
≤
f
≤
1.0MHz
Noise Figure
I
C
= 100μAdc, V
CE
= 10Vdc, f = 100Hz, R
G
= 3.0kΩ
I
C
= 100μAdc, V
CE
= 10Vdc, f = 1.0kHz, R
G
= 3.0kΩ
I
C
= 100μAdc, V
CE
= 10Vdc, f = 10kHz, R
G
= 3.0kΩ
I
C
= 100μAdc, V
CE
= 10Vdc, f = 10Hz to 15.7kHz, R
G
= 3.0kΩ
I
C
= 100μAdc, V
CE
= 10Vdc, f = 100Hz, R
G
= 3.0kΩ
I
C
= 100μAdc, V
CE
= 10Vdc, f = 1.0kHz, R
G
= 3.0kΩ
I
C
= 100μAdc, V
CE
= 10Vdc, f = 10kHz, R
G
= 3.0kΩ
I
C
= 100μAdc, V
CE
= 10Vdc, f = 10Hz to 15.7kHz, R
G
= 3.0kΩ
2N3810, L, U
2N3810, L, U
2N3810, L, U
2N3810, L, U
2N3811, L, U
2N3811, L, U
2N3811, L, U
2N3811, L, U
F
1
F
2
F
3
F
4
F
1
F
2
F
3
F
4
7.0
3.0
2.5
3.5
4.0
1.5
2.0
2.5
dB
dB
Symbol
C
obo
C
Ibo
Min.
Max.
5.0
8.0
Unit
pF
pF
T4-LDS-0118 Rev. 2 (110152)
Page 3 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Ltr
CD
CH
HD
HT
LC
LD
LL
α
TL
TW
DIMENSIONS
Inches
Millimeters
Min
Max
Min
Max
.305
.335
7.75
8.51
.150
.185
3.81
4.70
.335
.370
8.51
9.40
.009
.041
0.23
1.04
.200 BSC
5.08 BSC
.016
.021
0.41
0.53
See notes 10, 11, and 13
45 TP
45 TP
.029
.045
0.74
1.14
.028
.034
0.71
0.86
Notes
10
9
5, 6
4, 5
NOTES:
1
Dimensions are in inches.
2
Millimeters are given for general information only.
3
Refer to rules for dimensioning Semiconductor Product Outlines included in Publication No. 95.
4
Lead number 4 and 8 omitted on this variation.
5
TW must be held to a minimum length of .021 inch (0.53 mm).
6
LL measured from maximum HD.
7
Details of outline in this zone optional.
8
CD shall not vary more than .010 inch (0.25mm) in zone P. This zone is controlled for automatic handling.
9
Leads at gauge plane .054 - .055 inch (1.37 - 1.40 mm) below seating plane shall be within .007 (0.18 mm) radius of true
position (TP) at a maximum material condition (MMC) relative to the tab at MMC. The device may be measured by direct
methods or by the gauge and gauging procedure described on gauge drawing GS-1.
10 LD applies to LL minimum.
11 r (radius) applies to both inside corners of tab.
12 For transistor types 2N3810 and 2N3811, LL is .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm) maximum. (TO-
78).
13 For transistor types 2N3810L and 2N3811L, LL is 1.500 inches (38.10 mm) minimum, and 1.750 inches (44.45 mm)
maximum.
14 In accordance with AMSE Y14.5M, diameters are equivalent to
φx
symbology.
15 Leads 3 and 5 = emitter, leads 2 and 6 = base, leads 1 and 7 = collector.
FIGURE 1.
Physical dimensions (similar to TO-78)
T4-LDS-0118 Rev. 2 (110152)
Page 4 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Symbol
BL
BL2
BW
BW2
CH
LH
LL1
LL2
LS1
LS2
LW
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.240
.250
6.10
6.35
.250
6.35
.165
.175
4.19
4.45
.175
4.45
.044
.080
1.12
2.03
.026
.039
0.66
0.99
.060
.070
1.52
1.78
.082
.098
2.08
2.49
.095
.105
2.41
2.67
.045
.055
1.14
1.40
.022
.028
0.56
0.71
Pin no.
1
2
3
4
5
6
Transistor
Collector no. 1
Base no. 1
Base no. 2
Collector no. 2
Emitter no. 2
Emitter no. 1
NOTES:
1 Dimensions are in inches.
2 Millimeters are given for general information only.
3 In accordance with AMSE Y14.5M, diameters are equivalent to
φx
symbology.
FIGURE 2.
Physical dimensions (2N3810U and 2N3811U).
T4-LDS-0118 Rev. 2 (110152)
Page 5 of 5
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