Mesa Beam Lead PIN Diodes
Description
Metelics’ Beam Lead PIN diodes provide low microwave
capacitance and fast switching performance. They are
ideal for use in broadband high speed multi-throw switches
as well as phase shifters, modulators and attenuators.
Features
•
•
•
Fast Switching
Rugged Construction 5 gram Pulls typ.
Oxide/ Polyimide Double Passivation
Electrical Specifications,
T
A
= 25 ºC
Part Number
MBP1030-B1
1
MBP1033-B1
1
MBP1034-B1
1
MBP1035-B1
1
MBP1036-B1
1
MBP2030-B1
1
MBP2034-B1
1
Test
Conditions
V
BR
V
MIN
TYP
R
S
MAX
TYP
C
J
pF
MAX
τ
ns
TYP
t
rr
ns
TYP
100
100
100
60
60
60
60
I
R
=10 µA
5.5
4.0
6.0
3.5
2.5
6.0
5.0
6.5
5.0
7.0
4.0
3.0
7.0
6.0
.020
.025
.025
.030
.040
.023
.026
.025
.030
.030
.040
.050
.025
.030
35
40
25
30
40
20
20
I
F
= 10 mA
I
R
= 6 mA
4.9
4.8
5.5
2.5
2.4
4.1
3.2
I
F
= 10 mA
V
R
= 10 V
I
F
= 10mA
f = 1-3.0 GHz
V
R
= 10 V
f = 2-18 GHz
swept
Absolute Maximum Ratings
Parameters
Total Power Dissipation
Operation Temperature
Storage Temperature
Terminal Strength
-65ºC to +1
75ºC
-65ºC to +200ºC
3 Grams Minimum
Limit
250 mW at +25ºC Derate Linearly to zero at +1
75ºC
Revision Date: 05/01/05
Mesa Beam Lead PIN Diodes
Typical Performance,
T
A
= 25 ºC
Figure 1.
Forward DC Characteristics
r
Figure 2.
Series Isolation vs Frequenc
olation
Frequency
e
V
F
(V)
Isolation (dB)
I
F
(mA)
Frequency (GHz)
Figure 3.
Capacitance vs Reverse Voltage
Figure 4.
Series Isolation vs Frequency
V
R
(V)
Isolation (dB)
C
T
(pF)
Frequency (GHz)
Figure 5.
Series Resistance vs Reverse Voltage
Figure 6.
Series Isolation vs Frequency
V
R
(V)
Isolation (dB)
R
S
(Ω)
Frequency (GHz)
2
Aeroflex / Metelics, Inc.
www.aeroflex-metelics.com
Revision Date: 05/01/05
Mesa Beam Lead PIN Diodes
Typical Performance,
T
A
= 25 ºC
Figure 7.
Series Resistance vs Forward Cu
Current
Figure 8.
Reverse Recovery Time vs Forward Curr
ery
orward Current
I
F
(mA)
T
rr
(ns)
R
S
(Ω)
I
F
(mA)
Figure 9.
Series Resistance vs Forward Current
Figure 10.
Reverse Recovery Time vs Forward Current
I
F
(mA)
T
rr
(ns)
R
S
(Ω)
I
F
(mA)
Figure 1
1.
Series Resistance vs Forward Current
Figure 1
2.
Reverse Recovery Time vs Forward Current
I
F
(mA)
T
rr
(ns)
R
S
(Ω)
I
F
(mA)
Aeroflex / Metelics, Inc.
www.aeroflex-metelics.com
3
Revision Date: 05/01/05
Mesa Be
a
m Lead PIN Diodes
Outline Drawing
Figure 13.
B11
6.5 [0.165]
4.5 [0.114]
Cathode
0.5 [0.013]
0.2 [0.005]
35.5 [0.901]
32.5 [0.826]
14 [0.356]
10 [0.254]
Back
Dimensions in mils [mm]
11 [0.279]
7 [0.178]
Back View
3.5 [0.089]
1.5 [0.038]
Test Configurations
Figure 14.
BIAS
POWER
SUPPLY
BIAS
POWER
SUPPLY
RF INPUT
.1-18 GHz
BIAS
TEE
INTERCONTINENTAL
MICROWAVE
TEST FIXTURE
MODEL TFP-1034
BIAS
TEE
SCALAR
ANALYZER
DETECTOR
TO
SCALAR
ANALYZER
<1 NSEC
PULSE
GENERATOR
BIAS
TEE
+V
R
OV
OUT
INTERCONTINENTAL
MICROWAVE
TEST FIXTURE
MODEL TFP-1034
BIAS
TEE
SAMPLING
OSCILLO-
SCOPE
10%
0%
T
RR
I
F
INSERTION LOSS AND ISOLATION TESTS
T
RR
TEST CONFIGURATION
Aeroflex / Metelics
Aeroflex Microelectronic Solutions
975 Stewart Drive, Sunnyvale, CA 94085
TEL: 408-737-8181
Fax: 408-733-7645
www.aeroflex-metelics.com
sales@aeroflex-metelics.com
Aeroflex / Metelics, Inc. reserves the right to make changes to any products
and services herein at any time without notice. Consult Aeroflex or an
authorized sales representative to verify that the information in this data
sheet is current before using this product. Aeroflex does not assume any
responsibility or liability arising out of the application or use of any product
or service described herein, except as expressly agreed to in writing by
Aeroflex; nor does the purchase, lease, or use of a product or service from
Aeroflex convey a license under any patent rights, copyrights, trademark
rights, or any other of the intellectual rights of Aeroflex or of third parties.
Copyright 2003 Aeroflex / Metelics. All rights reserved.
attributes represented by these three icons:
solution-minded, performance-driven and customer-focused.
Revision Date: 05/01/05
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