TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
LOW POWER PNP SILICON TRANSISTOR
Qualified per MIL-PRF-19500/177
DEVICES
LEVELS
2N1131
2N1131L
2N1132
2N1132L
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= +25°C
(1)
@ T
C
= +25°C
(2)
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
J
, T
stg
Value
40
50
5.0
600
0.6
2.0
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
°C
TO-39
2N1131, 2N1132
Operating & Storage Junction Temperature Range
NOTES:
1/ Derate linearly 3.43mW/°C for T
A
> +25°C
2/ Derate linearly 11.4mW/°C for T
C
> +25°C
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
Collector- Base Breakdown Voltage
I
C
= 10µAdc
Emitter-Base Cutoff Current
V
EB
= 5.0Vdc
Collector-Emitter Cutoff Current
V
CE
= 50Vdc, R
BE
10 ohms
Collector-Base Cutoff Current
V
CB
= 50Vdc
V
CB
= 30Vdc
Symbol
Min.
Max.
Unit
V
(BR)CEO
V
(BR)CBO
40
Vdc
Vdc
TO-5
2N1131L, 2N1132L
50
100
10
I
EBO
µAdc
mAdc
I
CER
I
CBO
10
1.0
µAdc
T4-LDS-0187 Rev. 1 (101882)
Page 1 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions
ON CHARACTERTICS
(3)
Forward-Current Transfer Ratio
I
C
= 150mAdc, V
CE
= 10Vdc
I
C
= 5.0mAdc, V
CE
= 10Vdc
Collector-Emitter Saturation Voltage
I
C
= 150mAdc, I
B
= 15mAdc
Base-Emitter Saturation Voltage
I
C
= 150mAdc, I
B
= 15mAdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Small-Signal Short-Circuit Forward-Current Transfer Ratio
I
C
= 1.0mAdc, V
CE
= 5.0Vdc, f = 1.0kHz
2N1131, L
2N1132, L
I
C
= 5.0mAdc, V
CE
= 10Vdc, f = 1.0kHz
Small-Signal Open-Circuit Output Admittance
I
C
= 1.0mAdc, V
CE
= 5.0Vdc, f = 1.0kHz
I
C
= 5.0mAdc, V
CE
= 10Vdc, f = 1.0kHz
Small-Signal Short-Circuit Input Impedance
I
C
= 1.0mAdc, V
CE
= 5.0Vdc, f = 1.0kHz
I
C
= 5.0mAdc, V
CE
= 10Vdc, f = 1.0kHz
Magnitude of Common Emitter Small-Signal Short Circuit
Forward-Current Transfer Ratio
I
C
= 50mAdc, V
CE
= 10Vdc, f = 20MHz
2N1131, L
2N1132, L
Output Capacitance
V
CB
= 10Vdc, I
E
= 0, 100 kHz
f
1.0MHz
Iutput Capacitance
V
EB
= 0.5Vdc, I
C
= 0, 100 kHz
f
1.0MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time + Turn-Off Time
(See figure 2 of MIL-PRF-177)
(3) Pulse Test: Pulse Width = 300s, Duty Cycle
2.0%
T4-LDS-0187 Rev. 1 (101882)
Page 2 of 3
t
Symbol
Min.
Max.
Unit
2N1131, L
2N1132, L
2N1131, L
2N1132, L
h
FE
20
30
15
25
45
90
V
CE(sat)
V
BE(sat)
1.3
Vdc
Vdc
1.5
Symbol
Min.
15
30
Max.
50
90
Unit
2N1131, L
2N1132, L
h
fe
20
30
1.0
5.0
25
35
10
h
ob
µmho
h
ib
Ω
|h
fe
|
2.5
3.0
20
20
4.5
80
pF
pF
C
obo
C
ibo
Symbol
on +
t
off
Min.
Max.
50
Unit
s
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Dimensions
Inches
Millimeters
Min Max
Min
Max
.305 .335
7.75
8.51
.240 .260
6.10
6.60
.335 .370
8.51
9.40
.200 TP
5.08 TP
.016 .021
0.41
0.53
.500 .750 12.70 19.05
.016 .019
0.41
0.48
.050
1.27
.250
6.35
.100
2.54
.050
1.27
.029 .045
0.74
1.14
.028 .034
0.71
0.86
.010
0.25
45 TP
45 TP
Symbol
CD
CH
HD
LC
LD
LL
LU
L
1
L
2
P
Q
TL
TW
r
Note
6
7, 8
7, 8, 12
7, 8
7, 8
7, 8
5
4
3
10
6
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 inch (0.18
mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be
measured by direct methods or by gauging procedure.
8. Dimension LU applies between L
1
and L
2
. Dimension LD applies between L
2
and LL minimum. Diameter is
uncontrolled in and beyond LL minimum.
9. All three leads.
10. The collector shall be internally connected to the case.
11. Dimension r (radius) applies to both inside corners of tab.
12. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
14. * For L-suffix or non-S-suffix devices (TO-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm)
max. For non-L suffix types (TO-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max..
* FIGURE 1.
Physical dimensions 2N1131 and 2N1132 ( TO-39), 2N1131L and 2N1132L (TO-5).
T4-LDS-0187 Rev. 1 (101882)
Page 3 of 3
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