K4S51163PF-Y(P)F
8M x 16Bit x 4 Banks Mobile-SDRAM
FEATURES
1.8V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system
clock.
• Burst read single-bit write operation.
• Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
-. DS (Driver Strength)
• DQM for masking.
• Auto refresh.
• 64ms refresh period (8K cycle).
• Commercial Temperature Operation (-25°C ~ 70°C).
• 1 /CS Support.
• 2Chips DDP 54Balls FBGA( -YXXX -Pb, -PXXX -Pb Free).
•
•
•
•
Mobile-SDRAM
GENERAL DESCRIPTION
The K4S51163PF is 536,870,912 bits synchronous high data
rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits,
fabricated with SAMSUNG’s high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock and I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst lengths and programmable latencies allow the same
device to be useful for a variety of high bandwidth and high per-
formance memory system applications.
ORDERING INFORMATION
Part No.
K4S51163PF-Y(P)F75
K4S51163PF-Y(P)F90
K4S51163PF-Y(P)F1L
Max Freq.
133MHz(CL=3),83MHz(CL=2)
111MHz(CL=3),83MHz(CL=2)
111MHz(CL=3)*1,66MHz(CL=2)
LVCMOS
54 FBGA Pb
(Pb Free)
Interface
Package
- F : Low Power, Commercial Temperature(-25°C ~ 70°C)
Notes :
1. In case of 40MHz Frequency, CL1 can be supported.
2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.
Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific
purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.
Address configuration
Organization
32M x16
Bank
BA0,BA1
Row
A0 - A12
Column Address
A0 - A9
1
September 2004
K4S51163PF-Y(P)F
FUNCTIONAL BLOCK DIAGRAM
Mobile-SDRAM
I/O Control
LWE
Data Input Register
Bank Select
LDQM
8M x 16
Sense AMP
8M x 16
8M x 16
8M x 16
Refresh Counter
Output Buffer
Row Decoder
Row Buffer
DQi
Address Register
LRAS
CLK
CKE
CLK
ADD
Column Decoder
Col. Buffer
LRAS
LCBR
Latency & Burst Length
LCKE
LCBR
LWE
LCAS
Programming Register
LWCBR
LDQM
Timing Register
CS
RAS
CAS
WE
L(U)DQM
2
September 2004
K4S51163PF-Y(P)F
Package Dimension and Pin Configuration
< Bottom View
*1
>
E
1
9
A
B
C
D
1
D
E
F
G
H
J
E
E/2
Pin Name
D/2
D
e
A
B
C
D
E
F
G
H
J
8
7
6
5
4
3
2
1
1
VSS
DQ14
DQ12
DQ10
DQ8
UDQM
A12
A8
VSS
Mobile-SDRAM
< Top View
*2
>
54Ball(6x9) FBGA
2
DQ15
DQ13
DQ11
DQ9
NC
CLK
A11
A7
A5
3
VSSQ
VDDQ
VSSQ
VDDQ
VSS
CKE
A9
A6
A4
7
VDDQ
VSSQ
VDDQ
VSSQ
VDD
CAS
BA0
A0
A3
8
DQ0
DQ2
DQ4
DQ6
LDQM
RAS
BA1
A1
A2
9
VDD
DQ1
DQ3
DQ5
DQ7
WE
CS
A10
VDD
Pin Function
System Clock
Chip Select
Clock Enable
Address
Bank Select Address
Row Address Strobe
Column Address Strobe
Write Enable
Data Input/Output Mask
Data Input/Output
Power Supply/Ground
Data Output Power/Ground
[Unit:mm]
*2: Top View
CLK
CS
CKE
A
0
~ A
12
A
A1
BA
0
~ BA
1
RAS
CAS
WE
L(U)DQM
Substrate(2Layer)
b
z
*1: Bottom View
< Top View
*2
>
#A1 Ball Origin Indicator
DQ
0
~
15
V
DD
/V
SS
V
DDQ
/V
SSQ
SEC
Week
XXXX
3
K4S51163PF
Symbol
A
A
1
E
E
1
D
D
1
e
b
z
Min
1.00
0.27
-
-
-
-
-
0.45
-
Typ
1.10
0.32
11.5
6.40
10.0
6.40
0.80
0.50
-
Max
1.20
0.37
-
-
-
-
-
0.55
0.10
September 2004
K4S51163PF-Y(P)F
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to V
ss
Voltage on V
DD
supply relative to V
ss
Storage temperature
Power dissipation
Short circuit current
Symbol
V
IN
, V
OUT
V
DD
, V
DDQ
T
STG
P
D
I
OS
Value
-1.0 ~ 2.6
-1.0 ~ 2.6
Mobile-SDRAM
Unit
V
V
°C
W
mA
-55 ~ +150
1.0
50
NOTES:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= -25 to 70°C for Commercial)
Parameter
Supply voltage
V
DDQ
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
V
IH
V
IL
V
OH
V
OL
ILI
1.7
0.8 x V
DDQ
-0.3
V
DDQ
-0.2
-
-2
1.8
1.8
0
-
-
-
1.95
V
DDQ
+ 0.3
0.3
-
0.2
2
V
V
V
V
V
uA
1
2
I
OH
= -0.1mA
I
OL
= 0.1mA
3
Symbol
V
DD
Min
1.7
Typ
1.8
Max
1.95
Unit
V
Note
NOTES :
1. VIH (max) = 2.2V AC.The overshoot voltage duration is
≤
3ns.
2. VIL (min) = -1.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
VIN
≤
VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.
4. Dout is disabled, 0V
≤
VOUT
≤
VDDQ.
CAPACITANCE
(V
DD
= 1.8V, T
A
= 23°C, f = 1MHz, V
REF
=0.9V
±
50 mV)
Pin
Clock
RAS, CAS, WE, CS, CKE
DQM
Address
DQ
0
~ DQ
15
Symbol
C
CLK
C
IN
C
IN
C
ADD
C
OUT
Min
3.0
3.0
1.5
3.0
3.0
Max
6.0
6.0
3.0
6.0
5.0
Unit
pF
pF
pF
pF
pF
Note
4
September 2004
K4S51163PF-Y(P)F
DC CHARACTERISTICS
Mobile-SDRAM
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= -25 to 70°C for Commercial)
Version
Parameter
Symbol
Test Condition
-75
Operating Current
(One Bank Active)
Precharge Standby Current in
power-down mode
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
CKE
≤
V
IL
(max), t
CC
= 10ns
-90
-1L
Unit
Note
I
CC1
100
90
80
mA
1
I
CC2
P
0.6
mA
0.6
20
mA
2
10
mA
2
40
mA
I
CC2
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
Precharge Standby Current
in non power-down mode
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
I
CC2
NS
Input signals are stable
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 10ns
Active Standby Current
in power-down mode
I
CC3
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
I
O
= 0 mA
Page burst
4Banks Activated
t
CCD
= 2CLKs
t
ARFC
≥
t
ARFC
(min)
TCSR Range
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3
NS
10
mA
Operating Current
(Burst Mode)
I
CC
4
150
120
120
mA
1
Refresh Current
I
CC
5
170
Max 40
400
320
280
170
170
Max 70
900
600
500
mA
°C
Self Refresh Current
I
CC
6
CKE
≤
0.2V
Full Array
1/2 of Full Array
1/4 of Full Array
uA
NOTES:
1. Measured with outputs open.
2. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
5
September 2004
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