HY62KF08401C Series
512Kx8bit full CMOS SRAM
Document Title
512K x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM
Revision History
Revision No
History
Draft Date
Remark
00
Initial Draft
Mar.21.2001
Final
01
Changed Isb1 values
Jun.07.2001
Final
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev.01 / Jun.01
Hynix Semiconductor
HY62KF08401C Series
DESCRIPTION
The HY62KF08401C is a high speed, super low
power and 4Mbit full CMOS SRAM organized as
512K words by 8bits. The HY62KF08401C uses
high performance full CMOS process technology
and is designed for high speed and low power
circuit technology. It is particularly well-suited for
the high density low power system application.
This device has a data retention mode that
guarantees data to remain valid at a minimum
power supply voltage of 1.2V.
FEATURES
•
Fully static operation and Tri-state output
•
TTL compatible inputs and outputs
•
Battery backup
-. 1.2V(min) data retention
•
Standard pin configuration
-. 32 - sTSOP - 8X13.4(Standard)
Product No.
HY62KF08401C-I
Voltage
(V)
2.7~3.6
Speed (ns)
55/70
Operation
Current/Icc(mA)
5
Standby
Current(uA)
LL
SL
15
6
Temperature
(°C)
-40~85
Note 1. I : Industrial
2. Current value is max.
PIN CONNECTION
A11
A9
A8
A13
/WE
A18
A15
VCC
A17
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
/OE
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
A0
BLOCK DIAGRAM
ROW
DECODER
I/O1
SENSE AMP
COLUMN
DECODER
ADD INPUT
BUFFER
PRE DECODER
DATA I/O
BUFFER
MEMORY ARRAY
512K x 8
WRITE DRIVER
BLOCK
DECODER
A18
I/O8
32-sTSOP Forward
/CS
/OE
/WE
PIN DESCRIPTION
Pin Name
/CS
/WE
/OE
A0 ~ A18
Pin Function
Chip Select
Write Enable
Output Enable
Address Input
Pin Name
I/O1 ~ I/O8
Vcc
Vss
Pin Function
Data Input/Output
Power (2.7~3.6V)
Ground
Rev.01 / Jun.01
2
HY62KF08401C Series
ORDERING INFORMATION
Part No.
HY62KF08401C-DS(I)
HY62KF08401C-SS(I)
Note 1. I : Industrial
Speed
55/70
55/70
Power
LL-part
SL-part
Temp
.
I
I
Package
sTSOP
sTSOP
ABSOLUTE MAXIMUM RATINGS (1)
Symbol
V
IN,
V
OUT
Vcc
T
A
T
STG
P
D
T
SOLDER
Parameter
Input/Output Voltage
Power Supply
Operating Temperature
Storage Temperature
Power Dissipation
Ball Soldering Temperature & Time
Rating
-0.3 to 3.6
-0.3 to 4.6
-40 to 85
-55 to 150
1.0
260
•
10
Unit
V
V
°C
°C
W
°C•sec
Remark
HY62KF08401C-I
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
/CS
H
L
/WE
X
H
L
/OE
X
H
L
X
MODE
Deselected
Output Disabled
Read
Write
I/O OPERATION
High-Z
High-Z
Dout
Din
Supply Current
Standby
Active
Active
Note:
1. H=V
IH
, L=V
IL
, X=don't care (V
IL or
V
IH
)
Rev.01 / Jun.01
2
HY62KF08401C Series
RECOMMENDED DC OPERATING CONDITION
Symbol
Vcc
Vss
V
IH
V
IL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
2.7
0
2.2
-0.3
1.
Typ
3.0 or 3.3
0
-
-
Max.
3.6
0
Vcc+0.3
0.6
Unit
V
V
V
V
Note : 1. Undershoot : VIL = -1.5V for pulse width less than 30ns
2. Undershoot is sampled, not 100% tested.
DC ELECTRICAL CHARACTERISTICS
T
A
= -40°C to 85°C
Sym
Parameter
I
LI
Input Leakage Current
I
LO
Icc
Output Leakage Current
Operating Power Supply Current
Test Condition
Vss < V
IN
< Vcc
Vss < V
OUT
< Vcc, /CS = V
IH
or
/
OE
=
V
IH
or /WE = V
IL
/CS = V
IL
,
V
IN
= V
IH
or V
IL,
I
I/O =
0mA
/CS = V
IL,
2.7~3.6V
V
IN
= V
IH
or V
IL,
Cycle Time = Min,
2.7~3.3V
100% Duty, I
I/O =
0mA
/CS < 0.2V
,
V
IN
< 0.2V or V
IN
> Vcc-0.2V
,
Cycle Time = 1us,
100% Duty, I
I/O =
0mA
/CS = V
IH
or V
IN
= V
IH
or V
IL
/CS > Vcc - 0.2V or
LL
V
IN
> Vcc - 0.2V or
SL
V
IN
< Vss + 0.2V
I
OL
= 2.1mA
I
OH =
-1.0mA
Min
-1
-1
Typ
1.
-
-
Max
1
1
5
45
40
Unit
uA
uA
mA
mA
mA
I
CC1
Average Operating Current
5
0.5
15
6
0.4
-
mA
mA
uA
uA
V
V
I
SB
I
SB1
V
OL
V
OH
Standby Current
(TTL Input)
Standby Current
(CMOS Input)
Output Low
Output High
0.2
-
2.4
0.2
-
-
Note
1. Typical values are at Vcc = 3.0V T
A
= 25°C
2. Typical values are not 100% tested
CAPACITANCE
(Temp = 25°C, f= 1.0MHz)
Symbol
Parameter
C
IN
Input Capacitance (Add, /CS, /WE, /OE)
C
OUT
Output Capacitance (I/O)
Note : These parameters are sampled and not 100% tested
Condition
V
IN
= 0V
V
I/O
= 0V
Max.
8
10
Unit
pF
pF
Rev.01 / Jun.01
3
HY62KF08401C Series
AC CHARACTERISTICS
T
A
= -40°C to 85°C, unless otherwise specified
#
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
Symbol
Parameter
55ns
Min. Max.
55
-
-
-
10
5
0
0
10
55
50
50
0
45
0
0
25
0
5
-
55
55
30
-
-
30
30
-
-
-
-
-
-
-
20
-
-
-
70ns
Min. Max.
70
-
-
-
10
5
0
0
10
70
60
60
0
50
0
0
30
0
5
-
70
70
35
-
-
30
30
-
-
-
-
-
-
-
20
-
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
READ CYCLE
tRC
Read Cycle Time
tAA
Address Access Time
tACS
Chip Select Access Time
tOE
Output Enable to Output Valid
tCLZ
Chip Select to Output in Low Z
tOLZ
Output Enable to Output in Low Z
tCHZ
Chip Deselection to Output in High Z
tOHZ
Out Disable to Output in High Z
tOH
Output Hold from Address Change
WRITE CYCLE
tWC
Write Cycle Time
tCW
Chip Selection to End of Write
tAW
Address Valid to End of Write
tAS
Address Set-up Time
tWP
Write Pulse Width
tWR
Write Recovery Time
tWHZ
Write to Output in High Z
tDW
Data to Write Time Overlap
tDH
Data Hold from Write Time
tOW
Output Active from End of Write
AC TEST CONDITIONS
T
A
= -40°C to 85°C, unless otherwise specified
Parameter
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Level
Output Load tCLZ, tOLZ, tCHZ, tOHZ, tWHZ, tOW
Others
Value
0.4V to 2.2V
5ns
1.5V
CL = 5pF + 1TTL Load
CL = 30pF + 1TTL Load
AC TEST LOADS
V
TM
=2.8V
1029 Ohm
D
OUT
CL(1)
1728 Ohm
Note
1. Including jig and scope capacitance
Rev.01 / Jun.01
4
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