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Datasheet> 器件分类 > 分立半导体> 二极管> RS1K-HE3
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RS1K-HE3

产品描述DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode
产品类别分立半导体    二极管   
文件大小343KB，共4页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准  
下载文档 详细参数 选型对比 全文预览

RS1K-HE3概述

DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode

RS1K-HE3规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Vishay(威世)
零件包装代码DO-214AC
包装说明R-PDSO-C2
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性FREE WHEELING DIODE, HIGH RELIABILITY
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.3 V
JEDEC-95代码DO-214AC
JESD-30 代码R-PDSO-C2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值正向电流30 A
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流1 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度（摄氏度）260
认证状态Not Qualified
最大重复峰值反向电压800 V
最大反向恢复时间0.5 µs
表面贴装YES
端子面层Matte Tin (Sn)
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间40

RS1K-HE3文档预览

RS1A thru RS1K
Vishay General Semiconductor
Surface Mount Fast Switching Rectifier
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
j
max.
1.0 A
50 V to 800 V
30 A
150 ns, 250 ns, 500 ns
1.3 V
150 °C
DO-214AC (SMA)
Features
•
•
•
•
•
•
•
Low profile package
Ideal for automated placement
Glass passivated chip junction
Fast switching for high efficiency
High forward surge capability
Meets MSL level 1, per J-STD-020C
Solder Dip 260 °C, 40 seconds
Mechanical Data
Case:
DO-214AC (SMA)
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes cathode end
Typical Applications
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive and Telecommunication
Maximum Ratings
(T
A
= 25 °C unless otherwise noted)
Parameter
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
L
= 90 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
Symbols
RS1A RS1B RS1D RS1G RS1J
RA
50
35
50
RB
100
70
100
RD
200
140
200
1.0
30
- 55 to + 150
RG
400
280
400
RJ
600
420
600
RS1K
RK
800
500
800
V
V
V
A
A
°C
Units
Document Number 88707
11-Aug-05
www.vishay.com
1
RS1A thru RS1K
Vishay General Semiconductor
Electrical Characteristics
(T
A
= 25 °C unless otherwise noted)
Parameter
Maximum instantaneous forward
voltage
Maximum DC reverse current at rated
DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
Test condition
at 1.0 A
T
A
= 25 °C
T
A
= 125 °C
at I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
at 4.0 V, 1 MHz
Symbols
V
F
I
R
t
rr
C
J
150
10
RS1A RS1B RS1D RS1G RS1J
1.3
5.0
50
250
7.0
500
RS1K
Units
V
µA
ns
pF
Thermal Characteristics
(T
A
= 25 °C unless otherwise noted)
Parameter
Typical thermal resistance
(1)
Notes:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B.
with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
Symbols
R
θJA
R
θJL
RS1A RS1B RS1D RS1G RS1J
105
32
RS1K
Units
°C/W
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise noted)
1.2
50
Resistive or Inductive Load
1.0
Average Forward Rectified Current (A)
Peak Forward Surge Current (A)
T
L
= 90 °C
8.3
ms Single Half Sine-Wave
40
30
0.5
20
10
P.C.B. Mounted on 0.2 x 0.2” (5.0 x 5.0 mm)
Copper Pad Areas
0
0
20
40
60
80
100
120 140
160 180
0
1
10
100
Lead Temperature (°C)
Number
of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 88707
11-Aug-05
RS1A thru RS1K
Vishay General Semiconductor
30
30
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50mVp-p
10
Instantaneous Forward Current (A)
10
T
J
= 125 °C
1
T
J
= 25 °C
Junction Capacitance (pF)
RS1A-RS1G
RS1J-RS1K
0.1
Pulse
Width
= 300
µs
1% Duty Cycle
0.01
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
30
100
Instantaneous Reverse Current (µA)
10
T
J
= 125 °C
1
T
J
= 100 °C
0.1
T
J
= 25 °C
0.01
0
20
40
60
80
100
Transient Thermal Impedance (°C/W)
Mounted on 0.2 x 0.2” (5 x 5mm)
Copper Pad Area
10
1
0.01
0.1
1
10
Percent of Rated Peak Reverse
Voltage
(%)
t, Pulse Duration (sec.)
Figure 4. Typical Reverse Characteristics
Figure 6. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.066 MIN.
(1.68 MIN.)
0.110 (2.79)
0.100 (2.54)
0.074 MAX.
(1.88 MAX.)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 MIN.
(1.52 MIN.)
0.208
(5.28) REF
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number 88707
11-Aug-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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RS1K-HE3相似产品对比

RS1K-HE3 RS1K-E3 RS1G-HE3 RS1D-HE3 RS1J-HE3 RS1A-HE3 RS1B-HE3 RS1A-E3
描述 DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode Rectifier Diode, 1 Element, 1A, 800V V(RRM), DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode Rectifier Diode, 1 Element, 1A, 50V V(RRM),
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合
厂商名称 Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世)
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V
最大非重复峰值正向电流 30 A 30 A 30 A 30 A 30 A 30 A 30 A 30 A
元件数量 1 1 1 1 1 1 1 1
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
最大输出电流 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A
最大重复峰值反向电压 800 V 800 V 400 V 200 V 600 V 50 V 100 V 50 V
最大反向恢复时间 0.5 µs 0.5 µs 0.15 µs 0.15 µs 0.25 µs 0.15 µs 0.15 µs 0.15 µs
表面贴装 YES YES YES YES YES YES YES YES
是否无铅 不含铅 - 不含铅 不含铅 不含铅 不含铅 不含铅 -
零件包装代码 DO-214AC - DO-214AC DO-214AC DO-214AC DO-214AC DO-214AC -
包装说明 R-PDSO-C2 - R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 -
针数 2 - 2 2 2 2 2 -
其他特性 FREE WHEELING DIODE, HIGH RELIABILITY - FREE WHEELING DIODE, HIGH RELIABILITY FREE WHEELING DIODE, HIGH RELIABILITY FREE WHEELING DIODE, HIGH RELIABILITY FREE WHEELING DIODE, HIGH RELIABILITY FREE WHEELING DIODE, HIGH RELIABILITY -
二极管元件材料 SILICON - SILICON SILICON SILICON SILICON SILICON -
JEDEC-95代码 DO-214AC - DO-214AC DO-214AC DO-214AC DO-214AC DO-214AC -
JESD-30 代码 R-PDSO-C2 - R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 -
JESD-609代码 e3 - e3 e3 e3 e3 e3 -
湿度敏感等级 1 - 1 1 1 1 1 -
端子数量 2 - 2 2 2 2 2 -
最低工作温度 -55 °C - -55 °C -55 °C -55 °C -55 °C -55 °C -
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
封装形状 RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
封装形式 SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE -
峰值回流温度（摄氏度） 260 - 260 260 260 260 260 -
认证状态 Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
端子面层 Matte Tin (Sn) - Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) -
端子形式 C BEND - C BEND C BEND C BEND C BEND C BEND -
端子位置 DUAL - DUAL DUAL DUAL DUAL DUAL -
处于峰值回流温度下的最长时间 40 - 40 40 40 40 40 -

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