JMnic
Product Specification
Silicon NPN Power Transistors
2SC1116
DESCRIPTION
・With
TO-3 package
・Wide
area of safe operation
APPLICATIONS
・For
audio and general purpose
applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
180
120
6
10
100
150
-55~150
UNIT
V
V
V
A
W
℃
℃
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC1116
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=25mA ;I
B
=0
120
V
V
(BR)CBO
V
(BR)EBO
Collector-base breakdown voltage
I
C
=1mA ;I
E
=0
I
E
=1mA ;I
C
=0
180
V
Emitter-base breakdown voltage
6
V
V
CEsat
Collector-emitter saturation voltage
I
C
=5A; I
B
=0.5A
2.0
V
I
CBO
Collector cut-off current
V
CB
=180V; I
E
=0
0.1
mA
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
0.1
mA
h
FE
DC current gain
I
C
=3A ; V
CE
=4V
50
f
T
Transition frequency
I
C
=1A ; V
CE
=12V
10
MHz
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1116
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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