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70V3399S133BFG8: 产品描述Application Specific SRAM, 128KX18, 4.2ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, GREEN, FPBGA-208; 产品类别存储存储; 文件大小231KB，共23页; 制造商IDT (Integrated Device Technology); 标准

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70V3399S133BFG8概述

Application Specific SRAM, 128KX18, 4.2ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, GREEN, FPBGA-208

70V3399S133BFG8规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	IDT (Integrated Device Technology)
包装说明	BGA, BGA208,17X17,32
Reach Compliance Code	compliant
ECCN代码	3A991.B.2.A
最长访问时间	4.2 ns
其他特性	PIPELINED OR FLOW-THROUGH ARCHITECTURE
最大时钟频率 (fCLK)	133 MHz
I/O 类型	COMMON
JESD-30 代码	S-PBGA-B208
JESD-609代码	e1
内存密度	2359296 bit
内存集成电路类型	APPLICATION SPECIFIC SRAM
内存宽度	18
湿度敏感等级	3
功能数量	1
端口数量	2
端子数量	208
字数	131072 words
字数代码	128000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	128KX18
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	BGA
封装等效代码	BGA208,17X17,32
封装形状	SQUARE
封装形式	GRID ARRAY
并行/串行	PARALLEL
峰值回流温度（摄氏度）	260
电源	2.5/3.3,3.3 V
认证状态	Not Qualified
最大待机电流	0.03 A
最小待机电流	3.15 V
最大压摆率	0.4 mA
最大供电电压 (Vsup)	3.45 V
最小供电电压 (Vsup)	3.15 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式	BALL
端子节距	0.8 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	30

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HIGH-SPEED 3.3V

256/128K x 18

IDT70V3319/99S

SYNCHRONOUS

DUAL-PORT STATIC RAM

WITH 3.3V OR 2.5V INTERFACE

Features:

◆

True Dual-Port memory cells which allow simultaneous

access of the same memory location

High-speed data access

– Commercial: 3.6ns (166MHz)/4.2ns (133MHz) (max.)

– Industrial: 4.2ns (133MHz) (max.)

Selectable Pipelined or Flow-Through output mode

– Due to limited pin count PL/

option is not supported

on the 128-pin TQFP package. Device is pipelined

outputs only on each port.

Counter enable and repeat features

Dual chip enables allow for depth expansion without

additional logic

Full synchronous operation on both ports

– 6ns cycle time, 166MHz operation (6Gbps bandwidth)

– Fast 3.6ns clock to data out

– 1.7ns setup to clock and 0.5ns hold on all control, data, and

address inputs @ 166MHz

– Data input, address, byte enable and control registers

◆

– Self-timed write allows fast cycle time

Separate byte controls for multiplexed bus and bus

matching compatibility

Dual Cycle Deselect (DCD) for Pipelined Output mode

LVTTL- compatible, single 3.3V (±150mV) power supply

for core

LVTTL compatible, selectable 3.3V (±150mV) or 2.5V

(±100mV) power supply for I/Os and control signals on

each port

Industrial temperature range (-40°C to +85°C) is

available at 133MHz.

Available in a 128-pin Thin Quad Flatpack, 208-pin fine

pitch Ball Grid Array, and 256-pin Ball

Grid Array

Supports JTAG features compliant to IEEE 1149.1

– Due to limited pin count, JTAG is not supported on the

128-pin TQFP package

Green parts available, see ordering information

Functional Block Diagram

FT/PIPE

1/0

0a 1a

0b 1b

1b 0b

1a 0a

1/0

FT/PIPE

R/W

1/0

B B

1 0

R R

1/0

R/W

Dout0-8_L

Dout9-17_L

Dout0-8_R

Dout9-17_R

1b 0b 1a 0a

0a 1a 0b 1b

0/1

FT/PIPE

0/1

256K x 18

MEMORY

ARRAY

I/O

- I/O

17L

Din_L

Din_R

I/O

- I/O

17R

CLK

17L(1)

REPEAT

ADS

CNTEN

CLK

17R(1)

Counter/

Address

Reg.

ADDR_L

ADDR_R

Counter/

Address

Reg.

REPEAT

ADS

CNTEN

5623 tbl 01

NOTE:

1. A

is a NC for IDT70V3399.

TDI

JTAG

TDO

TCK

TMS

TRST

OCTOBER 2014

DSC

5623/10

70V3399S133BFG8相似产品对比

	70V3399S133BFG8	70V3399S166BCG8	70V3399S133BCG8	70V3399S166PRFG8
描述	Application Specific SRAM, 128KX18, 4.2ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, GREEN, FPBGA-208	Application Specific SRAM, 128KX18, 4ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256	Application Specific SRAM, 128KX18, 4.2ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256	Application Specific SRAM, 128KX18, 4ns, CMOS, PQFP128, 14 X 20 MM, 1.40 MM HEIGHT, GREEN, TQFP-128
是否无铅	不含铅	不含铅	不含铅	不含铅
是否Rohs认证	符合	符合	符合	符合
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
包装说明	BGA, BGA208,17X17,32	BGA, BGA256,16X16,40	BGA, BGA256,16X16,40	QFP, QFP128,.63X.87
Reach Compliance Code	compliant	compliant	compliant	compliant
最长访问时间	4.2 ns	4 ns	4.2 ns	4 ns
其他特性	PIPELINED OR FLOW-THROUGH ARCHITECTURE	PIPELINED OR FLOW-THROUGH ARCHITECTURE	PIPELINED OR FLOW-THROUGH ARCHITECTURE	PIPELINED OR FLOW-THROUGH ARCHITECTURE
最大时钟频率 (fCLK)	133 MHz	166 MHz	133 MHz	166 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	S-PBGA-B208	S-PBGA-B256	S-PBGA-B256	R-PQFP-G128
JESD-609代码	e1	e1	e1	e3
内存密度	2359296 bit	2359296 bit	2359296 bit	2359296 bit
内存集成电路类型	APPLICATION SPECIFIC SRAM	APPLICATION SPECIFIC SRAM	APPLICATION SPECIFIC SRAM	APPLICATION SPECIFIC SRAM
内存宽度	18	18	18	18
湿度敏感等级	3	3	3	3
功能数量	1	1	1	1
端口数量	2	2	2	2
端子数量	208	256	256	128
字数	131072 words	131072 words	131072 words	131072 words
字数代码	128000	128000	128000	128000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C
组织	128KX18	128KX18	128KX18	128KX18
输出特性	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	BGA	BGA	BGA	QFP
封装等效代码	BGA208,17X17,32	BGA256,16X16,40	BGA256,16X16,40	QFP128,.63X.87
封装形状	SQUARE	SQUARE	SQUARE	RECTANGULAR
封装形式	GRID ARRAY	GRID ARRAY	GRID ARRAY	FLATPACK
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	260	260	260	260
电源	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大待机电流	0.03 A	0.03 A	0.03 A	0.03 A
最小待机电流	3.15 V	3.15 V	3.15 V	3.15 V
最大压摆率	0.4 mA	0.5 mA	0.4 mA	0.5 mA
最大供电电压 (Vsup)	3.45 V	3.45 V	3.45 V	3.45 V
最小供电电压 (Vsup)	3.15 V	3.15 V	3.15 V	3.15 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子面层	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	MATTE TIN
端子形式	BALL	BALL	BALL	GULL WING
端子节距	0.8 mm	1 mm	1 mm	0.635 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	QUAD
处于峰值回流温度下的最长时间	30	30	30	30

70V3399S133BFG8

70V3399S133BFG8概述

70V3399S133BFG8规格参数

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