JMnic
Product Specification
Silicon NPN Power Transistors
2SC1106
DESCRIPTION
・With
TO-3 package
・High
power dissipation
・High
breakdown voltage
APPLICATIONS
・For
voltage regulator ,inverter and switching
mode power supply applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
350
250
6
2
80
150
-55~150
UNIT
V
V
V
A
W
℃
℃
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC1106
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=0.1A ;I
B
=0
250
V
V
(BR)CBO
Collector-base breakdown voltage
I
C
=1mA ;I
E
=0
350
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=1mA ;I
C
=0
6
V
V
CEsat
Collector-emitter saturation voltage
I
C
=1.5A; I
B
=0.3A
5.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=1.5A; I
B
=0.3A
1.5
V
I
CBO
Collector cut-off current
V
CB
=350V; I
E
=0
0.1
mA
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
0.1
mA
h
FE
DC current gain
I
C
=0.2A ; V
CE
=5V
30
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1106
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
测试/测量
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