Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SC1098 2SC1098A
DESCRIPTION
・With
TO-202 package
・High
Voltage
・High
transition frequency
APPLICATIONS
・Audio
frequency power amplifier
・Low
speed switching
・Suitable
for output stages of 5~17W small
stereo sets
PINNING(see Fig.2)
PIN
1
2
3
Base
Collector
Fig.1 simplified outline (TO-202) and symbol
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
PARAMETER
Collector-base voltage
2SC1098
V
CEO
Collector-emitter voltage
2SC1098A
V
EBO
I
C
I
CM
I
B
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
a
=25℃
P
T
Total power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
10
150
-55~150
℃
℃
Open collector
Open base
60
5
3
5
0.6
1.2
W
V
A
A
A
CONDITIONS
Open emitter
VALUE
70
45
V
UNIT
V
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BEsat
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
2SC1098
V
(BR)CEO
Collector-emitter
breakdown voltage
2SC1098A
h
FE-1
h
FE-2
I
CBO
I
EBO
C
OB
f
T
DC current gain
DC current gain
Collector cut-off current
Emitter cut-off current
Output capacitance
Transition frequency
I
C
=20mA ; V
CE
=5V
I
C
=0.5A ; V
CE
=5V
V
CB
=45V ;I
E
=0
V
EB
=3V; I
C
=0
I
E
=0; V
CB
=10V;f=1MHz
I
C
=0.1A ; V
CE
=5V
I
C
=10mA; I
B
=0
CONDITIONS
I
C
=1.5A; I
B
=0.15 A
I
C
=1.5A; I
B
=0.15 A
2SC1098 2SC1098A
MIN
TYP.
MAX
2.0
2.0
UNIT
V
V
45
V
60
20
40
250
1.0
1.0
40
60
μA
μA
pF
MHz
h
FE-2
Classifications
N
40-60
M
50-100
L
80-160
K
120-250
2
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