Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SC1050
DESCRIPTION
・With
TO-3 package
・High
breakdown voltage
APPLICATIONS
・For
use in audio and general
purpose applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
mb
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
300
300
6
1
40
150
-55~150
UNIT
V
V
V
A
W
℃
℃
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SC1050
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=0.1A ; I
B
=0
300
V
V
CEsat
Collector-emitter saturation voltage
I
C
=0.5A; I
B
=0.1A
1.2
V
V
BEsat
Base-emitter saturation voltage
I
C
=0.5A; I
B
=0.1A
1.5
V
I
CBO
Collector cut-off current
V
CB
=300V; I
E
=0
0.1
mA
I
CEO
Collector cut-off current
V
CE
=300V; I
B
=0
0.5
mA
I
EBO
Emitter cut-off current
V
EB
=6V; I
C
=0
0.1
mA
h
FE
DC current gain
I
C
=0.3A ; V
CE
=5V
30
200
2