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SSR4045DMDBTXV

产品描述Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 45V V(RRM), Silicon, HERMETIC SEALED, TO-254, 3 PIN
产品类别分立半导体    二极管   
文件大小52KB,共2页
制造商SSDI
官网地址http://www.ssdi-power.com/
下载文档 详细参数 全文预览

SSR4045DMDBTXV概述

Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 45V V(RRM), Silicon, HERMETIC SEALED, TO-254, 3 PIN

SSR4045DMDBTXV规格参数

参数名称属性值
厂商名称SSDI
零件包装代码TO-254
包装说明HERMETIC SEALED, TO-254, 3 PIN
针数3
Reach Compliance Codecompliant
ECCN代码EAR99
应用GENERAL PURPOSE
外壳连接ISOLATED
配置SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.5 V
JESD-30 代码S-MSFM-P3
最大非重复峰值正向电流600 A
元件数量2
相数1
端子数量3
最高工作温度175 °C
最大输出电流40 A
封装主体材料METAL
封装形状SQUARE
封装形式FLANGE MOUNT
认证状态Not Qualified
最大重复峰值反向电压45 V
表面贴装NO
技术SCHOTTKY
端子形式PIN/PEG
端子位置SINGLE

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SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SSR4045CTM
SSR4045CTZ
40 AMP
45VOLTS
POSITIVE CENTERTAP
SCHOTTKY
RECTIFIER
TO-254
TO-254Z
Designer's Data Sheet
Part Number /Ordering Information
SSR4045 CT M
TX
1/
Screening
2/
:
_ = Not Screened
TX = TX Level
TXV = TXV Level
S
= Space Level
Lead Bend:
_ = Straight
UB = Up Bend
DB = Down Bend
Package:
M = TO-254
Z
= TO-254Z
Configuration:
CT = Common Cathode
CA = Common Anode
D = Doubler
NOTES:
1/ For Ordering Information, Price, and Availability Contact
Factory.
2/ Screening per MIL-PRF-19500.
3/ Both Legs Tied Together. For Doubler Configuration, Value Shall
Be Half of the Value Shown, Tested per Leg.
4/ Both Legs Tied Together. For Doubler Configuration, Tested
Both Dies in Series.
5/ Per Leg
FEATURES:
Low Reverse Leakage
Low Forward Voltage Drop
Guard Ring for Overvoltage Protection
Isolated Hermetically Sealed Power Package
Available in Glass or Ceramic Seal Packages
Eutectic Die Attach
175
o
C Operating Temperature
TX, TXV and Space Level Screening
Available
Maximum Ratings
Peak Repetitive Reverse and
DC Blocking Voltage
Average Rectified Forward Current
(Resistive load, 60Hz, Sine Wave, T
C
= 55
o
C) 3/
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, T
A
= 25
o
C) 3/
Operating and Storage Temperature
Maximum Thermal Resistance
Junction to Case 4/
Junction to Case 5/
SYMBOL
V
RRM
V
RWM
V
R
Io
I
FSM
T
OP
& Tstg
R
Θ
JC
VALUE
45
UNITS
Volts
40
600
-65 TO +175
0.9
1.8
Amps
Amps
o
C
o
C/W
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET # : RS0031C

 
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