Quad Low-Capacitance Array With +/-15-kV ESD Protection 5-SOT-5X3 -40 to 85
参数名称 | 属性值 |
Brand Name | Texas Instruments |
是否无铅 | 不含铅 |
是否Rohs认证 | 符合 |
厂商名称 | Texas Instruments(德州仪器) |
包装说明 | PACKAGE-5 |
针数 | 5 |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
Factory Lead Time | 6 weeks |
Samacsys Confidence | |
Samacsys Status | Released |
Samacsys PartID | 607614 |
Samacsys Pin Count | 5 |
Samacsys Part Category | Integrated Circuit |
Samacsys Package Category | Other |
Samacsys Footprint Name | SOT50P160X60-5N |
Samacsys Released Date | 2017-01-12 12:59:53 |
Is Samacsys | N |
最大击穿电压 | 7.2 V |
最小击穿电压 | 6.1 V |
击穿电压标称值 | 6.65 V |
配置 | COMMON ANODE, 4 ELEMENTS |
二极管元件材料 | SILICON |
二极管类型 | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 代码 | R-PDSO-N5 |
JESD-609代码 | e4 |
湿度敏感等级 | 1 |
元件数量 | 4 |
端子数量 | 5 |
最高工作温度 | 85 °C |
最低工作温度 | -40 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
峰值回流温度(摄氏度) | 260 |
极性 | UNIDIRECTIONAL |
认证状态 | Not Qualified |
最大重复峰值反向电压 | 5 V |
表面贴装 | YES |
技术 | ZENER |
端子面层 | Nickel/Palladium/Gold (Ni/Pd/Au) |
端子形式 | NO LEAD |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
Base Number Matches | 1 |
TPD4E002DRL2 | TPD4E002DRLR | TPD4E002DRLRG4 | |
---|---|---|---|
描述 | Quad Low-Capacitance Array With +/-15-kV ESD Protection 5-SOT-5X3 -40 to 85 | Quad Low-Capacitance Array With +/-15-kV ESD Protection 5-SOT-5X3 -40 to 85 | Quad Low-Capacitance Array With +/-15-kV ESD Protection 5-SOT-5X3 -40 to 85 |
Brand Name | Texas Instruments | Texas Instruments | Texas Instruments |
是否Rohs认证 | 符合 | 符合 | 符合 |
厂商名称 | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) |
包装说明 | PACKAGE-5 | PACKAGE-5 | R-PDSO-F5 |
针数 | 5 | 5 | 5 |
Reach Compliance Code | compliant | compliant | compli |
ECCN代码 | EAR99 | EAR99 | EAR99 |
最大击穿电压 | 7.2 V | 7.2 V | 7.2 V |
最小击穿电压 | 6.1 V | 6.1 V | 6.1 V |
配置 | COMMON ANODE, 4 ELEMENTS | COMMON ANODE, 4 ELEMENTS | COMMON ANODE, 4 ELEMENTS |
二极管元件材料 | SILICON | SILICON | SILICON |
二极管类型 | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 代码 | R-PDSO-N5 | R-PDSO-N5 | R-PDSO-F5 |
JESD-609代码 | e4 | e4 | e4 |
湿度敏感等级 | 1 | 1 | 1 |
元件数量 | 4 | 4 | 4 |
端子数量 | 5 | 5 | 5 |
最高工作温度 | 85 °C | 85 °C | 85 °C |
最低工作温度 | -40 °C | -40 °C | -40 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
峰值回流温度(摄氏度) | 260 | 260 | 260 |
极性 | UNIDIRECTIONAL | UNIDIRECTIONAL | UNIDIRECTIONAL |
认证状态 | Not Qualified | Not Qualified | Not Qualified |
最大重复峰值反向电压 | 5 V | 5 V | 6.7 V |
表面贴装 | YES | YES | YES |
技术 | ZENER | ZENER | ZENER |
端子面层 | Nickel/Palladium/Gold (Ni/Pd/Au) | Nickel/Palladium/Gold (Ni/Pd/Au) | Nickel/Palladium/Gold (Ni/Pd/Au) |
端子形式 | NO LEAD | NO LEAD | FLAT |
端子位置 | DUAL | DUAL | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
是否无铅 | 不含铅 | 不含铅 | - |
Factory Lead Time | 6 weeks | 1 week | - |
Samacsys Status | Released | Released | - |
Samacsys PartID | 607614 | 182715 | - |
Samacsys Pin Count | 5 | 5 | - |
Samacsys Part Category | Integrated Circuit | Integrated Circuit | - |
Samacsys Package Category | Other | SO Transistor Flat Lead | - |
Samacsys Footprint Name | SOT50P160X60-5N | SN74LVC1G04DRLR | - |
Samacsys Released Date | 2017-01-12 12:59:53 | 2017-01-12 12:59:53 | - |
Is Samacsys | N | N | - |
Base Number Matches | 1 | 1 | - |
器件名 | 厂商 | 描述 |
---|---|---|
TPD4E002DRLR | Texas Instruments(德州仪器) | Quad Low-Capacitance Array With +/-15-kV ESD Protection 5-SOT-5X3 -40 to 85 |
TPD4E002DRLRG4 | Texas Instruments(德州仪器) | Quad Low-Capacitance Array With +/-15-kV ESD Protection 5-SOT-5X3 -40 to 85 |
CM1263-02SE | ON Semiconductor(安森美) | Low Capacitance ESD Protection Array for High-Speed Serial Interfaces, SOT-553, 5 LEAD, 5000-REEL |
TPD4E004DRYRG4 | Texas Instruments(德州仪器) | 4-Channel ESD Protection Array for High-Speed Data Interfaces 6-SON -40 to 85 |
USBLC6-2P6 | ST(意法半导体) | 极性:Unidirectional 峰值脉冲电流(10/1000us):5A 箝位电压:17V 击穿电压(最小值):6V 反向关断电压(典型值):5.25V 二极管阵列 TVS USB2 二极管类型: 单向TVS 钳位电压 最大: 17V 二极管封装形式: SOT-666 针脚数: 6 SVHC(高度关注物质): No SVHC (19-Dec-2012) SMD标号: F TVS 极性: 单向 二极管配置: 单向 击穿电压: 6V 击穿电压 最小: 6V 击穿电压范围: 6V 反向漏电流, 最大: 1μA 器件标记: USBLC6-2P6 封装/箱盒: SOT-666 峰值脉冲电压: 15kV 峰值脉冲电流: 5A 工作温度最小值: -55°C 工作温度最高值: 150°C 截止电压: 5V 最高击穿电压: 6V 电压, Vrwm: 5V 电容值, Cj: 3.5pF 表面安装器件: SMD 钳位电压, 8/20us 最大: 17V |
RCLAMP0502A.TCT | SEMTECH | 箝位电压:18V 击穿电压(最小值):6V 反向关断电压(典型值):5V (Max) 5V,3A,Cj=0.9pF |
RCLAMP0504S.TCT | SEMTECH | 极性:Unidirectional 峰值脉冲电流(10/1000us):6A (8/20us) 箝位电压:25V 击穿电压(最小值):6V 反向关断电压(典型值):5V TVS阵列 |
TPD4E004DRYR | Texas Instruments(德州仪器) | 极性:Unidirectional 峰值脉冲电流(10/1000us):- 箝位电压:- 击穿电压(最小值):6V 反向关断电压(典型值):5.5V (Max) TVSDIODE6SON |
USBULC6-2M6 | ST(意法半导体) | |
NUP4114UPXV6T1G | ON Semiconductor(安森美) | 极性:Unidirectional 峰值脉冲电流(10/1000us):8A (8/20us) 箝位电压:10V 击穿电压(最小值):5.5V 反向关断电压(典型值):5.5V (Max) |
CM1213A-04SO | ON Semiconductor(安森美) | 极性:Unidirectional 峰值脉冲电流(10/1000us):1A (8/20us) 箝位电压:10V (Typ) 击穿电压(最小值):6V 反向关断电压(典型值):3.3V |
RCLAMP0504FATCT | SEMTECH | 极性:Unidirectional 峰值脉冲电流(10/1000us):6A (8/20us) 箝位电压:25V 击穿电压(最小值):6V 反向关断电压(典型值):5V TVS阵列 |
RCLAMP0522P.TCT | SEMTECH | 极性:Unidirectional 箝位电压:15V 击穿电压(最小值):6V 反向关断电压(典型值):5V (Max) 5V,5A,Cj=0.8pF |
DSILC6-4P6 | ST(意法半导体) | ESD Suppressors / TVS Diodes ESD Protection |
CM1213A-04S7 | ON Semiconductor(安森美) | 极性:Unidirectional 峰值脉冲电流(10/1000us):1A (8/20us) 箝位电压:10V (Typ) 击穿电压(最小值):6V 反向关断电压(典型值):3.3V |
RCLAMP1654P.TCT | SEMTECH | 100 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE |
CM1213A-02SO | ON Semiconductor(安森美) | 极性:- 峰值脉冲电流(10/1000us):1A (8/20us) 箝位电压:10V 击穿电压(最小值):6V 反向关断电压(典型值):3.3V |
RCLAMP0503N.TCT | SEMTECH | ESD Suppressors / TVS Diodes Low Capacitance TVS Diode Array |
CDDFN6-0504P | Bourns | ESD Suppressors / TVS Diodes TVS Diode Array 5VOLT |
RCLAMP0522T.TCT | SEMTECH | TVS DIODE 5V 15V SLP1610P4T |
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