JMnic
Product Specification
Silicon NPN Power Transistors
2SC3163
DESCRIPTION
・With
TO-220C package
・High
breakdown voltage
・High
speed switching
・
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
400
7
6
2
50
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction case
MAX
2.5
UNIT
℃/W
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SC3163
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=100mA ; I
B
=0
400
V
V
CEsat
Collector-emitter saturation voltage
I
C
=3A; I
B
=0.3A
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=3A; I
B
=0.3A
1.5
V
I
CEO
Collector cut-off current
V
CE
=400V ;I
B
=0
100
μA
I
CBO
Collector cut-off current
V
CB
=500V ;I
E
=0
100
μA
I
EBO
Emitter cut-off current
V
EB
=7V; I
C
=0
100
μA
h
FE-1
DC current gain
I
C
=3A ; V
CE
=2V
15
h
FE-2
DC current gain
I
C
=6A ; V
CE
=2V
8
f
T
Transition frequency
I
C
=0.6A ; V
CE
=10V
20
MHz
2
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