JMnic
Product Specification
Silicon PNP Darlington Power Transistors
2SB1559
DESCRIPTION
・With
TO-3PN package
・Complement
to type 2SD2389
APPLICATIONS
・Audio
,regulator and general purpose
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-160
-150
-5
-8
-1
80
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Darlington Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
C
ob
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-30mA ;I
B
=0
I
C
=-6A ;I
B
=-6mA
I
C
=-6A ;I
B
=-6mA
V
CB
=-160V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-6A ; V
CE
=-4V
I
E
=0 ; V
CB
=-10V;f=1MHz
I
C
=1A ; V
CE
=-12V
5000
160
65
MIN
-150
TYP.
2SB1559
MAX
UNIT
V
-2.5
-3.0
-100
-100
V
V
μA
μA
pF
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=-6A;R
L
=10Ω
I
B1
=- I
B2
=-6mA
V
CC
=60V
0.7
3.6
0.9
μs
μs
μs
h
FE
Classifications
O
5000-12000
P
6500-20000
Y
15000-30000
2
JMnic
Product Specification
Silicon PNP Darlington Power Transistors
PACKAGE OUTLINE
2SB1559
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
JMnic
Product Specification
Silicon PNP Darlington Power Transistors
2SB1559
4
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