PD-20375A
HFA45HC120C
HEXFRED
Features
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
• Hermetic
• Electrically Isolated
• Ceramic Eyelets
TM
Ultrafast, Soft Recovery Diode
(ISOLATED BASE)
V
R
= 1200V
V
F
= 3.0V
Q
rr
= 675nC
ANODE
COMMON
CATHODE
ANODE
Description
HEXFRED
TM
diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems.
An extensive characterization of the recovery behavior
for different values of current, temperature and di/dt
simplifies the calculations of losses in the operating
conditions. The softness of the recovery eliminates the
need for a snubber in most applications. These devices
are ideally suited for power converters, motors drives and
other applications where switching losses are significant
portion of the total losses.
TO-258AA
Absolute Maximum Ratings (per Leg)
Parameter
V
R
I
F
@ T
C
= 100°C
I
FSM
@ T
C
= 25°C
P
D
@ T
C
= 25°C
T
J
T
STG
D.C. Reverse Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
1200
28
190
104
-55 to +150
Units
V
A
W
°C
Thermal - Mechanical Characteristics
Parameter
R
θJC
Junction-to-Case, Single Leg Conducting
Weight
Typ.
—
10.9
Max.
1.2
—
Units
°C/W
g
Note:
D.C. = 50% rect. wave
1/2 sine wave, 60 Hz , P.W. = 8.33 ms
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1
6/23/99
HFA45HC120C
Electrical Characteristics (per Leg) @ T
J
= 25°C (unless otherwise specified)
Parameter
V
BR
V
FM
Cathode Anode Breakdown Voltage
Max Forward Voltage
Min. Typ. Max. Units
1200 —
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
—
3.0
3.9
2.7
20
2.0
40
—
V
V
µA
mA
pF
nH
Test Conditions
I
R
= 100µA
I
F
= 14A
I
F
= 28A
I
F
= 14A, T
J
= 125°C
V
R
= V
R
Rated
T
J
= 125°C, V
R
= 960V
V
R
= 200V
Measured from center of bond pad to
end of anode bonding wire
I
RM
C
T
L
S
Max Reverse Leakage Current
Junction Capacitance
Series Inductance
Dynamic Recovery Characteristics (per Leg) @ T
J
= 25°C
Parameter
t
rr
I
RRM
Q
RR
Reverse Recovery Time
Max Reverse Recovery Current
Reverse Recovered Charge
Min. Typ. Max. Units
—
—
—
—
—
—
135
10
675
nS
A
nC
Test Conditions
I
F
= 14A, di/dt < 200A/us, V
R
= 200V
I
F
= 14A, di/dt < 200A/us, V
R
= 200V
I
F
= 14A, di/dt < 200A/us, V
R
= 200V
Case Outline and Dimensions — TO-258AA
Conforms to JEDEC Outline TO-258AA
Dimensions in millimeters and (inches)
CAUTION
BERYLLIA WARNING PER MIL- PRF-19500
Package containing beryllia shall not be ground, sandblasted,machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
2
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HFA45HC120C
3
I
F
t
rr
t
a
t
b
4
R E V E R S E R E C O V E R Y C IR C U IT
V
R
= 2 00 V
0
Q
rr
2
I
RRM
0.5 I
R R M
di(re c)M /dt
0.75 I
R R M
5
0.01
Ω
L = 70µH
D .U .T.
D
d if/d t
A D JU S T
G
IR F P 2 50
S
1
di
f
/d t
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
X I
RRM
Q
rr
=
2
1. di
f
/dt - Rate of change of current
through zero crossing
2. I
RRM
- Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
Fig.1
- Reverse Recovery Parameter Test
Circuit
Fig. 2
- Reverse Recovery Waveform and
Definitions
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http://www.irf.com/
Data and specifications subject to change without notice.
6/99
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