SB 1040
SCHOTTKY DIE SPECIFICATION
General Description: 40 V 10 A ( Standard
□Low)
VF，
ELECTRICAL CHARACTERISTICS
DC Blocking Voltage:
Ir=1mA(for wafer form)
Ir=0.5mA (for dice form)
Average Rectified Forward Current
Maximum Instantaneous Forward Voltage
@ 1 Ampere, Ta=25℃
Maximum Instantaneous Reverse Voltage
@ VR= 43 Volt, Ta=25℃
Maximum Junction Capacitance @ 0V, 1MHZ
MAXIMUM RATINGS
Nonrepetitive Peak Surge Current
Operating Junction Temperature
Storage Temperatures
SYM
VRRM
IFAV
VF MAX
TYPE: SB1040
( Single
□Dual)
Anode
Spec. Limit
40
10
0.480
0.450
Die Sort
45
UNIT
Volt
Amp
Volt
IR MAX
Cj MAX
IFSM
Tj
TSTG
0.300
0.250
mA
pF
260
125
-50 to +150
Amp
℃
℃
Specification apply to die only. Actual performance may degrade when assembled.
We do not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.
DICE OUTLINE DRAWING
DIM
A
B
C
B
Top-side Metal
S
i
O
2
Passivation
A
ITEM
Die Size
Top Metal Pad Size
Thickness (Min)
Thickness (Max)
μm
2565
2438
203
254
Mil
100.98
95.98
8
10
PS:
(1)Cutting street width is around 50μm (1.96mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.
P+ Guard Ring
Back-side Metal
C
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