JMnic
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-3PFa package
・Complement
to type 2SD2064
・High
transition frequency
・Satisfactory
linearity of h
FE
APPLICATIONS
・For
high power amplification
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
2SB1371
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
3
150
-55~150
℃
℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-120
-120
-5
-6
-10
70
W
UNIT
V
V
V
A
A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE -2
h
FE -3
C
OB
f
T
PARAMETER
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-4A ;I
B
=-0.4A
I
C
=-4A ; V
CE
=-5V
V
CB
=-120V; I
E
=0
V
EB
=-3V; I
C
=0
I
C
=-20mA ; V
CE
=-5V
I
C
=-1A ; V
CE
=-5V
I
C
=-4A ; V
CE
=-5V
I
E
=0 ; V
CB
=-10V;f=1.0MHz
I
C
=-0.5A ; V
CE
=-5V;f=1.0MHz
20
60
20
150
15
MIN
2SB1371
TYP.
MAX
-2.0
-1.8
-50
-50
UNIT
V
V
μA
μA
200
pF
MHz
h
FE-2
classifications
Q
60-120
S
80-160
P
100-200
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1371
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SB1371
4
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