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HVD358B-E

产品描述20.25pF, SILICON, VARIABLE CAPACITANCE DIODE, SFP-2
产品类别分立半导体    二极管   
文件大小54KB,共5页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
标准  
下载文档 详细参数 全文预览

HVD358B-E概述

20.25pF, SILICON, VARIABLE CAPACITANCE DIODE, SFP-2

HVD358B-E规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Renesas(瑞萨电子)
包装说明R-PDSO-F2
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
配置SINGLE
二极管电容容差3.7%
最小二极管电容比2.2
标称二极管电容20.25 pF
二极管元件材料SILICON
二极管类型VARIABLE CAPACITANCE DIODE
JESD-30 代码R-PDSO-F2
JESD-609代码e6
湿度敏感等级1
元件数量1
端子数量2
最高工作温度125 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
认证状态Not Qualified
表面贴装YES
端子面层TIN BISMUTH
端子形式FLAT
端子位置DUAL
处于峰值回流温度下的最长时间20

HVD358B-E文档预览

HVD358B
Variable Capacitance Diode for VCO
REJ03G0499-0200
Rev.2.00
Jan 24, 2006
Features
High capacitance ratio. (n = 2.20 min)
Low series resistance. (rs = 0.40
max)
Good C-V linearity.
Super small Flat Lead Package (SFP) is suitable for surface mount design.
Ordering Information
Type No.
HVD358B
Laser Mark
C
Package Name
SFP
Package Code
PUSF0002ZB-A
Pin Arrangement
Cathode mark
Mark
1
C
2
1. Cathode
2. Anode
Rev.2.00 Jan 24, 2006 page 1 of 4
HVD358B
Absolute Maximum Ratings
(Ta = 25°C)
Item
Reverse voltage
Junction temperature
Storage temperature
Symbol
V
R
Tj
Tstg
Value
15
125
−55
to +125
Unit
V
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Reverse current
Capacitance
Capacitance ratio
Series resistance
Symbol
I
R1
I
R2
C
1
C
4
n
r
S
Min
19.5
8.00
2.20
Typ
Max
10
100
21.0
9.30
0.40
Unit
nA
pF
Test Condition
V
R
= 15 V
V
R
= 15 V, Ta = 60°C
V
R
= 1 V, f = 1 MHz
V
R
= 4 V, f = 1 MHz
C
1
/ C
4
V
R
= 1 V, f = 470 MHz
Note: For SFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip part is
considered as unquestioned. Please kindly consider soldering nature.
Rev.2.00 Jan 24, 2006 page 2 of 4
HVD358B
Main Characteristic
10
−8
10
−9
30
f=1MHz
25
Reverse current I
R
(A)
10
−10
10
−11
10
−12
10
−13
10
−14
10
−15
Capacitance C (pF)
0
4
8
12
16
20
20
15
10
5
0
0.1
1.0
Reverse voltage V
R
(V)
10
Reverse voltage V
R
(V)
Fig.1 Reverse current vs. Reverse voltage
Fig.2 Capacitance vs. Reverse voltage
0.4
f=470MHz
0
Series resistance r
S
(Ω)
L
F
=
∆(LogC)/∆(LogV
R
)
10
0.3
-0.5
0.2
-1.0
0.1
0
0.1
1.0
Reverse voltage V
R
(V)
-1.5
0.1
1.0
Reverse voltage V
R
(V)
Fig.4 L
F
vs. Reverse voltage
10
Fig.3 Series resistance vs. Reverse voltage
Rev.2.00 Jan 24, 2006 page 3 of 4
HVD358B
Package Dimensions
Package Name
SFP
JEITA Package Code
RENESAS Code
PUSF0002ZB-A
Previous Code
SFP / SFPV
MASS[Typ.]
0.0010g
D
b
E
H
E
c
A
φ
b
e
1
Reference
Symbol
Dimension in Millimeters
Pattern of terminal position areas
A
b
c
D
E
H
E
φ
b
e
1
Min
0.50
0.25
0.08
0.55
0.90
1.30
Nom
0.30
0.13
0.60
1.00
1.40
0.50
1.40
Max
0.55
0.35
0.18
0.65
1.10
1.50
Rev.2.00 Jan 24, 2006 page 4 of 4
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology (Shanghai) Co.,
Ltd.
Unit 205, AZIA Center, No.133 Yincheng Rd (n), Pudong District, Shanghai 200120, China
Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co.,
Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Bhd
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
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