BD533FP
BD534FP
COMPLEMENTARY SILICON POWER TRANSISTORS
s
s
s
BD534FP IS SGS-THOMSON PREFERRED
SALESTYPE
FULLY MOLDED ISOLATED PACKAGE
2000 V DC ISOLATION (U.L. COMPLIANT)
DESCRIPTION
The BD533FP is silicon epitaxial-base NPN
power transistor in Jedec TO-220FP fully molded
isolated package, intented for use in medium
power linear and switching applications.
The complementary PNP type is BD534FP.
3
1
2
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
NPN
PNP
V
CBO
V
CES
V
CEO
V
EBO
I
C,
I
E
I
B
P
t ot
T
stg
T
j
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector and Emitter Current
Base Current
Total Dissipation at T
c
≤
25 C
o
Value
BD533FP
BD534FP
45
45
45
5
8
1
25
-65 to 150
150
Uni t
V
V
V
V
A
A
W
o
o
Storage Temperature
Max. O perating Junction Temperature
C
C
For PNP types voltage and current values are negative.
April 1998
1/4
BD533FP / BD534FP
THERMAL DATA
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
5.1
70
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symb ol
I
CBO
I
CES
I
EBO
Parameter
Collector Cut-off
Current (I
E
= 0)
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
C
= 0)
Test Cond ition s
V
CB
= 45 V
V
CE
= 45 V
V
EB
= 5 V
I
C
= 100 mA
45
Min.
Typ .
Max.
100
100
1
Un it
µA
µA
mA
V
V
CEO(sus )
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat )
∗
V
BE
∗
h
FE
∗
Collector-Emitter
Saturation Voltage
Base-Emitter Voltage
DC Current G ain
I
C
= 2 A
I
C
= 6 A
I
C
= 2 A
I
C
= 10 mA
I
C
= 500 mA
I
C
= 2 A
I
C
= 500 mA
I
B
= 0.2 A
I
B
= 0.6 A
V
CE
= 2 V
V
CE
= 5 V
V
CE
= 2 V
V
CE
= 2 V
V
CE
= 1 V
20
40
25
3
0.8
0.8
1.5
V
V
V
f
T
Transition frequency
12
MHz
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
For PNP types voltage and current values are negative.
Safe Operating Areas
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BD533FP / BD534FP
TO-220FP MECHANICAL DATA
DIM.
MIN.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L6
L7
Ø
28.6
9.8
15.9
9
3
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
16
30.6
10.6
16.4
9.3
3.2
1.126
0.385
0.626
0.354
0.118
mm
TYP.
MAX.
4.6
2.7
2.75
0.7
1
1.7
1.7
5.2
2.7
10.4
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
0.630
1.204
0.417
0.645
0.366
0.126
inch
TYP.
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
L3
L6
L7
F1
¯
F
D
G1
E
H
F2
1 2 3
L2
L4
G
3/4
BD533FP / BD534FP
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
©
1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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