Advance Product Information
Jan 27, 2003
27 - 32 GHz 2W Balanced Power Amplifier
Key Features
•
•
•
•
•
•
•
•
•
TGA4513-EPU
27 - 32 GHz Bandwidth
> 32 dBm P1dB
33 dBm Psat
20 dB Nominal Gain
IMR3 is 37 dBc @ 18 dBm SCL
14 dB Nominal Return Loss
Bias: 6 V, 840 mA
0.25 um 3MI mmW pHEMT Technology
Chip Dimensions: 2.8 x 2.2 x 0.1 mm
(0.110 x 0.087 x 0.004) in
Preliminary Measured Data
Bias Conditions: Vd = 6 V, Id = 840 mA
25
20
15
10
Gain (dB)
5
0
-5
-10
-15
-20
-25
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
35
34
33
Pout (dBm)
32
31
30
29
28
26
27
28
29
30
31
32
33
Frequency (GHz)
Primary Applications
•
•
•
•
Point to Point Radio
Point to Multi Point Radio
LMDS
Satellite Ground Terminal
Gain
ORL
IRL
Psat
P1dB
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
1
Advance Product Information
Jan 27, 2003
TGA4513-EPU
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
V
I
+
-
PARAMETER
Positive Supply Voltage
Negative Supply Voltage Range
Positive Supply Current
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
VALUE
6V
-5 TO 0 V
1.86 A
70 mA
22 dBm
TBD
150 C
320 C
-65 to 150 C
0
0
0
NOTES
2/
2/ 3/
3/
2/ 4/
5/ 6/
V
+
½I
G
½
P
IN
P
D
T
CH
T
M
T
STG
1/
2/
3/
4/
5/
These ratings represent the maximum operable values for this device.
Combinations of supply voltage, supply current, input power, and output power shall not exceed P
D
.
Total current for the entire MMIC.
When operated at this bias condition with a base plate temperature of TBD, the median life is
reduced from TBD to TBD hrs.
Operating channel temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that the channel (junction) temperatures be maintained at the
lowest possible levels.
These ratings apply to each individual FET.
6/
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
2
Advance Product Information
Jan 27, 2003
TGA4513-EPU
TABLE II
DC PROBE TESTS
(T
A
= 25
°C
Nominal)
SYMBOL
I
DSS1
G
M1
V
BVGS1
V
BVGD1
V
P1,8
PARAMETER
Saturated Drain Current
Transconductance
Breakdown Voltage gate-source
Breakdown Voltage gate-drain
Pinch-off Voltage
MINIMUM
60
132
-30
-30
-1.5
MAXIMUM
282
318
-8
-11
-0.5
VALUE
V
mS
V
V
V
Q1 is 600 um FET
TABLE III
ELECTRICAL CHARACTERISTICS
(Ta = 25
0
C, Nominal)
PARAMETER
Drain Operating
Quiescent Current
Small Signal Gain, S21
Input Return Loss, S11
Output Return Loss, S22
Reverse Isolation, S12
Output Power @ 1 dB Compression Gain, P1dB
Power @ saturated, Psat
IMR3 @ 18 dBm SCL
TYPICAL
6
840
20
14
14
-40
> 32
33
37
UNITS
V
mA
dB
dB
dB
dB
dBm
dBm
dBc
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
3
Advance Product Information
Jan 27, 2003
Preliminary Measured Data
Bias Conditions: Vd = 6 V, Id = 840 mA
TGA4513-EPU
26
24
22
20
18
Gain (dB)
16
14
12
10
8
6
4
2
0
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
35
34
33
P1dB (dBm)
32
31
30
29
28
26
27
Bias Conditions: Vd = 6 V, Id = 40 mA
-
40
0
C
Psat
+
25
0
C
P1dB
+
70
0
C
28
29
30
31
32
33
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
4
Advance Product Information
Jan 27, 2003
TGA4513-EPU
Preliminary Measured Data
Bias Conditions: Vd = 6 V, Id = 840 mA
0
-2
-4
Input Return Loss (dB)
-6
-8
-10
-12
-14
-16
-18
-20
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
0
-2
-4
Output Return Loss (dB)
-6
-8
-10
-12
-14
-16
-18
-20
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
5
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