FMM5815X
17.5-20GHz Power Amplifier MMIC
FEATURES
•
•
•
•
•
High Output Power: P1dB = 31dBm (Typ.)
High Gain: G1dB = 21dB (Typ.)
High PAE:
η
add = 30% (Typ.)
Impedance Matched Zin/Zout = 50Ω
0.25µm PHEMT Technology
DESCRIPTION
The FMM5815X is a high-gain, high linearity, 3-stage MMIC
amplifier designed for operation in the17.5-20.0 GHz
frequency range. This amplifier has an input and output
designed for use in 50Ω systems.This device is well suited for
point-to-point communication applications.
Eudyna’s stringent Quality Assurance Program assures the
highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain Voltage
Gate Voltage
Input Power
Storage Temperature
Operating Backside Temperature
Symbol
VDD
VGG
Pin
Tstg
Top
Condition
Rating
10
-3.0
22
-65 to +175
-65 to +85
Unit
V
V
dBm
°C
°C
Eudyna recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 6 volts.
2. The forward and reverse gate currents should not exceed 4 and -0.39 mA respectively.
3. This product should be hermetically packaged
ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25°C)
Item
Frequency Range
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Drain Current
Power-Added Efficiency
Input Return Loss
Output Return Loss
3rd Order Intermodulation
Distortion
Symbol
f
P
1dB
G
1dB
Iddrf
η
add
RLin
RLout
IM3
VDD = 6V
IDD
=
600mA (Typ.)
ZS = ZL = 50Ω
Conditions
Limits
Min. Typ. Max.
17.5 - 20.0
29.5
19
-
-
-
-
∆f=10MHz,
2-Tone Test,
-37.0
Pout=20dBm S.C.L.
31
21
700
30
-12
-8
-40
-
24
950
-
-
-
-
Unit
GHz
dBm
dB
mA
%
dB
dB
dBc
Note 1:
RF parameter sample size 10pcs. Criteria (accept/reject)=(0/1)
Note 2:
Electrical Characteristic is specified on RF-probe measurements
G.C.P.: Gain Compression Point
S.C.L.: Single Carrier Level
Edition 1.1
September 2004
1
FMM5815X
17.5-20GHz Power Amplifier MMIC
IM3 vs. OUTPUT POWER
-20
-25
-30
IM3 (dBc)
-35
-40
-45
-50
-55
-60
17
19
21
23
25
27
29
15
Total Output Power (dBm)
-4
0
4
8
12
0
VDD = 6V
IDD(DC) = 600mA
OUTPUT POWER vs. INPUT POWER
35
VDD = 6V
IDD(DC) = 600mA
Total Output Power (dBm)
17.5GHz
18.0GHz
20.0GHz
31
17.5GHz
18.0GHz
20.0GHz
Pout
27
23
η
add
40
η
add (%)
19
20
Total Input Power (dBm)
P1dB & G1dB vs. FREQUENCY
40
36
P1dB(dBm), G1dB(dB)
32
28
24
20
16
VDD = 6V
IDD(DC) = 600mA
P1dB
G1dB
η
add
120
104
88
72
56
40
24
η
add (%)
17.5
18.0
18.5
19.0
19.5
20.0
Frequency (GHz)
2
FMM5815X
17.5-20GHz Power Amplifier MMIC
S-PARAMETERS
VDD = 6V, IDS = 600mA
FREQUENCY
S11
(MHZ)
MAG
ANG
16500
17000
17500
18000
18500
19000
19500
20000
20500
21000
.357
.385
.443
.512
.566
.572
.538
.459
.346
.307
47.0
19.3
-10.5
-39.3
-66.7
-92.9
-117.9
-144.7
165.1
74.2
S21
MAG
10.785
12.059
13.360
14.483
14.782
14.585
13.693
13.188
12.600
11.066
S12
ANG
MAG
.004
.005
.005
.007
.007
.005
.005
.003
.005
.006
S22
ANG
-51.8
-42.8
-62.5
-83.0
-95.1
-112.5
-142.9
94.6
33.8
-10.5
MAG
.110
.111
.169
.205
.220
.178
.121
.051
.044
.080
ANG
-20.6
-93.5
-134.6
-166.6
164.9
137.0
108.3
53.6
19.8
11.4
-44.4
-80.4
-117.3
-156.9
161.9
120.3
78.7
37.1
-10.4
-65.4
ASSEMBLY DRAWING
VGG
0.15µF
VDD
0.15µF
220pF
220pF
RFin
RFout
220pF
220pF
Chip Size: 3.57mm x 2.76mm
0.15µF
VDD
3
FMM5815X
17.5-20GHz Power Amplifier MMIC
CHIP OUTLINE
VGG1
VDD1
0
2760
2640
2555
620 750
1155
2380
VDD2
3075
3570
2760
2510
1380
1194
RFout
RFin
280
205
120
0
250
0
Chip Size: 3570µm x 2760µm
Chip Thickness: 70µm
Pad Dimensions: 1. DC Pad: 80µm x 80µm
VDD: 100µm x 100µm
2. RF Pad: 120µm x 80µm
Unit:
µm
0 120
636 750
VDD3
1155
VDD4
VGG2
2380
3075
VDD5
3450 3570
For further information please contact:
CAUTION
Eudyna Devices Inc. products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
4
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