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5962R1020203VXC

产品描述Multi-Port SRAM Module, 1MX32, 20ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132
产品类别存储    存储   
文件大小304KB,共32页
制造商Cobham Semiconductor Solutions
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5962R1020203VXC概述

Multi-Port SRAM Module, 1MX32, 20ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132

5962R1020203VXC规格参数

参数名称属性值
厂商名称Cobham Semiconductor Solutions
零件包装代码QFP
包装说明QFP,
针数132
Reach Compliance Codeunknown
ECCN代码3A001.A.2.C
最长访问时间20 ns
其他特性ALSO OPERATES WITH 2.3V TO 3.6V SUPPLY
JESD-30 代码S-CQFP-G132
JESD-609代码e4
长度22.86 mm
内存密度33554432 bit
内存集成电路类型MULTI-PORT SRAM MODULE
内存宽度32
功能数量1
端子数量132
字数1048576 words
字数代码1000000
工作模式ASYNCHRONOUS
最高工作温度105 °C
最低工作温度-55 °C
组织1MX32
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装代码QFP
封装形状SQUARE
封装形式FLATPACK
并行/串行PARALLEL
认证状态Not Qualified
筛选级别MIL-PRF-38535 Class V
座面最大高度7.87 mm
最大供电电压 (Vsup)2 V
最小供电电压 (Vsup)1.7 V
表面贴装YES
技术CMOS
温度等级OTHER
端子面层GOLD
端子形式GULL WING
端子节距0.635 mm
端子位置QUAD
总剂量100k Rad(Si) V
宽度22.86 mm

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Standard Products
UT8ER1M32 32Megabit SRAM MCM
UT8ER2M32 64Megabit SRAM MCM
UT8ER4M32 128Megabit SRAM MCM
Data Sheet
January, 2013
www.aeroflex.com/memories
FEATURES
20ns Read, 10ns Write maximum access times available
Functionally compatible with traditional 1M, 2M and 4M
x 32 SRAM devices
CMOS compatible input and output levels, three-state
bidirectional data bus
- I/O Voltages 2.3V to 3.6V, 1.7V to 2.0Vcore
Available densities:
- UT8ER1M32: 33, 554, 432 bits
- UT8ER2M32: 67, 108, 864 bits
- UT8ER4M32: 134, 217, 728 bits
Operational environment:
- Total-dose: 100 krad(Si)
- SEL Immune: <110 MeV-cm
2
/mg
- SEU error rate = 8.1 x10
-16
errors/bit-day assuming
geosynchronous orbit, Adam’s 90% worst environment,
and 6600ns default Scrub Rate Period (=97% SRAM
availability)
Packaging option:
- 132-lead side-brazed dual cavity ceramic quad flatpack
Standard Microelectronics Drawing:
- UT8ER1M32: 5962-10202
- QML Q, Q+ and Vcompliant
- UT8ER2M32: 5962-10203
- QML Q, Q+ compliant
- UT8ER4M32: 5962-10204
- QML Q and Q+ compliant
INTRODUCTION
The UT8ER1M32, UT8ER2M32, and UT8ER4M32 are high
performance CMOS static RAM multichip modules (MCMs)
organized as two, four or eight individual 524,288 words x 32
bits dice respectively. Easy memory expansion is provided by
active LOW chip enables (En), an active LOW output enable
(G), and three-state drivers. This device has a power-down
feature that reduces power consumption by more than 90% when
deselected. Autonomous (master) and demanded (slave)
scrubbing continues while deselected.
Writing to the device is accomplished by driving one of the chip
enable (En) inputs LOW and the write enable (W) input LOW.
Data on the 32 I/O pins (DQ0 through DQ31) is then written into
the location specified on the address pins (A0 through A18).
Reading from the device is accomplished by driving one of the
chip enables (En) and output enable (G) LOW while driving
write enable (W) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.
Note:
Only on En pin may be active at any time.
The 32 input/output pins (DQ0 through DQ31) are placed in a
high impedance state when the device is deselected (En HIGH),
the outputs are disabled (G HIGH), or during a write operation
(En LOW, W LOW).
En
E1
A[18:0]
W
G
512Kx32
(Master or Slave)
Die 1
DQ[31:0]
19
512Kx32
(Slave)
Die 2, 4, or 8
32
MBE
BUSY/NC
SCRUB
Figure 1. Block Diagram
1
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