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5962D9960602TUC

产品描述Standard SRAM, 512KX8, 100ns, CMOS, CDFP32, BOTTOM BRAZED, CERAMIC, DFP-32
产品类别存储    存储   
文件大小198KB,共29页
制造商Cobham PLC
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5962D9960602TUC概述

Standard SRAM, 512KX8, 100ns, CMOS, CDFP32, BOTTOM BRAZED, CERAMIC, DFP-32

5962D9960602TUC规格参数

参数名称属性值
厂商名称Cobham PLC
包装说明DFP, FL32,.5
Reach Compliance Codeunknown
最长访问时间100 ns
I/O 类型COMMON
JESD-30 代码R-CDFP-F32
JESD-609代码e4
内存密度4194304 bit
内存集成电路类型STANDARD SRAM
内存宽度8
功能数量1
端子数量32
字数524288 words
字数代码512000
工作模式ASYNCHRONOUS
最高工作温度125 °C
最低工作温度-40 °C
组织512KX8
输出特性3-STATE
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装代码DFP
封装等效代码FL32,.5
封装形状RECTANGULAR
封装形式FLATPACK
并行/串行PARALLEL
电源5 V
认证状态Qualified
筛选级别MIL-PRF-38535 Class T
座面最大高度3.048 mm
最大待机电流0.0004 A
最小待机电流3 V
最大压摆率0.1 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级AUTOMOTIVE
端子面层GOLD
端子形式FLAT
端子节距1.27 mm
端子位置DUAL
总剂量10k Rad(Si) V
宽度12.192 mm

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REVISIONS
LTR
A
DESCRIPTION
Added device class Q parts and case outline X to drawing. Corrected
DATE (YR-MO-DA)
APPROVED
00-04-20
Raymond Monnin
E1 terminal symbol to
E.
Corrected table 1 footnotes. Corrections to
paragraph 1.5 and figure 4. Added 10 second data retention table to
figure 5. - glg
B
Corrections to case outline X dimensions and data retention
characteristics tables. - glg
Corrections to paragraph 1.5 and addition of footnote. - glg
Corrections to sheet 16, 1 second data retention test table. - glg
Corrected CAGE code typo, 67264 changed to 67268. Updated
boilerplate. ksr
Added 02 device for -40
°
C to +125
°
C temp range. Updated
boilerplate. ksr
Boilerplate update and part of five year review. tcr
00-05-30
Raymond Monnin
C
D
E
00-07-26
00-08-30
02-03-18
Raymond Monnin
Raymond Monnin
Raymond Monnin
F
02-05-28
Raymond Monnin
G
07-12-05
Robert M. Heber
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
G
15
G
16
G
17
G
18
REV
G
19
G
20
G
21
G
1
G
22
G
2
G
23
G
3
G
24
G
4
G
25
G
5
G
26
G
6
G
27
G
7
G
8
G
9
G
10
G
11
G
12
G
13
G
14
SHEET
PREPARED BY
Gary L. Gross
CHECKED BY
Jeff Bowling
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
http://www.dscc.dla.mil
APPROVED BY
Raymond Monnin
DRAWING APPROVAL DATE
99-09-28
REVISION LEVEL
G
MICROCIRCUIT, MEMORY, DIGITAL, CMOS,
512K x 8-BIT, RADIATION-HARDENED SRAM,
MONOLITHIC SILICON
SIZE
A
CAGE
CODE
67268
1 OF
27
5962-99606
5962-E097-08
SHEET
DSCC FORM 2233
APR 97

5962D9960602TUC相似产品对比

5962D9960602TUC 5962D9960601QUC 5962D9960601QUA 5962D9960602QUA 5962D9960601TUC 5962D9960602QUC 5962D9960601TUA
描述 Standard SRAM, 512KX8, 100ns, CMOS, CDFP32, BOTTOM BRAZED, CERAMIC, DFP-32 Standard SRAM, 512KX8, 100ns, CMOS, CDFP32, BOTTOM BRAZED, CERAMIC, DFP-32 Standard SRAM, 512KX8, 100ns, CMOS, CDFP32, BOTTOM BRAZED, CERAMIC, DFP-32 Standard SRAM, 512KX8, 100ns, CMOS, CDFP32, BOTTOM BRAZED, CERAMIC, DFP-32 Standard SRAM, 512KX8, 100ns, CMOS, CDFP32, BOTTOM BRAZED, CERAMIC, DFP-32 Standard SRAM, 512KX8, 100ns, CMOS, CDFP32, BOTTOM BRAZED, CERAMIC, DFP-32 Standard SRAM, 512KX8, 100ns, CMOS, CDFP32, BOTTOM BRAZED, CERAMIC, DFP-32
厂商名称 Cobham PLC Cobham PLC Cobham PLC Cobham PLC Cobham PLC Cobham PLC Cobham PLC
包装说明 DFP, FL32,.5 DFP, FL32,.5 DFP, FL32,.5 DFP, FL32,.5 DFP, FL32,.5 DFP, FL32,.5 DFP, FL32,.5
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown
最长访问时间 100 ns 100 ns 100 ns 100 ns 100 ns 100 ns 100 ns
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 R-CDFP-F32 R-CDFP-F32 R-CDFP-F32 R-CDFP-F32 R-CDFP-F32 R-CDFP-F32 R-CDFP-F32
JESD-609代码 e4 e4 e0 e0 e4 e4 e0
内存密度 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit
内存集成电路类型 STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
内存宽度 8 8 8 8 8 8 8
功能数量 1 1 1 1 1 1 1
端子数量 32 32 32 32 32 32 32
字数 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words
字数代码 512000 512000 512000 512000 512000 512000 512000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
最低工作温度 -40 °C -55 °C -55 °C -40 °C -55 °C -40 °C -55 °C
组织 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装代码 DFP DFP DFP DFP DFP DFP DFP
封装等效代码 FL32,.5 FL32,.5 FL32,.5 FL32,.5 FL32,.5 FL32,.5 FL32,.5
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLATPACK FLATPACK FLATPACK FLATPACK FLATPACK FLATPACK FLATPACK
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
电源 5 V 5 V 5 V 5 V 5 V 5 V 5 V
认证状态 Qualified Qualified Qualified Qualified Qualified Qualified Qualified
筛选级别 MIL-PRF-38535 Class T MIL-PRF-38535 Class Q MIL-PRF-38535 Class Q MIL-PRF-38535 Class Q MIL-PRF-38535 Class T MIL-PRF-38535 Class Q MIL-PRF-38535 Class T
座面最大高度 3.048 mm 3.048 mm 3.048 mm 3.048 mm 3.048 mm 3.048 mm 3.048 mm
最大待机电流 0.0004 A 0.0004 A 0.0004 A 0.0004 A 0.0004 A 0.0004 A 0.0004 A
最小待机电流 3 V 4.5 V 4.5 V 3 V 4.5 V 3 V 4.5 V
最大压摆率 0.1 mA 0.1 mA 0.1 mA 0.1 mA 0.1 mA 0.1 mA 0.1 mA
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 AUTOMOTIVE MILITARY MILITARY AUTOMOTIVE MILITARY AUTOMOTIVE MILITARY
端子面层 GOLD GOLD TIN LEAD TIN LEAD GOLD GOLD TIN LEAD
端子形式 FLAT FLAT FLAT FLAT FLAT FLAT FLAT
端子节距 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL
总剂量 10k Rad(Si) V 10k Rad(Si) V 10k Rad(Si) V 10k Rad(Si) V 10k Rad(Si) V 10k Rad(Si) V 10k Rad(Si) V
宽度 12.192 mm 12.192 mm 12.192 mm 12.192 mm 12.192 mm 12.192 mm 12.192 mm
Base Number Matches - 1 1 1 1 1 -

 
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