JMnic
Product Specification
Silicon PNP Power Transistors
2SB1098
DESCRIPTION
・With
TO-220F package
・Complement
to type 2SD1589
・DARLINGTON
・High
DC current gain
APPLICATIONS
・Low
speed switching industrial use
・Low
frequency power amplifier
PINNING
PIN
1
2
3
Emitter
Collector
Base
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
a
=25℃
P
C
Collector dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
20
150
-55~150
℃
℃
Open emitter
Open base
Open collector
CONDITIONS
MAX
-100
-100
-7
-5
-8
-0.5
2
W
UNIT
V
V
V
A
A
A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
T
j
=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=-3A; I
B
=-3mA
I
C
=-3A; I
B
=-3mA
V
CB
=-100V ;I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-3A ; V
CE
=-2V
I
C
=-5A ; V
CE
=-2V
2000
500
MIN
2SB1098
TYP.
MAX
-1.5
-2.0
-1
-3
15000
UNIT
V
V
μA
mA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=-3A ;I
B1
=-I
B2
=-3mA
R
L
=17Ω;V
CC
=-50V;
0.5
1
1
μs
μs
μs
h
FE-1
Classifications
R
2000-5000
O
3000-7000
Y
5000-15000
2
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