Si3443DV
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.065 @ V
GS
= –4.5 V
–20
20
0.090 @ V
GS
= –2.7 V
0.100 @ V
GS
= –2.5 V
I
D
(A)
"4.4
"3.7
"3.5
(4) S
TSOP-6
Top View
1
6
(3) G
3 mm
2
5
3
4
(1, 2, 5, 6) D
P-Channel MOSFET
2.85 mm
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
I
D
T
A
= 70_C
I
DM
I
S
P
D
T
J
, T
stg
"3.5
"20
–1.7
2.0
W
1.3
–55 to 150
_C
A
Symbol
V
DS
V
GS
Limit
–20
"12
"4.4
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
5 sec.
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Document Number: 70713
S-54948—Rev. B, 29-Sep-97
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Symbol
R
thJA
Limit
62.5
Unit
_C/W
2-1
Si3443DV
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= –20 V, V
GS
= 0 V
V
DS
= –20 V, V
GS
= 0 V, T
J
= 70_C
V
DS
= –5 V, V
GS
= –4.5 V
V
GS
= –4.5 V, I
D
= –4.4 A
Drain-Source On-State Resistance
a
D i S
O S
R i
r
DS(on)
V
GS
= –2.7 V, I
D
= –3.7 A
V
GS
= –2.5 V, I
D
= –3.5 A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= –10 V, I
D
= –4.4 A
I
S
= –1.7 A, V
GS
= 0 V
–15
0.058
0.080
0.087
10
–1.2
0.065
0.090
0.100
S
V
W
–0.6
"100
–1
–5
V
nA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= –1.7 A, di/dt = 100 A/ms
V
DD
= –10 V, R
L
= 10
W
10 V,
I
D
^
–1.0 A, V
GEN
= –4.5 V R
G
= 6
W
10A
4 5 V,
V
DS
= –10 V, V
GS
= –4.5 V I
D
= –4.4 A
10 V
4 5 V,
44
8.5
2.8
1.7
15
32
57
40
40
50
60
100
80
80
ns
15
nC
C
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
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Document Number: 70713
S-54948—Rev. B, 29-Sep-97
Si3443DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
3V
16
V
GS
= 5, 4.5, 4, 3.5 V
I D – Drain Current (A)
2.5 V
12
I D – Drain Current (A)
125_C
12
25_C
8
16
20
T
C
= –55_C
Transfer Characteristics
8
2V
4
1.5 V
0
0
1
2
3
4
5
4
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20
1500
Capacitance
r DS(on)– On-Resistance (
W
)
0.16
C – Capacitance (pF)
1200
C
iss
0.12
V
GS
= 2.5 V
V
GS
= 2.7 V
900
0.08
V
GS
= 4.5 V
600
C
oss
0.04
300
C
rss
0
0
4
8
12
16
20
0
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
5
V
DS
= 10 V
I
D
= 4.4 A
Gate Charge
1.6
On-Resistance vs. Junction Temperature
V GS – Gate-to-Source Voltage (V)
3
r DS(on)– On-Resistance (
W
)
(Normalized)
4
1.4
V
GS
= 4.5 V
I
D
= 4.4 A
1.2
2
1.0
1
0.8
0
0
2
4
6
8
10
Q
g
– Total Gate Charge (nC)
0.6
–50
–25
0
25
50
75
100
125
150
T
J
– Junction Temperature (_C)
Document Number: 70713
S-54948—Rev. B, 29-Sep-97
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FaxBack 408-970-5600
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Si3443DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
0.20
On-Resistance vs. Gate-to-Source Voltage
10
I S – Source Current (A)
r DS(on)– On-Resistance (
W
)
0.16
0.12
I
D
= 4.4 A
0.08
T
J
= 150_C
T
J
= 25_C
0.04
1
0
0.25
0.50
0.75
1.00
1.25
1.50
0
0
1
2
3
4
5
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.6
25
Single Pulse Power
0.4
V GS(th) Variance (V)
20
0.0
Power (W)
0.2
I
D
= 250
mA
15
10
–0.2
5
–0.4
–50
–25
0
25
50
75
100
125
150
0
0.01
0.10
Time (sec)
1.00
10.00
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 62.5_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
1
10
Square Wave Pulse Duration (sec)
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Document Number: 70713
S-54948—Rev. B, 29-Sep-97
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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