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Datasheet> 器件分类 > 存储> 存储> K4D263238K-GC40T

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K4D263238K-GC40T: 产品描述DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144; 产品类别存储存储; 文件大小465KB，共22页; 制造商SAMSUNG(三星); 官网地址http://www.samsung.com/Products/Semiconductor/

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K4D263238K-GC40T概述

DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144

K4D263238K-GC40T规格参数

参数名称	属性值
厂商名称	SAMSUNG(三星)
零件包装代码	BGA
包装说明	LFBGA,
针数	144
Reach Compliance Code	unknown
ECCN代码	EAR99
访问模式	FOUR BANK PAGE BURST
最长访问时间	0.6 ns
其他特性	AUTO/SELF REFRESH
JESD-30 代码	S-PBGA-B144
长度	12 mm
内存密度	134217728 bit
内存集成电路类型	DDR DRAM
内存宽度	32
功能数量	1
端口数量	1
端子数量	144
字数	4194304 words
字数代码	4000000
工作模式	SYNCHRONOUS
最高工作温度	65 °C
最低工作温度
组织	4MX32
封装主体材料	PLASTIC/EPOXY
封装代码	LFBGA
封装形状	SQUARE
封装形式	GRID ARRAY, LOW PROFILE, FINE PITCH
认证状态	Not Qualified
座面最大高度	1.4 mm
自我刷新	YES
最大供电电压 (Vsup)	2.625 V
最小供电电压 (Vsup)	2.375 V
标称供电电压 (Vsup)	2.5 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子形式	BALL
端子节距	0.8 mm
端子位置	BOTTOM
宽度	12 mm

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K4D263238K

128M GDDR SDRAM

128Mbit GDDR SDRAM

Revision 1.1

July 2007

Notice

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL

INFORMATION IN THIS DOCUMENT IS PROVIDED

ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar

applications where Product failure could result in loss of life or personal or physical harm, or any military or

defense application, or any governmental procurement to which special terms or provisions may apply.

* Samsung Electronics reserves the right to change products or specification without notice.

- 1/19 -

Rev. 1.1 July 2007

K4D263238K-GC40T相似产品对比

	K4D263238K-GC40T	K4D263238K-GC400	K4D263238K-VC40T	K4D263238K-GC50T	K4D263238K-GC500	K4D263238K-VC50T
描述	DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144	DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144	DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, LEAD FREE, FBGA-144	DDR DRAM, 4MX32, 0.7ns, CMOS, PBGA144, FBGA-144	DDR DRAM, 4MX32, 0.7ns, CMOS, PBGA144, FBGA-144	DDR DRAM, 4MX32, 0.7ns, CMOS, PBGA144, LEAD FREE, FBGA-144
零件包装代码	BGA	BGA	BGA	BGA	BGA	BGA
包装说明	LFBGA,	LFBGA,	LFBGA, BGA144,12X12,32	LFBGA,	LFBGA,	LFBGA, BGA144,12X12,32
针数	144	144	144	144	144	144
Reach Compliance Code	unknown	compliant	unknown	unknown	compliant	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
最长访问时间	0.6 ns	0.6 ns	0.6 ns	0.7 ns	0.7 ns	0.7 ns
其他特性	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 代码	S-PBGA-B144	S-PBGA-B144	S-PBGA-B144	S-PBGA-B144	S-PBGA-B144	S-PBGA-B144
长度	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm
内存密度	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit
内存集成电路类型	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
内存宽度	32	32	32	32	32	32
功能数量	1	1	1	1	1	1
端口数量	1	1	1	1	1	1
端子数量	144	144	144	144	144	144
字数	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words
字数代码	4000000	4000000	4000000	4000000	4000000	4000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	65 °C	65 °C	65 °C	65 °C	65 °C	65 °C
组织	4MX32	4MX32	4MX32	4MX32	4MX32	4MX32
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm
自我刷新	YES	YES	YES	YES	YES	YES
最大供电电压 (Vsup)	2.625 V	2.625 V	2.625 V	2.625 V	2.625 V	2.625 V
最小供电电压 (Vsup)	2.375 V	2.375 V	2.375 V	2.375 V	2.375 V	2.375 V
标称供电电压 (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
表面贴装	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	BALL	BALL	BALL	BALL	BALL	BALL
端子节距	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
宽度	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm
厂商名称	SAMSUNG(三星)	SAMSUNG(三星)	-	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)
是否Rohs认证	-	不符合	符合	-	不符合	符合

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