JMnic
Product Specification
Silicon PNP Power Transistors
2SB1097
DESCRIPTION
・With
TO-220Fa package
・Low
collector saturation voltage
・Complement
to type 2SD1588
APPLICATIONS
・For
low frequency power amplifier and
low speed switching applications
PINNING
PIN
1
2
3
Emitter
Collector
Base
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
30
150
-55~150
℃
℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-80
-60
-5
-7
2.0
W
UNIT
V
V
V
A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=-30mA; I
B
=0
I
C
=-1mA; I
E
=0
I
E
=-1mA; I
C
=0
I
C
=-5A ;I
B
=-0.5A
I
C
=-5A ;I
B
=-0.5A
V
CB
=-60V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-3A ; V
CE
=-1V
40
MIN
-60
-80
-5
2SB1097
TYP.
MAX
UNIT
V
V
V
-0.5
-1.5
-10
-10
200
V
V
μA
μA
h
FE
Classifications
M
40-80
L
60-120
K
100-200
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1097
Fig.2 Outline dimensions (unindicated tolerance:
±0.15
mm)
3
模拟与混合信号
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