K4S511533C-YN1H概述

Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, CSP-54

K4S511533C-YN1H规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	SAMSUNG(三星)
零件包装代码	BGA
包装说明	LFBGA, BGA54,9X9,32
针数	54
Reach Compliance Code	compliant
ECCN代码	EAR99
访问模式	FOUR BANK PAGE BURST
最长访问时间	7 ns
其他特性	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	100 MHz
I/O 类型	COMMON
交错的突发长度	1,2,4,8
JESD-30 代码	R-PBGA-B54
JESD-609代码	e0
长度	15.5 mm
内存密度	536870912 bit
内存集成电路类型	SYNCHRONOUS DRAM
内存宽度	16
湿度敏感等级	3
功能数量	1
端口数量	1
端子数量	54
字数	33554432 words
字数代码	32000000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-25 °C
组织	32MX16
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	LFBGA
封装等效代码	BGA54,9X9,32
封装形状	RECTANGULAR
封装形式	GRID ARRAY, LOW PROFILE, FINE PITCH
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	3/3.3 V
认证状态	Not Qualified
刷新周期	8192
座面最大高度	1.3 mm
自我刷新	YES
连续突发长度	1,2,4,8,FP
最大待机电流	0.002 A
最大压摆率	0.17 mA
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	2.7 V
标称供电电压 (Vsup)	3 V
表面贴装	YES
技术	CMOS
温度等级	OTHER
端子面层	Tin/Lead (Sn/Pb)
端子形式	BALL
端子节距	0.8 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	9.5 mm

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K4S511533C-YL/N/P

CMOS SDRAM

32Mx16

Mobile SDRAM

54CSP 2/CS

(VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V)

Revision 1.2

December 2002

Rev. 1.2 Dec. 2002

K4S511533C-YN1H相似产品对比

	K4S511533C-YN1H	K4S511533C-YL1L	K4S511533C-YL1H	K4S511533C-YP1L	K4S511533C-YP1H	K4S511533C-YN1L	K4S511533C-YP80	K4S511533C-YN80	K4S511533C-YL80
描述	Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, CSP-54	Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, CSP-54	Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, CSP-54	Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, CSP-54	Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, CSP-54	Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, CSP-54	Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54, CSP-54	Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54, CSP-54	Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54, CSP-54
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
零件包装代码	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
包装说明	LFBGA, BGA54,9X9,32	LFBGA, BGA54,9X9,32	LFBGA, BGA54,9X9,32	LFBGA, BGA54,9X9,32	LFBGA, BGA54,9X9,32	LFBGA, BGA54,9X9,32	LFBGA, BGA54,9X9,32	LFBGA, BGA54,9X9,32	LFBGA, BGA54,9X9,32
针数	54	54	54	54	54	54	54	54	54
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
最长访问时间	7 ns	7 ns	7 ns	7 ns	7 ns	7 ns	6 ns	6 ns	6 ns
其他特性	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	125 MHz	125 MHz	125 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
交错的突发长度	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8
JESD-30 代码	R-PBGA-B54	R-PBGA-B54	R-PBGA-B54	R-PBGA-B54	R-PBGA-B54	R-PBGA-B54	R-PBGA-B54	R-PBGA-B54	R-PBGA-B54
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0	e0
长度	15.5 mm	15.5 mm	15.5 mm	15.5 mm	15.5 mm	15.5 mm	15.5 mm	15.5 mm	15.5 mm
内存密度	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit
内存集成电路类型	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
内存宽度	16	16	16	16	16	16	16	16	16
功能数量	1	1	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1	1	1
端子数量	54	54	54	54	54	54	54	54	54
字数	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words
字数代码	32000000	32000000	32000000	32000000	32000000	32000000	32000000	32000000	32000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	70 °C	70 °C	85 °C	85 °C	85 °C	85 °C	85 °C	70 °C
最低工作温度	-25 °C	-25 °C	-25 °C	-40 °C	-40 °C	-25 °C	-40 °C	-25 °C	-25 °C
组织	32MX16	32MX16	32MX16	32MX16	32MX16	32MX16	32MX16	32MX16	32MX16
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA
封装等效代码	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
电源	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
刷新周期	8192	8192	8192	8192	8192	8192	8192	8192	8192
座面最大高度	1.3 mm	1.3 mm	1.3 mm	1.3 mm	1.3 mm	1.3 mm	1.3 mm	1.3 mm	1.3 mm
自我刷新	YES	YES	YES	YES	YES	YES	YES	YES	YES
连续突发长度	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP
最大待机电流	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A
最大压摆率	0.17 mA	0.16 mA	0.17 mA	0.16 mA	0.17 mA	0.16 mA	0.19 mA	0.19 mA	0.19 mA
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
标称供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	OTHER	OTHER	OTHER	INDUSTRIAL	INDUSTRIAL	OTHER	INDUSTRIAL	OTHER	OTHER
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
端子节距	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
宽度	9.5 mm	9.5 mm	9.5 mm	9.5 mm	9.5 mm	9.5 mm	9.5 mm	9.5 mm	9.5 mm
厂商名称	SAMSUNG(三星)	SAMSUNG(三星)	-	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)

K4S511533C-YN1H

K4S511533C-YN1H概述

K4S511533C-YN1H规格参数

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