JMnic
Product Specification
Silicon PNP Power Transistors
2SB1096
DESCRIPTION
・With
TO-220Fa package
・High
breakdown voltage
・Complement
to type 2SD1587
APPLICATIONS
・For
TV vertical output applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
25
150
-55~150
℃
℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-200
-150
-5
-2
2.0
W
UNIT
V
V
V
A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=-30mA; I
B
=0
I
E
=-1mA; I
C
=0
I
C
=-500mA ;I
B
=-50mA
I
C
=-500mA ;I
B
=-50mA
V
CB
=-150V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.4A ; V
CE
=-10V
I
C
=-0.4A; V
CE
=-10V
40
5
MIN
-150
-5
2SB1096
TYP.
MAX
UNIT
V
V
-1.0
-1.5
-50
-50
200
V
V
μA
μA
MHz
h
FE
Classifications
M
40-80
L
60-120
K
100-200
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1096
Fig.2 Outline dimensions (unindicated tolerance:
±0.15
mm)
3
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