VS-ST330CL Series
www.vishay.com
Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 650 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case TO-200AC (B-PUK)
• High profile hockey PUK
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
TO-200AC (B-PUK)
• DC motor controls
• Controlled DC power supplies
• AC controllers
PRODUCT SUMMARY
Package
Diode variation
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
TO-200AC (B-PUK)
Single SCR
650 A
400 V, 800 V, 1200 V, 1400 V,
1600 V, 1800 V, 2000 V
1.90 V
100 mA
-40 °C to 125 °C
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Typical
T
hs
T
hs
50 Hz
60 Hz
50 Hz
60 Hz
TEST CONDITIONS
VALUES
650
55
1230
25
9000
9420
405
370
400 to 2000
100
-40 to 125
UNITS
A
°C
A
°C
A
kA
2
s
V
μs
°C
Revision: 18-Dec-13
Document Number: 94408
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST330CL Series
www.vishay.com
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
08
12
VS-ST330C..L
14
16
18
20
V
DRM
/V
RRM
, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
400
800
1200
1400
1600
1800
2000
V
RSM
, MAXIMUM
I
DRM
/I
RRM
MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
AT T
J
= T
J
V
MAXIMUM mA
500
900
1300
1500
1700
1900
2100
50
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
I
2
√t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
650 (314)
55 (75)
1230
9000
9420
7570
Sinusoidal half wave,
initial T
J
= T
J
maximum
7920
405
370
287
262
4050
0.91
0.93
0.57
0.57
1.90
600
1000
kA
2
√s
V
mΩ
V
mA
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
I
pk
= 1730 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
T
J
= 25 °C, anode supply 12 V resistive load
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dI/dt
t
d
t
q
TEST CONDITIONS
Gate drive 20 V, 20
Ω,
t
r
≤
1 μs
T
J
= T
J
maximum, anode voltage
≤
80 % V
DRM
Gate current 1 A, dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
I
TM
= 550 A, T
J
= T
J
maximum, dI/dt = 40 A/μs,
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100
Ω,
t
p
= 500 μs
VALUES
1000
1.0
μs
100
UNITS
A/μs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
50
UNITS
V/μs
mA
Revision: 18-Dec-13
Document Number: 94408
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST330CL Series
www.vishay.com
Vishay Semiconductors
VALUES
Typ.
Max.
10.0
2.0
3.0
20
5.0
200
Maximum required gate
trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
100
50
2.5
1.8
1.1
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
DRM
anode to
cathode applied
10
-
200
-
-
3.0
-
mA
V
mA
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
I
GM
+ V
GM
- V
GM
I
GT
TEST CONDITIONS
T
J
= T
J
maximum, t
p
≤
5 ms
T
J
= T
J
maximum, f = 50 Hz, d% = 50
T
J
= T
J
maximum, t
p
≤
5 ms
T
J
= T
J
maximum, t
p
≤
5 ms
T
J
= -40 °C
DC gate current required to trigger
T
J
= 25 °C
T
J
= 125 °C
T
J
= -40 °C
DC gate voltage required to trigger
V
GT
T
J
= 25 °C
T
J
= 125 °C
DC gate current not to trigger
I
GD
T
J
= T
J
maximum
DC gate voltage not to trigger
V
GD
UNITS
W
A
V
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
SYMBOL
T
J
T
Stg
R
thJ-hs
R
thC-hs
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
VALUES
-40 to 125
-40 to 150
0.11
0.06
0.011
0.005
9800
(1000)
250
See dimensions - link at the end of datasheet
N
(kg)
g
K/W
UNITS
°C
Maximum thermal resistance, case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
TO-200AC (B-PUK)
ΔR
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
0.012
0.014
0.018
0.026
0.045
DOUBLE SIDE
0.010
0.015
0.018
0.027
0.046
RECTANGULAR CONDUCTION
SINGLE SIDE
0.008
0.014
0.019
0.027
0.046
DOUBLE SIDE
0.008
0.014
0.019
0.028
0.046
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Revision: 18-Dec-13
Document Number: 94408
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST330CL Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Heatsink T
emperature (°C)
130
120
110
100
90
80
70
60
50
40
30
20
0
200
400
600 800 1000 1200 1400
Average On-state Current (A)
30°
60°
90°
120°
180°
DC
Conduction Period
Maximum Allowable Heatsink T
emperature (°C)
130
120
110
100
90
S 330C..L Series
T
(S
ingle S Cooled)
ide
R
thJ-hs
(DC) = 0.11 K/ W
S 330C..L S
T
eries
(Double S Cooled)
ide
R
thJ-hs
(DC) = 0.05 K/ W
Conduction Angle
80
70
60
50
40
30
0
50 100 150 200 250 300 350 400 450
Average On-state Current (A)
30°
60°
90°
120°
180°
Fig. 1 - Current Ratings Characteristics
Maximum Allowable Heats T
ink emperature (°C)
Fig. 4 - Current Ratings Characteristics
120
110
100
90
80
70
60
50
40
30
20
0
200
30°
S 330C..L S
T
eries
(S
ingle S
ide Cooled)
R
thJ-hs
(DC) = 0.11 K/ W
Maximum Average On-s
tate Power Loss (W)
130
1600
1400
1200
1000
800
600
400
200
0
0
100 200 300 400 500 600 700 800
Average On-state Current (A)
Conduc tion Angle
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
60°
90°
120°
180°
400
DC
600
800
S 330C..L S
T
eries
T = 125°C
J
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Maximum Allowable Heatsink T
emperature (°C)
Fig. 5 - On-State Power Loss Characteristics
130
120
110
100
90
80
70
60
50
40
30
20
0
200
30°
Maximum Average On-state Power Los (W)
s
S 330C..L S
T
eries
(Double S Cooled)
ide
R
thJ-hs
(DC) = 0.05 K/ W
2200
2000
1800
1600
1400
DC
180°
120°
90°
60°
30°
Conduction Angle
1200 RMSLimit
1000
800
600
400
200
0
0
200 400
600
800 1000 1200 1400
Average On-s
tate Current (A)
S 330C..L S
T
eries
T
J
= 125°C
Conduction Period
60°
90°
120°
180°
400
600
800
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - On-State Power Loss Characteristics
Revision: 18-Dec-13
Document Number: 94408
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST330CL Series
www.vishay.com
Vishay Semiconductors
Peak Half S Wave On-state Current (A)
ine
9000
8500
Peak Half S Wave On-state Current (A)
ine
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Maximum Non Repetitive S
urge Current
Vers Pulse T
us
rain Duration. Control
Of Conduction May Not Be Maintained.
8000
Initial T = 125°C
J
7500
No Voltage Reapplied
Rated V
RRM
R
eapplied
7000
6500
6000
5500
5000
4500
4000
S 330C..L S
T
eries
0.1
Puls T
e rain Duration (s)
1
S 330C..L S
T
eries
10
100
3500
0.01
Numb er Of Eq ual Amplitude Half Cycle Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
Instantaneous On-state Current (A)
Tj = 125 °C
1000
Tj = 25 °C
ST330C..L Series
100
0
1
2
3
4
5
6
7
Instantaneous On-state Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
T
ransient T
hermal Impedance Z
thJ-hs
(K/ W)
1
S
teady S
tate Value
R
thJ-hs
= 0.11 K/ W
(S
ingle S
ide Cooled)
0.1
R
thJ-hs
= 0.05 K/ W
(Double S
ide Cooled)
(DC Operation)
0.01
S 330C..L S
T
eries
0.001
0.001
0.01
0.1
S
quare Wave Puls Duration (s)
e
1
10
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Revision: 18-Dec-13
Document Number: 94408
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
