HGTD1N120BNS概述

Insulated Gate Bipolar Transistor, 5.3A I(C), 1200V V(BR)CES, N-Channel, TO-252AA

HGTD1N120BNS规格参数

	HGTD1N120BNS	HGTP1N120BN	HGTD1N120BNS9A
描述	Insulated Gate Bipolar Transistor, 5.3A I(C), 1200V V(BR)CES, N-Channel, TO-252AA	Insulated Gate Bipolar Transistor, 5.3A I(C), 1200V V(BR)CES, N-Channel, TO-220AB	Insulated Gate Bipolar Transistor, 5.3A I(C), 1200V V(BR)CES, N-Channel, TO-252AA
厂商名称	Harris	Harris	Harris
包装说明	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown	unknown	unknown
其他特性	LOW CONDUCTION LOSS	LOW CONDUCTION LOSS	LOW CONDUCTION LOSS
外壳连接	COLLECTOR	COLLECTOR	COLLECTOR
最大集电极电流 (IC)	5.3 A	5.3 A	5.3 A
集电极-发射极最大电压	1200 V	1200 V	1200 V
配置	SINGLE	SINGLE	SINGLE
JEDEC-95代码	TO-252AA	TO-220AB	TO-252AA
JESD-30 代码	R-PSSO-G2	R-PSFM-T3	R-PSSO-G2
元件数量	1	1	1
端子数量	2	3	2
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	FLANGE MOUNT	SMALL OUTLINE
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL
认证状态	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	NO	YES
端子形式	GULL WING	THROUGH-HOLE	GULL WING
端子位置	SINGLE	SINGLE	SINGLE
晶体管应用	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL
晶体管元件材料	SILICON	SILICON	SILICON
标称断开时间 (toff)	75 ns	75 ns	75 ns
标称接通时间 (ton)	13 ns	13 ns	13 ns

器件捷径: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ