S E M I C O N D U C T O R
HFA3102
Dual Long-Tailed Pair Transistor Array
Description
The HFA3102 is an all NPN transistor array configured as
dual differential amplifiers with tail transistors. Based on
Harris bonded wafer UHF-1 SOI process, this array achieves
very high f
T
(10GHz) while maintaining excellent h
FE
and
V
BE
matching characteristics over temperature. Collector
leakage currents are maintained to under 0.01nA.
August 1994
Features
• High Gain-Bandwidth Product (f
T
) . . . . . . . . . . . 10GHz
• High Power Gain-Bandwidth Product . . . . . . . . . 5GHz
• High Current Gain (h
FE
) . . . . . . . . . . . . . . . . . . . . . . . 70
• Noise Figure (Transistor) . . . . . . . . . . . . . . . . . . . 3.5dB
• Low Collector Leakage Current . . . . . . . . . . . . <0.01nA
• Excellent h
FE
and V
BE
Matching
• Pin-to-Pin to UPA102G
Ordering Information
PART NUMBER
HFA3102Y
HFA3102B
HFA3102B96
Die
14 Lead Plastic SOIC (N)
14 Lead Plastic SOIC (N) - Tape and Reel
PRODUCT DESCRIPTION
Applications
• Single Balanced Mixers
• Wide Band Amplification Stages
• Differential Amplifiers
• Multipliers
• Automatic Gain Control Circuits
• Frequency Doublers, Tripplers
• Oscillators
• Constant Current Sources
• Wireless Communication Systems
• Radio and Satellite Communications
• Fiber Optic Signal Processing
• High Performance Instrumentation
Pinout/Functional Diagram
HFA3102
TOP VIEW
14
13
12
11
10
9
8
Q1
Q2
Q6
Q4
Q3
Q5
1
2
3
4
5
6
7
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
©
Harris Corporation 1995
File Number
3635.1
9-38
Specifications HFA3102
Absolute Maximum Ratings
V
CEO
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . 8.0V
V
CBO
Collector to Base Voltage . . . . . . . . . . . . . . . . . . . . . . . 12.0V
V
EBO
Emitterr to Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . 12.0V
I
C
, Collector Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
T
STG
, Storage Temperature Range . . . . . . . . . . . . -65
o
C to +150
o
C
Operating Temperature Range . . . . . . . . . . . . . . . . . -40
o
C to +85
o
C
T
J
, Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . . . . +175
o
C
T
J
, Junction Temperature (Plastic Package) . . . . . . . . . . . . +150
o
C
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300
o
C
(Lead Tips Only)
Thermal Information
Thermal Resistance
θ
JA
Plastic SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . 125
o
C/W
Maximum Package Power Dissipation at +75
o
C
Any One Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.25W
Plastic SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6W
Derating Factor Above +75
o
C
Plastic SOIC Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8mW/
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
at +25
o
C
TEST
LEVEL
A
A
A
A
A
A
B
B
C
C
C
-
-
C
-
-
C
-
-
A
A
A
C
B
ALL GRADES
MIN
12
8
5.5
-
-
40
-
-
-
-
-
-
-
-
-
-
-
-
-
0.9
-
-
-
-
TYP
18
12
6
0.1
-
70
300
200
10
5
-
17.5
12.4
-
1.8
2.1
-
3.3
3.5
1.0
1.5
5
0.5
0.01
MAX
-
-
-
10
100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.1
5
25
-
-
UNITS
V
V
V
nA
nA
-
fF
fF
GHz
GHz
-
dB
-
-
dB
-
-
dB
-
-
mV
µA
µV/
o
C
nA
SYMBOLS
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
C
CB
C
EB
f
T
f
MAX
G
NFMIN
PARAMETER
Collector-to-Base Breakdown Voltage
(Q
1
, Q
2
, Q
4
, and Q
5
)
Collector-to-Emitter Breakdown
Voltage (Q
1
thru Q
6
)
Emitter-to-Base Breakdown Voltage
(Q
3
and Q
6
)
Collector Cutoff Current
(Q
1
, Q
2
, Q
4
, and Q
5
)
Emitter Cutoff Current (Q
3
and Q
6
)
DC Current Gain (Q
1
thru Q
6
)
Collector-to-Base Capacitance
Emitter-to-Base Capacitance
Current Gain-Bandwidth Product
Power Gain
-
Bandwidth Product
Available Gain at Minimum Noise
Figure
TEST CONDITIONS
I
C
= 100µA, I
E
= 0
I
C
= 100µA, I
B
= 0
I
E
= 50µA, I
C
= 0
V
CB
= 5V, I
E
= 0
V
EB
= 1V, I
C
= 0
I
C
= 10mA, V
CE
= 3 V
V
CB
= 5V, f = 1MHz
V
EB
= 0, f = 1MHz
I
C
= 10mA, V
CE
= 5V
I
C
= 10mA, V
CE
= 5V
I
C
= 3mA, V
CE
= 3
f = 0.5GHz
f = 1.0GHz
NF
MIN
Minimum Noise Figure
I
C
= 3mA, V
CE
= 3V
f = 0.5GHz
f = 1.0GHz
NF
50Ω
50Ω Noise Figure
I
C
= 3mA, V
CE
= 3V
f = 0.5GHz
f = 1.0GHz
h
FE1
/h
FE2
V
OS
I
OS
dV
OS
/dT
I
TRENCH-
LEAKAGE
DC Current Gain Matching
(Q
1
and Q
2
, Q
4
and Q
5
)
Input Offset Voltage (Q
1
and Q
2
),
(Q
4
and Q
5
)
Input Offset Current (Q
1
and Q
2
),
(Q
4
and Q
5
)
Input Offset Voltage TC
(Q
1
and Q
2
, Q
4
and Q
5
)
Collector-to-Collector Leakage
(Pin 6, 7, 13, and 14)
V
CE
= 3V, I
C
= 10mA
I
C
= 10mA, V
CE
= 3V
I
C
= 10mA, V
CE
= 3V
I
C
= 10mA, V
CE
= 3V
∆V
TEST
= 5V
Test Level: A. Production Tested
B. Guaranteed Limit or Typical Based on Characterization
C. Design Typical for Information Only
9-39
HFA3102
Performance Curves
x 10
3
12.0
I
B
= 150µ
10.0
I
B
= 120µ
8.0
I
B
= 90µ
I
C
(A)
6.0
I
B
= 60µ
4.0
I
B
= 30µ
2.0
0.0
0.0
1.0
2.0
3.0
V
CE
(V)
4.0
5.0
h
FE
140.0
120.0
100.0
80.0
60.0
40.0
20.0
0.0
10
-10
10
-8
10
-6
I
C
10
-4
(A)
10
-2
10
0
FIGURE 1. I
C
vs V
CE
FIGURE 2. h
FE
vs I
C
10
0
10
-2
I
C
AND I
B
(A)
10
-4
10
-6
10
-8
10
-10
10
-12
0.40
0.60
V
BE
(V)
0.80
V
CE
= 3
12.0
10.0
8.0
f
T
(Hz)
6.0
4.0
2.0
0.0
10
-4
V
CE
= 5V
1.0
10
-3
I
C
(A)
10
-2
10
-1
FIGURE 3. GUMMEL PLOT
FIGURE 4. f
T
vs I
C
4.8
4.6
NOISE FIGURE (dB)
4.4
4.2
4.0
3.8
3.6
3.4
3.2
0.0
20.0
P
OUT
, OUTPUT POWER (dBM)
18.0
16.0
|S
21
| (dB)
14.0
12.0
10.0
8.0
6.0
2.0
0.50
1.0
1.5
2.0
2.5
3.0
40
20
0
-20
3RD ORDER INTERCEPT POINT
1dB COMPRESSION POINT
V
CE
= 5 V
-40
-60
-80
-100
-30
I
C
= 10mA
FREQ = 1GHz
3RD ORDER PRODUCTS
-20
-10
0
P
IN
, INPUT POWER (dBm)
10
FREQUENCY (GHz)
FIGURE 5. GAIN AND NOISE FIGURE vs FREQUENCY
FIGURE 6. P
1dB
AND 3RD ORDER INTERCEPT
9-40
HFA3102
PSPICE Model for a Single Transistor
+ ( IS= 1.840E-16
+ VAR= 4.500E+00
+ IKF= 5.400E-02
+ NC= 1.800E+00
+ MJC= 2.400E-01
+ MJE= 5.100E-01
+ ITF= 3.500E-02
+ XCJC= 9.000E-01
+ RE= 1.848E+00
+ AF= 1.000E+00)
XTI= 3.000E+00
BF= 1.036E+02
XTB= 0.000E+00
IKR= 5.400E-02
VJC= 9.700E-01
VJE= 8.690E-01
XTF= 2.300E+00
CJS= 1.689E-13
RB= 5.007E+01
EG= 1.110E+00
ISE= 1.686E-19
BR= 1.000E+01
RC= 1.140E+01
FC= 5.000E-01
TR= 4.000E-09
VTF= 3.500E+00
VJS= 9.982E-01
RBM= 1.974E+00
VAF= 7.200E+01
NE= 1.400E+00
ISC= 1.605E-14
CJC= 3.980E-13
CJE= 2.400E-13
TF= 10.51E-12
PTF= 0.000E+00
MJS= 0.000E+00
KF= 0.000E+00
9-41
HFA3102
Common Emitter S-Parameters
V
CE
= 5V and I
C
= 5mA
FREQ. (Hz)
1.0E+08
2.0E+08
3.0E+08
4.0E+08
5.0E+08
6.0E+08
7.0E+08
8.0E+08
9.0E+08
1.0E+09
1.1E+09
1.2E+09
1.3E+09
1.4E+09
1.5E+09
1.6E+09
1.7E+09
1.8E+09
1.9E+09
2.0E+09
2.1E+09
2.2E+09
2.3E+09
2.4E+09
2.5E+09
2.6E+09
2.7E+09
2.8E+09
2.9E+09
3.0E+09
|S11|
0.833079
0.791776
0.734911
0.672811
0.612401
0.557126
0.508133
0.465361
0.428238
0.396034
0.368032
0.343589
0.322155
0.303268
0.286542
0.271660
0.258359
0.246420
0.235659
0.225923
0.217085
0.209034
0.201678
0.194939
0.188747
0.183044
0.177780
0.172909
0.168394
0.164200
PHASE(S11)
-11.7873
-22.8290
-32.6450
-41.0871
-48.2370
-54.2780
-59.4102
-63.8123
-67.6313
-70.9834
-73.9591
-76.6285
-79.0462
-81.2548
-83.2880
-85.1723
-86.9292
-88.5759
-90.1265
-91.5925
-92.9836
-94.3076
-95.5713
-96.7803
-97.9395
-99.0530
-100.124
-101.156
-102.152
-103.114
|S12|
1.418901E-02
2.695740E-02
3.750029E-02
4.572138E-02
5.194147E-02
5.659943E-02
6.009507E-02
6.274213E-02
6.477134E-02
6.634791E-02
6.758932E-02
6.857937E-02
6.937837E-02
7.003020E-02
7.056718E-02
7.101343E-02
7.138717E-02
7.170231E-02
7.196964E-02
7.219757E-02
7.239274E-02
7.256046E-02
7.270498E-02
7.282977E-02
7.293764E-02
7.303093E-02
7.311157E-02
7.318117E-02
7.324107E-02
7.329243E-02
PHASE(S12)
78.8805
68.6355
59.5861
51.9018
45.5043
40.2112
35.8226
32.1594
29.0743
26.4506
24.1974
22.2441
20.5358
19.0293
17.6908
16.4930
15.4143
14.4370
13.5469
12.7319
11.9824
11.2901
10.6480
10.0503
9.49212
8.96908
8.47753
8.01430
7.57661
7.16204
|S21|
11.0722
10.5177
9.75379
8.91866
8.10511
7.35944
6.69712
6.11750
5.61303
5.17405
4.79104
4.45546
4.15997
3.89845
3.66577
3.45770
3.27074
3.10197
2.94897
2.80969
2.68243
2.56573
2.45837
2.35928
2.26756
2.18243
2.10322
2.02934
1.96027
1.89556
PHASE(S21)
168.576
157.897
148.443
140.361
133.569
127.882
123.102
119.047
115.571
112.556
109.913
107.570
105.472
103.576
101.849
100.262
98.7956
97.4307
96.1533
94.9515
93.8156
92.7373
91.7097
90.7271
89.7844
88.8775
88.0026
87.1565
86.3366
85.5404
|S22|
0.976833
0.930993
0.868128
0.799886
0.734033
0.674392
0.622181
0.577269
0.538952
0.506365
0.478663
0.455091
0.435008
0.417872
0.403238
0.390735
0.380056
0.370947
0.363195
0.356623
0.351081
0.346442
0.342599
0.339458
0.336942
0.334982
0.333518
0.332499
0.331879
0.331620
PHASE(S22)
-11.0509
-21.3586
-30.4451
-38.1641
-44.5998
-49.9370
-54.3777
-58.1022
-61.2587
-63.9647
-66.3116
-68.3702
-70.1958
-71.8314
-73.3108
-74.6609
-75.9030
-77.0544
-78.1288
-79.1377
-80.0903
-80.9942
-81.8557
-82.6802
-83.4719
-84.2347
-84.9716
-85.6853
-86.3781
-87.0518
V
CE
= 5V and I
C
= 10mA
FREQ. (Hz)
1.0E+08
2.0E+08
3.0E+08
4.0E+08
5.0E+08
6.0E+08
7.0E+08
8.0E+08
9.0E+08
1.0E+09
1.1E+09
1.2E+09
1.3E+09
1.4E+09
1.5E+09
1.6E+09
1.7E+09
1.8E+09
1.9E+09
2.0E+09
2.1E+09
2.2E+09
2.3E+09
2.4E+09
2.5E+09
2.6E+09
2.7E+09
2.8E+09
2.9E+09
3.0E+09
|S11|
0.728106
0.670836
0.600268
0.531768
0.471795
0.421506
0.379961
0.345693
0.317301
0.293608
0.273680
0.256782
0.242344
0.229918
0.219152
0.209767
0.201539
0.194288
0.187867
0.182157
0.177056
0.172484
0.168370
0.164656
0.161293
0.158239
0.155458
0.152919
0.150595
0.148463
PHASE(S11)
-16.4319
-31.2669
-43.7663
-54.0028
-62.3880
-69.3569
-75.2612
-80.3608
-84.8420
-88.8381
-92.4452
-95.7336
-98.7555
-101.551
-104.150
-106.577
-108.851
-110.988
-113.001
-114.902
-116.698
-118.399
-120.012
-121.542
-122.996
-124.378
-125.694
-126.947
-128.140
-129.279
|S12|
1.273920E-02
2.342300E-02
3.132521E-02
3.681579E-02
4.057046E-02
4.316292E-02
4.499071E-02
4.631140E-02
4.728948E-02
4.803091E-02
4.860515E-02
4.905871E-02
4.942344E-02
4.972158E-02
4.996903E-02
5.017730E-02
5.035491E-02
5.050825E-02
5.064218E-02
5.076045E-02
5.086598E-02
5.096107E-02
5.104755E-02
5.112690E-02
5.120031E-02
5.126876E-02
5.133304E-02
5.139381E-02
5.145164E-02
5.150697E-02
PHASE(S12)
75.4177
62.8941
52.5891
44.5019
38.2308
33.3405
29.4764
26.3755
23.8481
21.7581
20.0070
18.5224
17.2505
16.1506
15.1915
14.3490
13.6040
12.9411
12.3482
11.8151
11.3338
10.8974
10.5001
10.1373
9.80479
9.49919
9.21750
8.95716
8.71595
8.49194
|S21|
15.1273
13.9061
12.3970
10.9257
9.62995
8.53559
7.62375
6.86423
6.22797
5.69057
5.23257
4.83873
4.49716
4.19854
3.93554
3.70234
3.49428
3.30758
3.13919
2.98658
2.84766
2.72068
2.60420
2.49697
2.39793
2.30619
2.22098
2.14162
2.06753
1.99820
PHASE(S21)
165.227
152.045
141.185
132.570
125.781
120.378
116.005
112.398
109.365
106.771
104.518
102.532
100.759
99.1602
97.7028
96.3629
95.1215
93.9633
92.8761
91.8500
90.8766
89.9494
89.0626
88.2115
87.3920
86.6007
85.8348
85.0916
84.3690
83.6651
|S22|
0.959692
0.886232
0.796016
0.708892
0.633146
0.570209
0.518803
0.476987
0.442915
0.415044
0.392146
0.373261
0.357640
0.344698
0.333974
0.325102
0.317789
0.311800
0.306940
0.303051
0.300003
0.297686
0.296007
0.294889
0.294266
0.294081
0.294285
0.294836
0.295696
0.296834
PHASE(S22)
-14.2688
-26.9507
-37.3172
-45.4503
-51.7704
-56.7206
-60.6598
-63.8540
-66.4948
-68.7193
-70.6269
-72.2899
-73.7620
-75.0832
-76.2840
-77.3877
-78.4122
-79.3715
-80.2768
-81.1365
-81.9578
-82.7460
-83.5057
-84.2405
-84.9533
-85.6466
-86.3223
-86.9822
-87.6275
-88.2595
9-42
模拟电子
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