Datasheet> 器件分类 > 分立半导体> 晶体管> ASI10494

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ASI10494: 产品描述RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN,; 产品类别分立半导体晶体管; 文件大小21KB，共1页; 制造商Advanced Semiconductor, Inc.

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ASI10494概述

RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN,

ASI10494规格参数

参数名称	属性值
厂商名称	Advanced Semiconductor, Inc.
包装说明	POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code	unknown
最大集电极电流 (IC)	2.5 A
基于收集器的最大容量	20 pF
最高频带	ULTRA HIGH FREQUENCY BAND
JESD-30 代码	O-CRPM-F4
端子数量	4
最高工作温度	200 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	ROUND
封装形式	POST/STUD MOUNT
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	NO
端子形式	FLAT
端子位置	RADIAL
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON

ASI10494文档预览

UMIL20

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The

ASI UMIL20

is a Common Emitter

Device Designed for Class A , AB and

C Amplifier Applications in the 225 to

400 MHz Military Communications

Band.

PACKAGE STYLE .280 4L STUD

FEATURES:

•

Direct Replacement for

MRF323

•

= 12 dB Typical at 400 MHz

•

Omnigold™

Metalization System

MAXIMUM RATINGS

CBO

DISS

STG

2.5 A

65 V

35 W @ T

= 25

-65

C to +200

-65 C to +150 C

5.0

C/W

1 = Collector

2 = Base

3 & 4 = Emitter

ORDER CODE: ASI10494

CHARACTERISTICS

SYMBOL

CBO

CER

EBO

CBO

= 20 mA

= 30 V

= 5 V

= 28 V

= 25

TEST CONDITIONS

= 200

Ω

MINIMUM TYPICAL MAXIMUM

3.5

2.0

UNITS

---

= 1.0 A

f = 1.0 MHz

OUT

= 20 W

f = 400 MHz

200

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1200

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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