HCTS540MS
September 1995
Radiation Hardened
Inverting Octal Buffer/Line Driver, Three-State
Pinouts
20 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T20, LEAD FINISH C
TOP VIEW
OE1
A0
A1
A2
A3
A4
A5
A6
A7
1
2
3
4
5
6
7
8
9
20 VCC
19 OE2
18 Y0
17 Y1
16 Y2
15 Y3
14 Y4
13 Y5
12 Y6
11 Y7
Features
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
• Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
• Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
- Bus Driver Outputs 15 LSTTL Loads
• Military Temperature Range: -55
o
C to +125
o
C
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• Input Current Levels Ii
≤
5µA at VOL, VOH
GND 10
20 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F20, LEAD FINISH C
TOP VIEW
OE1
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
VCC
OE2
Y0
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Description
The Intersil HCTS540MS is a Radiation Hardened inverting
Octal Buffer/Line Driver, with two active-low output enables.
The output enable pins (OE1 and OE2) control the three-
state outputs. If either enable is high the outputs will be in
the high impedance state. For data output both enables
(OE1 and OE2) must be low.
The HCTS540MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS540MS is supplied in a 20 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
A0
A1
A2
A3
A4
A5
A6
A7
GND
Ordering Information
PART NUMBER
HCTS540DMSR
HCTS540KMSR
HCTS540D/Sample
HCTS540K/Sample
HCTS540HMSR
TEMPERATURE RANGE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
+25
o
C
+25
o
C
+25
o
C
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
20 Lead SBDIP
20 Lead Ceramic Flatpack
20 Lead SBDIP
20 Lead Ceramic Flatpack
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Spec Number
File Number
1
518631
2232.2
HCTS540MS
Functional Diagram
ONE OF 8 BUFFERS
18 Y0
Y OUTPUTS
(18 - 11)
OE
A0 2
A INPUTS
(2 - 9)
TO OTHER
7 BUFFERS
OE1 1
OE2 19
TRUTH TABLE
OE1
L
L
H
X
H
L
X
Z
= High Level
= Low Level
= Don’t Care
= High Impedance
OE2
L
L
X
H
AN
L
H
X
X
OUTPUT
H
L
Z
Z
Spec Number
2
518631
Specifications HCTS540MS
Absolute Maximum Ratings
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output.
. . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance
θ
JA
θ
JC
o
C/W
SBDIP Package. . . . . . . . . . . . . . . . . . . .
72
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . . 107
o
C/W 28
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.9mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 9.3mW/
o
C
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . 500ns Max.
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
1
2, 3
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
1
2, 3
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC - 0.4V,
VIL = 0V
1
2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-
-
7.2
6.0
-7.2
-6.0
MAX
40
750
-
-
-
-
UNITS
µA
µA
mA
mA
mA
mA
PARAMETER
Quiescent Current
SYMBOL
ICC
(NOTE 1)
CONDITIONS
VCC = 5.5V,
VIN = VCC or GND
Output Voltage Low
VOL
VCC = 4.5V, VIH = 2.25V,
IOL = 50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V, VIH = 2.25V,
IOH = -50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
VCC
-0.1
-
-
-
-
-
-
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
2, 3
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
±0.5
±5.0
±1
±50
-
µA
µA
µA
µA
-
Three-State Output
Leakage Current
IOZ
VCC = 5.5V, Applied Volt-
age = 0V or VCC
1
2, 3
Noise Immunity
Functional Test
NOTES:
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 2)
7, 8A, 8B
1. All voltages referenced to device GND.
2. For functional tests, VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
Spec Number
3
518631
Specifications HCTS540MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
9
10, 11
9
10, 11
TPZH
VCC = 4.5V
9
10, 11
Disable to Output
TPLZ,
TPHZ
VCC = 4.5V
9
10, 11
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
2
2
2
2
2
2
2
2
MAX
21
25
30
35
26
30
26
30
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
PARAMETER
Data to Output
SYMBOL
TPHL
TPLH
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
Enable to Output
TPZL
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Capacitance Power
Dissipation
SYMBOL
CPD
CONDITIONS
VCC = 5.0V, f = 1MHz
NOTES
1
1
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
1
1
Output Transition
Time
TTHL,
TTLH
VCC = 4.5V
1
1
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-
-
-
-
-
-
MAX
45
50
10
10
12
18
UNITS
pF
pF
pF
pF
ns
ns
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
-
6.0
-6.0
-
MAX
0.75
-
-
0.1
UNITS
mA
mA
mA
V
PARAMETER
Quiescent Current
Output Current (Sink)
Output Current
(Source)
Output Voltage Low
SYMBOL
ICC
IOL
IOH
VOL
(NOTES 1, 2)
CONDITIONS
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
VCC = 4.5V or 5.5V, VIH = VCC/2,
VIL = 0.8V, IOL = 50µA
Spec Number
4
518631
Specifications HCTS540MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
200K RAD
LIMITS
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
VCC = 4.5V
+25
o
C
MIN
VCC
-0.1
-
-
-
2
2
2
2
MAX
-
±5
±50
-
25
35
30
30
UNITS
V
µA
µA
-
ns
ns
ns
ns
PARAMETER
Output Voltage High
Input Leakage Current
Three-State Ouptut
Leakage Current
Noise Immunity
Functional Test
Data to Output
Enable to Output
SYMBOL
VOH
IIN
IOZ
FN
TPLH,
TPHL
TPZL
TPZH
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V or 5.5V, VIH = VCC/2,
VIL = 0.8V, IOH = -50µA
VCC = 5.5V, VIN = VCC or GND
VCC = 5.5V, Applied Voltage = 0V or VCC
VCC = 4.5V, VIH = 2.25V, VIL = 0.8V,
(Note 3)
VCC = 4.5V
VCC = 4.5V
Disable to Output
NOTES:
TPLZ,
TPHZ
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
GROUP B
SUBGROUP
5
5
5
PARAMETER
ICC
IOL/IOH
IOZL/IOZH
DELTA LIMIT
12µA
-15% of 0 Hour
±200nA
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
Initial Test (Preburn-In)
Interim Test
I
(Postburn-In)
Interim Test
II
(Postburn-In)
PDA
Interim Test
III
(Postburn-In)
PDA
Final Test
Group A (Note 1)
Group B
Subgroup B-5
Subgroup B-6
Group D
NOTES:
1. Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 may be exercised.
2. Table 5 parameters only.
METHOD
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
Sample/5005
Sample/5005
Sample/5005
Sample/5005
GROUP A SUBGROUPS
1, 7, 9
1, 7, 9
1, 7, 9
1, 7, 9, Deltas
1, 7, 9
1, 7, 9, Deltas
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
1, 7, 9
1, 7, 9
Subgroups 1, 2, 3, 9, 10, 11,
(Note 2)
READ AND RECORD
ICC, IOL/H
ICC, IOL/H
ICC, IOL/H
Spec Number
5
518631
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