600W, UNIDIRECTIONAL, SILICON, TVS DIODE, GLASS, CB-431, 2 PIN
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | ST(意法半导体) |
| 包装说明 | E-LALF-W2 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| 最大击穿电压 | 13.2 V |
| 最小击穿电压 | 10.8 V |
| 击穿电压标称值 | 12 V |
| 外壳连接 | ISOLATED |
| 最大钳位电压 | 17.3 V |
| 配置 | SINGLE |
| 二极管元件材料 | SILICON |
| 二极管类型 | TRANS VOLTAGE SUPPRESSOR DIODE |
| JESD-30 代码 | E-LALF-W2 |
| JESD-609代码 | e0 |
| 最大非重复峰值反向功率耗散 | 600 W |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 最高工作温度 | 175 °C |
| 封装主体材料 | GLASS |
| 封装形状 | ELLIPTICAL |
| 封装形式 | LONG FORM |
| 极性 | UNIDIRECTIONAL |
| 最大功率耗散 | 3 W |
| 最大重复峰值反向电压 | 9.1 V |
| 表面贴装 | NO |
| 技术 | AVALANCHE |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | WIRE |
| 端子位置 | AXIAL |
| GT6108 | GT6109 | GT6102 | GT6107 | GT6106A | GT6109A | GT6108A | |
|---|---|---|---|---|---|---|---|
| 描述 | 600W, UNIDIRECTIONAL, SILICON, TVS DIODE, GLASS, CB-431, 2 PIN | 600W, UNIDIRECTIONAL, SILICON, TVS DIODE, GLASS, CB-431, 2 PIN | 600W, UNIDIRECTIONAL, SILICON, TVS DIODE, GLASS, CB-431, 2 PIN | 600W, UNIDIRECTIONAL, SILICON, TVS DIODE, GLASS, CB-431, 2 PIN | 600W, UNIDIRECTIONAL, SILICON, TVS DIODE, GLASS, CB-431, 2 PIN | 600W, UNIDIRECTIONAL, SILICON, TVS DIODE, GLASS, CB-431, 2 PIN | 600W, UNIDIRECTIONAL, SILICON, TVS DIODE, GLASS, CB-431, 2 PIN |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 包装说明 | E-LALF-W2 | GLASS, CB-431, 2 PIN | GLASS, CB-431, 2 PIN | GLASS, CB-431, 2 PIN | E-LALF-W2 | GLASS, CB-431, 2 PIN | GLASS, CB-431, 2 PIN |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最大击穿电压 | 13.2 V | 14.3 V | 7.48 V | 12.1 V | 10.5 V | 13.65 V | 12.6 V |
| 最小击穿电压 | 10.8 V | 11.7 V | 6.12 V | 9.9 V | 9.5 V | 12.35 V | 11.4 V |
| 击穿电压标称值 | 12 V | 13 V | 6.8 V | 11 V | 10 V | 13 V | 12 V |
| 外壳连接 | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| 最大钳位电压 | 17.3 V | 19 V | 10.8 V | 16.2 V | 14.5 V | 18.2 V | 16.7 V |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 二极管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 二极管类型 | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE |
| JESD-30 代码 | E-LALF-W2 | E-LALF-W2 | E-LALF-W2 | E-LALF-W2 | E-LALF-W2 | E-LALF-W2 | E-LALF-W2 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 最大非重复峰值反向功率耗散 | 600 W | 600 W | 600 W | 600 W | 600 W | 600 W | 600 W |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
| 最高工作温度 | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| 封装主体材料 | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS |
| 封装形状 | ELLIPTICAL | ELLIPTICAL | ELLIPTICAL | ELLIPTICAL | ELLIPTICAL | ELLIPTICAL | ELLIPTICAL |
| 封装形式 | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
| 极性 | UNIDIRECTIONAL | UNIDIRECTIONAL | UNIDIRECTIONAL | UNIDIRECTIONAL | UNIDIRECTIONAL | UNIDIRECTIONAL | UNIDIRECTIONAL |
| 最大功率耗散 | 3 W | 3 W | 3 W | 3 W | 3 W | 3 W | 3 W |
| 最大重复峰值反向电压 | 9.1 V | 9.9 V | 5.2 V | 8.4 V | 7.6 V | 9.9 V | 9.1 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO |
| 技术 | AVALANCHE | AVALANCHE | AVALANCHE | AVALANCHE | AVALANCHE | AVALANCHE | AVALANCHE |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| 端子位置 | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |
| 厂商名称 | ST(意法半导体) | - | - | - | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) |
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