MBR20V100CT
100V, 20A SWITCHMODE™
Power Rectifier
Features and Benefits
•
•
•
•
•
•
•
Low Forward Voltage: 0.62 V @ 125°C
175°C Operating Junction Temperature
20 A Total (10 A Per Diode Leg)
Guard−Ring for Stress Protection
Low Power Loss/High Efficiency
High Surge Capacity
Pb−Free Package is Available
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
100 VOLTS
1
2, 4
3
4
Applications
•
Power Supply
•
Power Management
•
Instrumentation
Mechanical Characteristics
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets UL 94, V−0 @ 0.125 in
Weight: 1.9 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
TO−220AB
CASE 221A
PLASTIC
1
2
3
MARKING DIAGRAM
YY WW
B20V100
AKA
B20V100= Device Code
YY
= Year
WW
= Work Week
AKA
= Polarity Designator
ORDERING INFORMATION
Device
MBR20V100CT
MBR20V100CTG
Package
TO−220
TO−220
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
©
Semiconductor Components Industries, LLC, 2004
1
November, 2004 − Rev. 0
Publication Order Number:
MBR20V100CT/D
MBR20V100CT
MAXIMUM RATINGS
(Per Diode Leg)
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
R
) T
C
= 160°C
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz)
T
C
= 160°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0
ms,
1.0 kHz)
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated V
R
)
ESD Ratings: Machine Model = C
Human Body Model = 3B
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
Value
100
Unit
V
10
20
A
A
I
FSM
I
RRM
T
J
T
stg
dv/dt
210
0.5
+175
*65
to +175
10,000
>400
>8000
A
A
°C
°C
V/ms
V
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from junction− to−ambient: dP
D
/dT
J
< 1/R
qJA
THERMAL CHARACTERISTICS
Rating
Maximum Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
Symbol
R
qJC
R
qJA
Value
2.0
60
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Rating
Maximum Instantaneous Forward Voltage (Note 2)
I
F
= 10 A
I
F
= 20 A
Maximum Instantaneous Reverse Current (Note 2)
V
R
= 100 V
2. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
Symbol
v
F
0.74
0.85
I
R
0.0045
6.0
mA
0.62
0.70
T
J
= 255C
T
J
= 1255C
Unit
V
http://onsemi.com
2
MBR20V100CT
I
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
I
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
100
T
J
= 150°C
10
T
J
= 125°C
T
J
= 25°C
T
J
= −55°C
100
T
J
= 150°C
10
T
J
= 125°C
T
J
= 25°C
1
1
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
V
F
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
(VOLTS)
Figure 1. Typical Forward Voltage Per Leg
Figure 2. Maximum Forward Voltage Per Leg
1.0E−01
I
R
, REVERSE CURRENT (AMPS)
1.0E−02
T
J
= 150°C
T
J
= 125°C
I
R
, MAXIMUM REVERSE CURRENT (AMPS)
100E−3
10E−3
1E−3
T
J
= 150°C
1.0E−03
T
J
= 125°C
1.0E−04
1.0E−05
1.0E−06
T
J
= 25°C
100E−6
10E−6
1E−6
T
J
= 25°C
1.0E−07
1.0E−08
0
100E−9
10E−9
0
10
20
30
40
50
60
70
80
90 100
10
20
30
40
50
60
70
80
90 100
V
R
, REVERSE VOLTAGE (VOLTS)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current Per Leg
Figure 4. Maximum Reverse Current Per Leg
I
F
, AVERAGE FORWARD CURRENT (AMPS)
20
dc
10000
T
J
= 25°C
C, CAPACITANCE (pF)
120
140
160
180
1000
SQUARE WAVE
10
100
0
0
20
40
60
80
100
T
C
, CASE TEMPERATURE (°C)
10
0
20
40
60
80
100
120
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Current Derating Per Leg
Figure 6. Capacitance Per Leg
http://onsemi.com
3
MBR20V100CT
R(t), TRANSIENT THERMAL RESISTANCE
100
D = 0.5
10
0.2
0.1
0.05
0.01
0.1
P
(pk)
t
1
0.01
SINGLE PULSE
t
2
1
DUTY CYCLE, D = t
1
/t
2
0.001
0.000001
0.00001
0.0001
0.001
0.01
t
1
, TIME (sec)
0.1
1
10
100
1000
Figure 7. Thermal Response Junction−to−Ambient
R(t), TRANSIENT THERMAL RESISTANCE
10
1
D = 0.5
0.2
0.1
0.05
0.01
P
(pk)
t
1
t
2
0.1
0.01
SINGLE PULSE
DUTY CYCLE, D = t
1
/t
2
0.001
0.000001
0.00001
0.0001
0.001
0.01
t
1
, TIME (sec)
0.1
1
10
100
1000
Figure 8. Thermal Response Junction−to−Case
http://onsemi.com
4
MBR20V100CT
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AA
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−−
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
−T−
B
4
F
T
S
C
Q
1 2 3
A
U
K
H
Z
L
V
G
D
N
R
J
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
