UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT30NP30
DUAL POWER MOSFET
(N-CHANNEL/P-CHANNEL)
DESCRIPTION
1
Power MOSFET
The UTC
UTT30NP30
is a dual power MOSFET. it uses UTC’s
advanced technology to provide customers with a minimum on-state
resistance, low capacitance and low gate charge, etc.
The UTC
UTT30NP30
is suitable for CPU Power Delivery and
DC−DC Converters, etc.
TO-252-4
FEATURES
* N-Channel: 30A, 20V
R
DS(on)
<15mΩ @V
GS
=10V, I
D
=30A
R
DS(on)
<18mΩ @V
GS
=4.5V, I
D
=30A
P-Channel: -30A, -25V
R
DS(on)
<25mΩ @V
GS
= -10V, I
D
= -30A
R
DS(on)
<24mΩ @V
GS
= -4.5V, I
D
= -30A
* Low capacitance
SYMBOL
ORDERING INFORMATION
1
S1
Pin Assignment
2
3
4
G1
D
S2
5
G2
Packing
Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
UTT30NP30L-TN4-R
UTT30NP30G-TN4-R
TO-252-4
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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QW-R502-A40.b
UTT30NP30
MARKING
Preliminary
Power MOSFET
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QW-R502-A40.b
UTT30NP30
PARAMETER
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
J
=25°C, unless otherwise specified)
SYMBOL
RATINGS
UNIT
N-CHANNEL
P-CHANNEL
Drain-Source Voltage
V
DSS
20
-25
V
Gate-Source Voltage
V
GSS
±8
±20
V
I
D
30
-30
A
Continuous
T
A
=25°C
Drain Current
Pulsed (Note)
I
DM
120
-120
A
Power Dissipation
P
D
3.1
W
Junction Temperature
T
J
-55~+150
°C
Storage Temperature Range
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θ
JA
RATINGS
40
UNIT
C/W
Junction to Ambient
ELECTRICAL CHARACTERISTICS
(T
J
=25°C unless otherwise noted)
MIN TYP MAX UNIT
20
V
1.0 µA
+100 nA
-100 nA
1.2
15
18
1500
260
260
160 170
5.5
10.5
31
38
57
62
458 510
234 270
0.9
1.25
V
mΩ
mΩ
pF
pF
pF
nC
nC
nC
nS
nS
nS
nS
V
N-channel
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250µA
Drain-Source Leakage Current
I
DSS
V
DS
=20V, V
GS
=0V, T
J
=25°C
Forward
V
GS
=+8V, V
GS
=0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-8V, V
GS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=30A
Static Drain-Source On-State Resistance
R
DS(ON)
(Note 2)
V
GS
=4.5V, I
D
=30A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=20V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
Q
G
V
GS
=10V, V
DS
=16V, I
D
=30A
Gate to Source Charge
Q
GS
Gate to Drain Charge
Q
GD
Turn-ON Delay Time (Note 2)
t
D(ON)
Rise Time
t
R
V
DS
=10V, I
D
=1A
V
GS
=10V, R
G
=3.3Ω
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note 2)
V
SD
I
SD
=30A
0.5
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UTT30NP30
P-Channel
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
MIN TYP MAX UNIT
-25
-1.0
+100
-100
-1
-1.5
-3
25
34
V
µA
nA
nA
V
mΩ
mΩ
pF
pF
pF
160
nC
nC
nC
nS
nS
nS
nS
V
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=-250µA
Drain-Source Leakage Current
I
DSS
V
DS
=-24V, V
GS
=0V, T
J
=25°C
Forward
V
GS
=+25V, V
GS
=0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-25V, V
GS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=-250µA
V
GS
=-10V, I
D
=-30A
Static Drain-Source On-State Resistance
R
DS(ON)
(Note 2)
V
GS
=-4.5V, I
D
=-30A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=-15V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
Q
G
V
GS
=-10V, V
DS
=-20V, I
D
=-30A
Gate to Source Charge
Q
GS
Gate to Drain Charge
Q
GD
Turn-ON Delay Time (Note 2)
t
D(ON)
Rise Time
t
R
V
DS
= -12.5V, I
D
= -1A
V
GS
= -10V, R
G
=3.3Ω
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note 2)
V
SD
I
S
= -30A
Notes: 1. Pulse Test: Pulse width limited by Max. junction temperature.
2. N-CH, P-CH are same, mounted on 2oz FR4 board t
≦
10s.
1500
270
230
140
5.4
8.7
34
42
308
173
42
48
330
220
-1.2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R502-A40.b
UTT30NP30
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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