Datasheet> 器件分类 > 存储> 存储> MBM29LV160TE12PCV-E1

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MBM29LV160TE12PCV-E1: 产品描述Flash, 2MX8, 120ns, PDSO48, PLASTIC, SOP-48; 产品类别存储存储; 文件大小759KB，共59页; 制造商SPANSION; 官网地址http://www.spansion.com/; 标准

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MBM29LV160TE12PCV-E1概述

Flash, 2MX8, 120ns, PDSO48, PLASTIC, SOP-48

MBM29LV160TE12PCV-E1规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	SPANSION
零件包装代码	SOIC
包装说明	PLASTIC, SOP-48
针数	48
Reach Compliance Code	compliant
ECCN代码	EAR99
最长访问时间	120 ns
启动块	TOP
JESD-30 代码	R-PDSO-C48
长度	10 mm
内存密度	16777216 bit
内存集成电路类型	FLASH
内存宽度	8
湿度敏感等级	3
功能数量	1
端子数量	48
字数	2097152 words
字数代码	2000000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	2MX8
封装主体材料	PLASTIC/EPOXY
封装代码	VSOC
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, VERY THIN PROFILE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	260
编程电压	3 V
认证状态	Not Qualified
座面最大高度	1 mm
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	2.7 V
标称供电电压 (Vsup)	3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子形式	C BEND
端子节距	0.4 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	40
类型	NOR TYPE
宽度	9.5 mm

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FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20883-1E

FLASH MEMORY

CMOS

16M (2M

8/1M

16) BIT

MBM29LV160TE/BE

70/90/12

FEATURES

• 0.23

µm

Process Technology

• Single 3.0 V read, program and erase

Minimizes system level power requirements

• Compatible with JEDEC-standard commands

Uses same software commands as E

PROMs

• Compatible with JEDEC-standard world-wide pinouts

48-pin TSOP (I) (Package suffix: TN-Normal Bend Type, TR-Reversed Bend Type)

48-pin CSOP (Package suffix: PCV)

48-ball FBGA (Package suffix: PBT)

• Minimum 1,000,000 program/erase cycles

• High performance

70 ns maximum access time

• Sector erase architecture

One 8K word, two 4K words, one 16K word, and thirty-one 32K words sectors in word mode

One 16K byte, two 8K bytes, one 32K byte, and thirty-one 64K bytes sectors in byte mode

Any combination of sectors can be concurrently erased. Also supports full chip erase

• Boot Code Sector Architecture

T = Top sector

B = Bottom sector

• Embedded Erase

Algorithms

Automatically pre-programs and erases the chip or any sector

(Continued)

PRODUCT LINE UP

Part No.

= 3.3 V

Ordering Part No.

= 3.0 V

Max. Address Access Time (ns)

Max. CE Access Time (ns)

Max. OE Access Time (ns)

+0.3 V

–0.3 V

+0.6 V

–0.3 V

MBM29LV160TE/160BE

—

120

MBM29LV160TE/BE

-70/90/12

GENERAL DESCRIPTION

The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M

words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA

packages. The device is designed to be programmed in-system with the standard system 3.0 V V

supply. 12.0

V V

and 5.0 V V

are not required for write or erase operations. The device can also be reprogrammed in

standard EPROM programmers.

The standard MBM29LV160TE/BE offers access times of 70 ns, 90 ns and 120 ns, allowing operation of high-

speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable

(CE), write enable (WE), and output enable (OE) controls.

The MBM29LV160TE/BE is pin and command set compatible with JEDEC standard E

PROMs. Commands are

written to the command register using standard microprocessor write timings. Register contents serve as input

to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally

latch addresses and data needed for the programming and erase operations. Reading data out of the device is

similar to reading from 5.0 V and 12.0 V Flash or EPROM devices.

The MBM29LV160TE/BE is programmed by executing the program command sequence. This will invoke the

Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths

and verifies proper cell margins. Typically, each sector can be programmed and verified in about 0.5 seconds.

Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase

Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed

before executing the erase operation. During erase, the device automatically times the erase pulse widths and

verifies proper cell margins.

Any individual sector is typically erased and verified in 1.0 second. (If already preprogrammed.)

The device also features a sector erase architecture. The sector mode allows each sector to be erased and

reprogrammed without affecting other sectors. The MBM29LV160TE/BE is erased when shipped from the factory.

The device features single 3.0 V power supply operation for both read and write functions. Internally generated

and regulated voltages are provided for the program and erase operations. A low V

detector automatically

inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ

by the Toggle Bit feature on DQ

, or the RY/BY output pin. Once the end of a program or erase cycle has been

comleted, the device internally resets to the read mode.

The MBM29LV160TE/BE also has a hardware RESET pin. When this pin is driven low, execution of any

Embedded Program Algorithm or Embedded Erase Algorithm is terminated. The internal state machine is then

reset to the read mode. The RESET pin may be tied to the system reset circuitry. Therefore, if a system reset

occurs during the Embedded Program Algorithm or Embedded Erase Algorithm, the device is automatically

reset to the read mode and will have erroneous data stored in the address locations being programmed or

erased. These locations need re-writing after the Reset. Resetting the device enables the system’s

microprocessor to read the boot-up firmware from the Flash memory.

Fujitsu’s Flash technology combines years of Flash memory manufacturing experience to produce the highest

levels of quality, reliability, and cost effectiveness. The MBM29LV160TE/BE memory electrically erases all bits

within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word

at a time using the EPROM programming mechanism of hot electron injection.

MBM29LV160TE12PCV-E1相似产品对比

	MBM29LV160TE12PCV-E1	MBM29LV160BE12PCV-E1	MBM29LV160BE12PBT-E1	MBM29LV160TE12PBT-E1	MBM29LV160TE12PBT	MBM29LV160TE12PCV	MBM29LV160BE12PCV	MBM29LV160BE12PBT
描述	Flash, 2MX8, 120ns, PDSO48, PLASTIC, SOP-48	Flash, 2MX8, 120ns, PDSO48, PLASTIC, SOP-48	Flash, 2MX8, 120ns, PBGA48, PLASTIC, FBGA-48	Flash, 2MX8, 120ns, PBGA48, PLASTIC, FBGA-48	Flash, 2MX8, 120ns, PBGA48, PLASTIC, FBGA-48	Flash, 2MX8, 120ns, PDSO48, PLASTIC, SOP-48	Flash, 2MX8, 120ns, PDSO48, PLASTIC, SOP-48	Flash, 2MX8, 120ns, PBGA48, PLASTIC, FBGA-48
零件包装代码	SOIC	SOIC	BGA	BGA	BGA	SOIC	SOIC	BGA
包装说明	PLASTIC, SOP-48	PLASTIC, SOP-48	PLASTIC, FBGA-48	PLASTIC, FBGA-48	PLASTIC, FBGA-48	PLASTIC, SOP-48	VSOC, TSSOC48,.4,16	TFBGA, BGA48,6X8,32
针数	48	48	48	48	48	48	48	48
Reach Compliance Code	compliant	compliant	unknown	unknown	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最长访问时间	120 ns	120 ns	120 ns	120 ns	120 ns	120 ns	120 ns	120 ns
启动块	TOP	BOTTOM	BOTTOM	TOP	TOP	TOP	BOTTOM	BOTTOM
JESD-30 代码	R-PDSO-C48	R-PDSO-C48	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48	R-PDSO-C48	R-PDSO-C48	R-PBGA-B48
长度	10 mm	10 mm	8 mm	8 mm	8 mm	10 mm	10 mm	8 mm
内存密度	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit
内存集成电路类型	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH
内存宽度	8	8	8	8	8	8	8	8
功能数量	1	1	1	1	1	1	1	1
端子数量	48	48	48	48	48	48	48	48
字数	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words
字数代码	2000000	2000000	2000000	2000000	2000000	2000000	2000000	2000000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
组织	2MX8	2MX8	2MX8	2MX8	2MX8	2MX8	2MX8	2MX8
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	VSOC	VSOC	TFBGA	TFBGA	TFBGA	VSOC	VSOC	TFBGA
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, VERY THIN PROFILE	SMALL OUTLINE, VERY THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, VERY THIN PROFILE	SMALL OUTLINE, VERY THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	260	260	240	240	240	240	240	240
编程电压	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1 mm	1 mm	1.2 mm	1.2 mm	1.2 mm	1 mm	1 mm	1.2 mm
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
标称供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子形式	C BEND	C BEND	BALL	BALL	BALL	C BEND	C BEND	BALL
端子节距	0.4 mm	0.4 mm	0.8 mm	0.8 mm	0.8 mm	0.4 mm	0.4 mm	0.8 mm
端子位置	DUAL	DUAL	BOTTOM	BOTTOM	BOTTOM	DUAL	DUAL	BOTTOM
处于峰值回流温度下的最长时间	40	40	30	30	30	30	30	30
类型	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE
宽度	9.5 mm	9.5 mm	6 mm	6 mm	6 mm	9.5 mm	9.5 mm	6 mm
是否Rohs认证	符合	符合	-	-	不符合	不符合	不符合	不符合
厂商名称	SPANSION	SPANSION	-	-	-	SPANSION	SPANSION	SPANSION

MBM29LV160TE12PCV-E1

MBM29LV160TE12PCV-E1概述

MBM29LV160TE12PCV-E1规格参数

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