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Freescale Semiconductor
Technical Data
Document Number: MRF6VP3450H
Rev. 4, 4/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 470 to 860 MHz. The high gain and broadband performance
of these devices make them ideal for large--signal, common--source amplifier
applications in 50 volt analog or digital television transmitter equipment.
•
Typical DVB--T OFDM Performance: V
DD
= 50 Volts, I
DQ
= 1400 mA,
P
out
= 90 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM
Power Gain — 22.5 dB
Drain Efficiency — 28%
ACPR @ 4 MHz Offset — --62 dBc @ 4 kHz Bandwidth
•
Typical Broadband Two--Tone Performance: V
DD
= 50 Volts, I
DQ
= 1400 mA,
P
out
= 450 Watts PEP, f = 470--860 MHz
Power Gain — 22 dB
Drain Efficiency — 44%
IM3 — --29 dBc
•
Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz:
450 Watts CW
90 Watts Avg. (DVB--T OFDM Signal, 10 dB PAR, 7.61 MHz Channel
Bandwidth)
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
Internally Input Matched for Ease of Use
•
Qualified Up to a Maximum of 50 V
DD
Operation
•
Integrated ESD Protection
•
Designed for Push--Pull Operation
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
RoHS Compliant
•
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
MRF6VP3450HR6
MRF6VP3450HR5
MRF6VP3450HSR6
MRF6VP3450HSR5
860 MHz, 450 W, 50 V
LATERAL N-
-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 375D-
-05, STYLE 1
NI-
-1230
MRF6VP3450HR6(HR5)
CASE 375E-
-04, STYLE 1
NI-
-1230S
MRF6VP3450HSR6(HSR5)
PARTS ARE PUSH-
-PULL
RF
inA
/V
GSA
3
1 RF
outA
/V
DSA
RF
inB
/V
GSB
4
2 RF
outB
/V
DSB
(Top View)
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Figure 1. Pin Connections
Value
--0.5, +110
--6.0, +10
-- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
©
Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
MRF6VP3450HR6
MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
1
RF Device Data
Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 90 W CW
Case Temperature 44°C, 450 W CW
Case Temperature 62°C, 450 W Pulsed, 50
μsec
Pulse Width, 2.5% Duty Cycle
Symbol
R
θJC
Z
θJC
Value
(1,2)
0.27
0.25
0.04
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1B (Minimum)
B (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(3)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain--Source Breakdown Voltage
(I
D
= 50 mA, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(3)
(V
DS
= 10 Vdc, I
D
= 320
μAdc)
Gate Quiescent Voltage
(4)
(V
DD
= 50 Vdc, I
D
= 1400 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(3)
(V
GS
= 10 Vdc, I
D
= 1.58 Adc)
Dynamic Characteristics
(3,5)
Reverse Transfer Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
0.92
54.5
373
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
2
—
1.6
2.6
0.25
2.5
3.5
—
Vdc
Vdc
Vdc
I
GSS
V
(BR)DSS
I
DSS
I
DSS
—
110
—
—
—
—
—
—
10
—
10
10
μAdc
Vdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(4)
(In Freescale Broadband Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 1400 mA, P
out
= 90 W Avg., f = 860 MHz,
DVB--T OFDM Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @
±4
MHz Offset @ 4 kHz Bandwidth.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
ACPR
IRL
21.5
26
—
—
22.5
28
--62
--4
24.5
—
--59
--2
dB
%
dBc
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Each side of device measured separately.
4. Measurement made with device in push--pull configuration.
5. Part internally input matched.
(continued)
MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Pulsed Performances
(In Freescale Broadband Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 1200 mA, P
out
= 520 W,
f = 470--860 MHz, 50
μsec
Pulse Width, 2.5% Duty Cycle
Power Gain
Drain Efficiency
Input Return Loss
P
out
@ 1 dB Compression Point, Pulsed CW
(f = 470--860 MHz)
G
ps
η
D
IRL
P1dB
—
—
—
—
20.5
50
--3
520
—
—
—
—
dB
%
dB
W
Typical Two-
-Tone Performances
(In Freescale Broadband Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 1400 mA, P
out
= 450 W PEP,
f = 470--860 MHz, 100 kHz Tone Spacing
Power Gain
Drain Efficiency
Intermodulation Distortion
Input Return Loss
G
ps
η
D
IM3
IRL
—
—
—
—
22
44
--29
--2
—
—
—
—
dB
%
dBc
dB
MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
RF Device Data
Freescale Semiconductor
3
B1
V
BIAS
+
C24
R1
C34
C44
C36
C38
Z19
R3
Z4
Z2
RF
INPUT Z1
Printed
Balun
Input
Z6
C1
C3
Z3
Z7
Z5
B2
V
BIAS
C2
Z9
Z11
Z13
C4
Z15
Z8
Z10
Z12
Z14
Z18
Z16
Printed Balun Input
TOP
BOTTOM
Z17
Z20
R4
Z21
Z1
+
C25
R2
C35
C45
C37
C39
Z25
+
C22
Z24
C40
C28
C26
V
SUPPLY
Z3 Z2
Z5 Z7 Z6 Z4
Printed Balun Output
TOP
BOTTOM
Z22
Z28
Z30
C13
Z32
Z40
Z34
Z36
C8
C7
Z38
Z42
Z41 Z39 Z38Z40
Z43 Z42
Z44
DUT
C5
C6
C11 C12
Printed
Balun
Output
Z44
RF
OUTPUT
Z23
Z29
Z31
Z33
C14
Z35
Z37
C9
C10
Z39
Z43
Z26
Z27
Z41
+
C23
C41
C29
C27
V
SUPPLY
Z1
Z2, Z3
Z4, Z5
Z6, Z7
Z8, Z9
Z10, Z11
Z12, Z13
Z14, Z15
0.343″ x 0.065″ Microstrip
0.039″ x 0.200″ Microstrip
1.400″ x 0.059″ Microstrip
0.059″ x 0.118″ Microstrip
0.059″ x 0.118″ Microstrip
0.150″ x 0.394″ Microstrip
0.359″ x 0.394″ Microstrip
0.308″ x 0.394″ Microstrip
Z16, Z17
Z18, Z20
Z19, Z21
Z22, Z23
Z24, Z26
Z25, Z27
Z28, Z29
Z30, Z31
0.172″ x 0.465″ Microstrip
0.397″ x 0.059″ Microstrip
0.800″ x 0.059″ Microstrip
0.276″ x 0.465″ Microstrip
0.070″ x 0.157″ Microstrip
1.000″ x 0.157″ Microstrip
0.103″ x 0.392″ Microstrip
0.084″ x 0.392″ Microstrip
Z32, Z33
Z34, Z35
Z36, Z37
Z38, Z39
Z40, Z41
Z42, Z43
Z44
PCB
0.108″ x 0.392″ Microstrip
0.212″ x 0.388″ Microstrip
0.103″ x 0.388″ Microstrip
0.075″ x 0.157″ Microstrip
1.412″ x 0.071″ Microstrip
0.024″ x 0.087″ Microstrip
0.550″ x 0.065″ Microstrip
Taconic RF35, 0.031”,
ε
r
= 3.5
Figure 2. MRF6VP3450HR6(HSR6) Test Circuit Schematic
MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
4
RF Device Data
Freescale Semiconductor
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