电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SKM150GAR122D

产品描述Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel
产品类别分立半导体    晶体管   
文件大小321KB,共8页
制造商SEMIKRON
官网地址http://www.semikron.com
下载文档 详细参数 选型对比 全文预览

SKM150GAR122D概述

Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel

SKM150GAR122D规格参数

参数名称属性值
厂商名称SEMIKRON
包装说明FLANGE MOUNT, R-PUFM-X7
Reach Compliance Codeunknown
外壳连接ISOLATED
最大集电极电流 (IC)150 A
集电极-发射极最大电压1200 V
配置SINGLE WITH BUILT-IN DIODE
门极发射器阈值电压最大值6.5 V
门极-发射极最大电压20 V
JESD-30 代码R-PUFM-X7
元件数量1
端子数量7
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
极性/信道类型N-CHANNEL
功耗环境最大值1000 W
最大功率耗散 (Abs)625 W
认证状态Not Qualified
表面贴装NO
端子形式UNSPECIFIED
端子位置UPPER
晶体管应用MOTOR CONTROL
晶体管元件材料SILICON
标称断开时间 (toff)700 ns
标称接通时间 (ton)150 ns
VCEsat-Max4 V

SKM150GAR122D相似产品对比

SKM150GAR122D SKM150GB121D SKM150GB102D SKM150GB122D SKM150GAL102D SKM150GB101D SKM150GAL122D SKM150GAL101D SKM150GAR121D
描述 Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 150A I(C), 1000V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 150A I(C), 1000V V(BR)CES, N-Channel Insulated Gate Bipolar Transistor, 150A I(C), 1000V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel Insulated Gate Bipolar Transistor, 150A I(C), 1000V V(BR)CES, N-Channel Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel
包装说明 FLANGE MOUNT, R-PUFM-X7 FLANGE MOUNT, R-PUFM-X7 FLANGE MOUNT, R-PUFM-X7 FLANGE MOUNT, R-PUFM-X7 FLANGE MOUNT, R-PUFM-X7 FLANGE MOUNT, R-PUFM-X7 FLANGE MOUNT, R-PUFM-X7 FLANGE MOUNT, R-PUFM-X7 FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
最大集电极电流 (IC) 150 A 150 A 150 A 150 A 150 A 150 A 150 A 150 A 150 A
集电极-发射极最大电压 1200 V 1200 V 1000 V 1200 V 1000 V 1000 V 1200 V 1000 V 1200 V
配置 SINGLE WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
门极发射器阈值电压最大值 6.5 V 6.5 V 6.5 V 6.5 V 6.5 V 6.5 V 6.5 V 6.5 V 6.5 V
门极-发射极最大电压 20 V 20 V 20 V 20 V 20 V 20 V 20 V 20 V 20 V
JESD-30 代码 R-PUFM-X7 R-PUFM-X7 R-PUFM-X7 R-PUFM-X7 R-PUFM-X7 R-PUFM-X7 R-PUFM-X7 R-PUFM-X7 R-PUFM-X7
元件数量 1 2 2 2 1 2 1 1 1
端子数量 7 7 7 7 7 7 7 7 7
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
功耗环境最大值 1000 W 2000 W 2000 W 2000 W 1000 W 2000 W 1000 W 1000 W 1000 W
最大功率耗散 (Abs) 625 W 625 W 1000 W 625 W 1000 W 1000 W 625 W 1000 W 625 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO NO NO NO NO
端子形式 UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
端子位置 UPPER UPPER UPPER UPPER UPPER UPPER UPPER UPPER UPPER
晶体管应用 MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
标称断开时间 (toff) 700 ns 700 ns 700 ns 700 ns 700 ns 700 ns 700 ns 700 ns 700 ns
标称接通时间 (ton) 150 ns 150 ns 150 ns 150 ns 150 ns 150 ns 150 ns 150 ns 150 ns
VCEsat-Max 4 V 4 V 4 V 4 V 4 V 4 V 4 V 4 V 4 V
厂商名称 SEMIKRON - - SEMIKRON SEMIKRON SEMIKRON SEMIKRON SEMIKRON SEMIKRON
没有仿真器的情况下如何开发avr
在开发单片机程序时,有许多人依赖于仿真机,一旦离开了仿真机开发程序时就感觉无从下手。其实对FLASH存贮器单片机,不要仿真机也能方便快速地开发程序。具体可以从以下几方面入手: 一、尽量 ......
咖啡不加糖 Microchip MCU
中国汽车电子企业的发展机会
中国汽车电子企业的发展机会日经技术在线!报道:   现在人们驾驶汽车时,会发现车上增加了很多诸如:油耗显示、ABS、ASR、EBA、ESP、安全气囊、侧气帘、车内温湿度控制、CD/DVD播放 机、G ......
KG5 汽车电子
签到
为什么现在登录没有签到了. ...
well_kim 聊聊、笑笑、闹闹
为什么最基本的类都没有被vs识别?
是这样的: 我下载了一个程序包,里面‘头文件’分支里有除了visual studio自动加载的头文件外还有另外自己起名的,加进去的(比如叫myself.h)。 于是我另外自己新建了一个工程,也在‘头 ......
xss 嵌入式系统
求教初始化函数作用
void __init vfs_caches_init(unsigned long mempages){unsigned long reserve;/* Base hash sizes on available memory, with a reserve equal to150% of current kernel size */reserve = min ......
青城山下 Linux开发
单片机交流群 75997529
单片机交流群 75997529 欢迎大家的加入!!!...
rainmanyy 聊聊、笑笑、闹闹

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2875  2263  818  487  936  1  44  51  37  31 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved