TK12J60U
TOSHIBA Field Effect Transistor
Silicon N Channel MOS Type (DTMOS
II)
TK12J60U
Switching Regulator Applications
15.9 MAX.
Unit: mm
Ф3.2
±
0.2
1.0
4.5
9.0
2.0
3.3 MAX.
2.0
±
0.3
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
600
±30
12
24
144
69
8
14
150
−55
to 150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
1.0
＋0.3
－0.25
5.45
±
0.2
1.8 MAX.
＋0.3
0.6
－0.1
5.45
±
0.2
4.8 MAX.
2.8
1
2
3
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
1. Gate
2. Drain(heat sink)
3. Source
JEDEC
JEITA
TOSHIBA
⎯
SC-65
2-16C1B
Weight : 4.6 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
0.868
50
Unit
2
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 1.89 mH, R
G
= 25
Ω,
I
AR
= 8 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
20.5
±
0.5
Absolute Maximum Ratings
(Ta
=
25°C)
2.0
20.0
±
0.3
•
•
•
•
Low drain-source ON-resistance: R
DS (ON)
= 0.36
Ω
(typ.)
High forward transfer admittance:
⎪Y
fs
⎪
= 7.0 S (typ.)
Low leakage current: I
DSS
= 100
μA
(max) (V
DS
= 600 V)
Enhancement mode: V
th
= 3.0 to 5.0 V (V
DS
= 10 V, I
D
= 1 mA)
3
1
2011-04-26
TK12J60U
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
t
f
V
DD
≈
300 V
t
off
Q
g
Q
gs
Q
gd
V
DD
≈
400 V, V
GS
=
10 V, I
D
=
12 A
Duty
≤
1%, t
w
=
10
μs
⎯
⎯
⎯
⎯
75
14
8.5
5.5
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
10 V
I
D
=
6 A
V
OUT
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±30
V, V
DS
=
0 V
V
DS
=
600 V, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
0 V
V
DS
=
10 V, I
D
=
1 mA
V
GS
=
10 V, I
D
=
6 A
V
DS
=
10 V, I
D
=
6 A
Min
⎯
⎯
600
3.0
⎯
2.0
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
0.36
7.0
720
55
1700
30
60
8
Max
±1
100
⎯
5.0
0.4
⎯
⎯
⎯
pF
Unit
μA
μA
V
V
Ω
S
⎯
⎯
⎯
⎯
⎯
⎯
⎯
ns
V
GS
0V
50
Ω
R
L
=
50
Ω
⎯
⎯
⎯
⎯
⎯
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
⎯
⎯
I
DR
=
12 A, V
GS
=
0 V
I
DR
=
12 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/μs
Min
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
380
5.3
Max
12
24
−1.7
⎯
⎯
Unit
A
A
V
ns
μC
Marking
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
TOSHIBA
Part No.
(or abbreviation code)
Lot No.
Note 4
K12J60U
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
2
2011-04-26
TK12J60U
I
D
– V
DS
10
Common source
Tc
=
25°C
Pulse test
20
8
10
7.5
7
16
10
I
D
– V
DS
8
Common source
Tc
=
25°C
Pulse test
7.5
12
7
8
6.5
4
VGS
=
6 V
0
0
8
(A)
I
D
6
Drain current
4
6
2
VGS
=
5.5 V
0
0
1
2
3
4
Drain current
I
D
6.5
(A)
5
10
20
30
40
Drain−source voltage
V
DS
(V)
Drain−source voltage
V
DS
(V)
I
D
– V
GS
20
V
DS
– V
GS
10
16
V
DS
(V)
Common source
VDS
=
20 V
Pulse test
8
Common source
Tc
=
25°C
Pulse test
I
D
(A)
12
Drain−source voltage
6
ID
=
12A
4
Drain current
8
100
4
25
Ta
= −55°C
6
2
3
0
0
0
2
4
6
8
10
0
4
8
12
16
20
Gate−source voltage
V
GS
(V)
Gate−source voltage
V
GS
(V)
⎪Y
fs
⎪ −
I
D
100
Common source
VDS
=
10 V
Pulse test
10
Common source
Tc
=
25°C
Pulse test
R
DS (ON)
−
I
D
10
Tc
= −55°C
25
Drain−source ON-resistance
R
DS (ON)
(Ω)
Forward transfer admittance
⎪Y
fs
⎪
(S)
100
1
1
VGS
=
10 V
15
0.1
0.1
1
10
100
0.1
0.1
1
10
100
Drain current
I
D
(A)
Drain current
I
D
(A)
3
2011-04-26
TK12J60U
R
DS (ON)
– Tc
1.2
I
DR
−
V
DS
100
Drain−source ON-resistance
R
DS (ON)
(Ω)
1
0.8
I
DR
(A)
Common source
VGS
=
10 V
Pulse test
Common source
Tc
=
25°C
Pulse test
0.6
6
ID
=
3 A
Drain reverse current
12
10
10
1
5
3
1
VGS
=
0 V
0.4
0.2
0
−80
−40
0
40
80
120
160
0.1
0
−0.3
−0.6
−0.9
−1.2
Case temperature
Tc
(°C)
Drain−source voltage
V
DS
(V)
C – V
DS
10000
5
V
th
−
Tc
V
th
(V)
Gate threshold voltage
(pF)
4
1000
Ciss
Coss
3
Capacitance
C
100
2
10
1
0.1
Common source
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
1
10
Crss
100
Common source
1 V
DS
=
10 V
ID
=
1 mA
Pulse test
0
−80
−40
0
40
80
120
160
Drain−source voltage
V
DS
(V)
Case temperature
Tc
(°C)
P
D
−
Tc
200
500
Dynamic input/output
characteristics
V
DS
(V)
20
Common source
ID
=
12 A
Tc
=
25°C
Pulse test
16
200
300
VDD
=
100V
200
VGS
100
4
400
8
12
(W)
P
D
160
400
VDS
Drain power dissipation
Drain−source voltage
80
40
0
0
40
80
120
160
0
0
4
8
12
16
0
20
Case temperature
Tc
(°C)
Total gate charge
Q
g
(nC)
4
2011-04-26
Gate−source voltage
120
V
GS
(V)
TK12J60U
r
th
– t
w
Normalized transient thermal impedance
r
th (t)
/R
th (ch-c)
10
1
Duty=0.5
0.2
0.1
PDM
Single pulse
0.02
0.01
t
T
Duty
=
t/T
Rth (ch-c)
=
0.868°C/W
100μ
1m
10m
100m
1
10
0.1 0.05
0.01
10μ
Pulse width
t
w
(s)
Safe operating area
100
100
ID max (Pulse)
*
10
ID max (Continuous)
100
μs
*
1 ms
*
E
AS
– T
ch
E
AS
(mJ)
Avalanche energy
80
(A)
1
DC operation
Tc
=
25°C
Drain current
I
D
60
40
0.1
*
Single nonrepetitive
pulse Tc
=
25°C
Curves must be derated
linearly with increase in
temperature.
0.001
0.1
1
10
20
0.01
VDSS max
100
1000
0
25
50
75
100
125
150
Channel temperature (initial)
T
ch
(°C)
Drain−source voltage
V
DS
(V)
15 V
−15
V
B
VDSS
I
AR
V
DD
Test circuit
V
DS
Waveform
R
G
=
25
Ω
V
DD
=
90 V, L
=
1.89 mH
Ε
AS
=
⎛
⎞
1
B VDSS
⎟
⋅
L
⋅
I2
⋅ ⎜
⎜
B
⎟
2
⎝
VDSS
−
VDD
⎠
5
2011-04-26
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