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Datasheet> 器件分类 > 分立半导体> 二极管> SBL1640PT
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SBL1640PT

产品描述Rectifier Diode, Schottky, 1 Phase, 2 Element, 16A, 40V V(RRM), Silicon,
产品类别分立半导体    二极管   
文件大小61KB，共4页
制造商Vishay(威世)
官网地址http://www.vishay.com
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SBL1640PT概述

Rectifier Diode, Schottky, 1 Phase, 2 Element, 16A, 40V V(RRM), Silicon,

SBL1640PT规格参数

参数名称属性值
厂商名称Vishay(威世)
包装说明R-PSFM-T3
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性FREE WHEELING, UL RECOGNIZED
应用EFFICIENCY
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码R-PSFM-T3
最大非重复峰值正向电流250 A
元件数量2
相数1
端子数量3
最高工作温度150 °C
最低工作温度-65 °C
最大输出电流16 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
认证状态Not Qualified
最大重复峰值反向电压40 V
表面贴装NO
技术SCHOTTKY
端子形式THROUGH-HOLE
端子位置SINGLE

SBL1640PT文档预览

SBL1630PT–SBL1660PT
Vishay Lite–On Power Semiconductor
16A Schottky Barrier Rectifier
Features
D
Schottky barrier chip
D
Guard ring die constuction for transient
protection
D
Low power loss, high efficiency
D
High current capability and low forward voltage
drop
D
High surge capability
D
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection
application
14 414
D
Plastic material – UL Recognition flammability
classification 94V–0
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Repetitive peak reverse voltage
g
=Working peak reverse voltage
DC Blocking lt
=DC Bl ki voltage
Test
Conditions
Type
SBL1630PT
SBL1635PT
SBL1640PT
SBL1645PT
SBL1650PT
SBL1660PT
T
C
=95
°
C
Symbol
V
RRM
=V
RWM
V
=V
R
Value
30
35
40
45
50
60
250
16
–65...+150
Unit
V
V
V
V
V
V
A
A
°
C
Peak forward surge current
Average forward current
Junction and storage temperature range
I
FSM
I
FAV
T
j
=T
stg
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
g
Reverse current
Test
Conditions
I
F
=8A, T
C
=25
°
C
Type
SBL1630PT–SBL1645PT
SBL1650PT–SBL1660PT
Symbol
V
F
V
F
I
R
I
R
C
D
R
thJC
Min
Typ
Max
0.55
0.70
0.5
50
700
3.5
Unit
V
V
mA
mA
pF
K/W
T
C
=25
°
C
T
C
=100
°
C
Diode capacitance V
R
=4V, f=1MHz
Thermal resistance T
L
=const.
junction to case
Rev. A2, 24-Jun-98
1 (4)
SBL1630PT–SBL1660PT
Vishay Lite–On Power Semiconductor
Characteristics
(T
j
= 25
_
C unless otherwise specified)
I
FAV
– Average Forward Current ( A )
20
C
D
– Diode Capacitance ( pF )
16
12
4000
T
j
= 25°C
1000
8
4
0
0
50
100
150
100
0.1
15361
1.0
10
100
15346
T
amb
– Ambient Temperature (
°C
)
V
R
– Reverse Voltage ( V )
Figure 1. Max. Average Forward Current vs.
Ambient Temperature
100
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
100
I
R
– Reverse Current ( mA )
SBL1630PT – SBL1645PT
I
F
– Forward Current ( A )
10
T
j
= 100°C
10
T
j
= 75°C
1.0
SBL1650PT – SBL1660PT
1.0
T
j
= 25°C
I
F
Pulse Width = 300
µs
2% Duty Cycle
0.1
T
j
= 25°C
0.1
0.2
15359
0.6
0.8
0.4
V
F
– Forward Voltage ( V )
0.01
0
15362
40
80
120
Percent of Rated Peak Reverse Voltage (%)
Figure 2. Typ. Forward Current vs. Forward Voltage
300
250
200
150
100
50
0
Figure 5. Typ. Reverse Current vs. Percent of
Rated Peak Reverse Voltage
I
FSM
– Peak Forward Surge Current ( A )
8.3 ms Single Half–Sine–Wave
JEDEC method
1
10
Number of Cycles at 60 Hz
100
15360
Figure 3. Max. Peak Forward Surge Current vs.
Number of Cycles
2 (4)
Rev. A2, 24-Jun-98
SBL1630PT–SBL1660PT
Vishay Lite–On Power Semiconductor
Dimensions in mm
14470
Case: molded plastic
Polarity: as marked on body
Approx. weight: 5.6 grams
Mounting position: any
Marking: type number
Rev. A2, 24-Jun-98
3 (4)
SBL1630PT–SBL1660PT
Vishay Lite–On Power Semiconductor
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
4 (4)
Rev. A2, 24-Jun-98
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SBL1640PT相似产品对比

SBL1640PT SBL1660PT SBL1650PT SBL1645PT SBL1635PT SBL1630PT
描述 Rectifier Diode, Schottky, 1 Phase, 2 Element, 16A, 40V V(RRM), Silicon, Rectifier Diode, Schottky, 1 Phase, 2 Element, 16A, 60V V(RRM), Silicon, Rectifier Diode, Schottky, 1 Phase, 2 Element, 16A, 50V V(RRM), Silicon, Rectifier Diode, Schottky, 1 Phase, 2 Element, 16A, 45V V(RRM), Silicon, Rectifier Diode, Schottky, 1 Phase, 2 Element, 16A, 35V V(RRM), Silicon, Rectifier Diode, Schottky, 1 Phase, 2 Element, 16A, 30V V(RRM), Silicon,
厂商名称 Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世)
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 FREE WHEELING, UL RECOGNIZED FREE WHEELING, UL RECOGNIZED FREE WHEELING, UL RECOGNIZED FREE WHEELING, UL RECOGNIZED FREE WHEELING, UL RECOGNIZED FREE WHEELING, UL RECOGNIZED
应用 EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
配置 COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
最大非重复峰值正向电流 250 A 250 A 250 A 250 A 250 A 250 A
元件数量 2 2 2 2 2 2
相数 1 1 1 1 1 1
端子数量 3 3 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
最大输出电流 16 A 16 A 16 A 16 A 16 A 16 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 40 V 60 V 50 V 45 V 35 V 30 V
表面贴装 NO NO NO NO NO NO
技术 SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE

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