Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3
| 参数名称 | 属性值 |
| 厂商名称 | International Rectifier （ Infineon ） |
| 零件包装代码 | D2PAK |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | 3 |
| Reach Compliance Code | unknown |
| 外壳连接 | COLLECTOR |
| 最大集电极电流 (IC) | 31 A |
| 集电极-发射极最大电压 | 600 V |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| JESD-30 代码 | R-PSSO-G2 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| 晶体管应用 | POWER CONTROL |
| 晶体管元件材料 | SILICON |
| 标称断开时间 (toff) | 620 ns |
| 标称接通时间 (ton) | 69 ns |
| IRG4BC30FD-STRL | IRG4BC30FD-S | IRG4BC30FD-STRLPBF | IRG4BC30FD-STRRPBF | |
|---|---|---|---|---|
| 描述 | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 |
| 厂商名称 | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） |
| 零件包装代码 | D2PAK | D2PAK | D2PAK | D2PAK |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | compli | compliant | compliant |
| 外壳连接 | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
| 最大集电极电流 (IC) | 31 A | 31 A | 31 A | 31 A |
| 集电极-发射极最大电压 | 600 V | 600 V | 600 V | 600 V |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| JESD-30 代码 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | 2 | 2 | 2 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | POWER CONTROL | POWER CONTROL | POWER CONTROL | POWER CONTROL |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| 标称断开时间 (toff) | 620 ns | 620 ns | 620 ns | 620 ns |
| 标称接通时间 (ton) | 69 ns | 69 ns | 69 ns | 69 ns |
| 是否Rohs认证 | - | 不符合 | 符合 | 符合 |
| 门极发射器阈值电压最大值 | - | 6 V | 6 V | 6 V |
| 门极-发射极最大电压 | - | 20 V | 20 V | 20 V |
| JESD-609代码 | - | e0 | e3 | e3 |
| 湿度敏感等级 | - | 1 | 1 | 1 |
| 最高工作温度 | - | 150 °C | 150 °C | 150 °C |
| 峰值回流温度（摄氏度） | - | 225 | 260 | 260 |
| 最大功率耗散 (Abs) | - | 100 W | 100 W | 100 W |
| 端子面层 | - | Tin/Lead (Sn/Pb) | MATTE TIN OVER NICKEL | MATTE TIN OVER NICKEL |
| 处于峰值回流温度下的最长时间 | - | 30 | 30 | 30 |
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