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FMMT42CSM-JQRG4

产品描述500mA, 300V, NPN, Si, SMALL SIGNAL TRANSISTOR, HERMETIC SEALED, CERAMIC, LCC1-3
产品类别分立半导体    晶体管   
文件大小16KB,共2页
制造商SEMELAB
标准  
下载文档 详细参数 全文预览

FMMT42CSM-JQRG4概述

500mA, 300V, NPN, Si, SMALL SIGNAL TRANSISTOR, HERMETIC SEALED, CERAMIC, LCC1-3

FMMT42CSM-JQRG4规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称SEMELAB
零件包装代码DLCC
包装说明SMALL OUTLINE, R-CDSO-N3
针数3
Reach Compliance Codecompliant
ECCN代码EAR99
最大集电极电流 (IC)0.5 A
集电极-发射极最大电压300 V
配置SINGLE
最小直流电流增益 (hFE)40
JESD-30 代码R-CDSO-N3
JESD-609代码e4
元件数量1
端子数量3
最高工作温度175 °C
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型NPN
认证状态Not Qualified
表面贴装YES
端子面层GOLD
端子形式NO LEAD
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管元件材料SILICON
标称过渡频率 (fT)50 MHz

FMMT42CSM-JQRG4文档预览

FMMT42CSM
MECHANICAL DATA
Dimensions in mm (inches)
0.51 ± 0.10
(0.02 ± 0.004)
0.31 rad.
(0.012)
GENERAL PURPOSE
NPN TRANSISTOR
IN A HERMETICALLY SEALED
CERAMIC SURFACE MOUNT
PACKAGE
FEATURES
• GENERAL PURPOSE NPN TRANSISTOR
A
1.40
(0.055)
max.
2.54 ± 0.13
(0.10 ± 0.005)
3
2
1
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
A=
0.76 ± 0.15
(0.03 ± 0.006)
0.31 rad.
(0.012)
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE
• CECC SCREENING OPTIONS
1.02 ± 0.10
(0.04 ± 0.004)
SOT23 CERAMIC
(LCC1 PACKAGE)
Underside View
PAD 1 – Base
PAD 2 – Emitter
PAD 3 – Collector
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Power Dissipation @ T
amb
= 25°C
@ T
case
= 25°C
Operating and Storage Temperature
300V
300V
6V
500mA
429mW
1.8W
–55 to 175°C
THERMAL CHARACTERISTICS
Parameter
R
th(j-amb)
Thermal Resistance Junction to Ambient
Max.
350
Unit
°C/W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 3587
Issue 1
FMMT42CSM
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise stated)
Parameter
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector – Emitter Saturation Voltage
Emitter Saturation Voltage
Static Forward Current Transfer Ratio
Test Conditions
I
C
= 100µA
I
E
= 100µA
V
CB
= 200V
V
EB
= 6V
V
EB
= 4V
I
C
= 20mA
I
C
= 20mA
I
C
= 1mA
I
C
= 10mA
I
C
= 30mA
V
CE
= 20V
f = 20MHz
V
CB
= 20V
f = 1MHz
I
E
= 0
I
E
= 0
I
B
= 0*
I
C
= 0
I
E
= 0
I
C
= 0
I
C
= 0
I
B
= 2mA
I
B
= 2mA
V
CE
= 10V*
V
CE
= 10V*
V
CE
= 10V*
I
C
= 10mA
Min.
300
300
6
Typ.
Max. Unit
V
V
V
0.1
0.1
0.5
0.9
µA
µA
V
Collector - Emitter Breakdown Voltage I
C
= 1mA
25
40
40
50
6
MHz
pF
f
T
C
obo
Transition Frequency
Output Capacitance
* Pulse Test: Pulse Width = 200µs, Duty Cycle
2%.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 3587
Issue 1

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